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    NEC Electronics Group NE72218-T1

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    NE72218 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE72218 NEC Semiconductor Selection Guide Original PDF
    NE72218 NEC C to x BAND AMPLIFIER C to x BAND OSC N-CHANNEL GaAs MES FET Original PDF
    NE72218-AZ NEC MOSFET: C to x Band Amplifier: C to x Band OSC N-Channel GAAS MOS FET Original PDF
    NE72218-T1 NEC C to x BAND AMPLIFIER C to x BAND OSC N-CHANNEL GaAs MES FET Original PDF
    NE72218-T1-AZ NEC MOSFET: C to x Band Amplifier: C to x Band OSC N-Channel GAAS MOS FET: Tape And Reel Original PDF
    NE72218-T2 NEC C to x BAND AMPLIFIER C to x BAND OSC N-CHANNEL GaAs MES FET Original PDF

    NE72218 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q1104

    Abstract: NE72218
    Text: NE72218 Rank 58 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LG 0.55nH 0.5nH LD_PKG DRAIN 0.76nH 0.1nH GATE CDS_PKG CGS_PKG 0.15pF LS 0.25nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1


    Original     		PDF NE72218 003pF 1e-14 4e-12 27e-12 1e-10 85e-12 055e-12 2e-10 24-Hour Q1104 NE72218

    C10535E

    Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
    Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package


    Original     		PDF NE72218 NE72218-T1 NE72218-T2 C10535E NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58

    Q110

    Abstract: 0-22nH
    Text: NONLINEAR MODEL NE72218 SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LD_PKG DRAIN 0.82nH 0.1nH LG GATE 0.55nH 0.48nH CDS_PKG CGS_PKG 0.12pF LS 0.22nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters


    Original     		PDF 003pF NE72218 1e-14 4e-12 27e-12 1e-10 85e-12 055e-12 2e-10 24-Hour Q110 0-22nH

    ne72218 v58

    Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3
    Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 µm recessed gate • Gate Width : Wg = 400 µm • 4-pin super minimold • Tape & reel packaging only available


    Original     		PDF NE72218 NE72218-T1 NE72218-T2 ne72218 v58 NE72218 NE72218-T1 NE72218-T2 VP15-00-3

    ne72218 v58

    Abstract: NE72218 NE72218-T1 4E12
    Text: NE72218 C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm


    Original     		PDF NE72218 OT-343) NE72218 27e-12 1e-10 85e-12 055e-12 24-Hour ne72218 v58 NE72218-T1 4E12

    Untitled

    Abstract: No abstract text available
    Text: NE72218 Rank 59 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LD_PKG DRAIN 0.82nH 0.1nH LG GATE 0.55nH 0.48nH CDS_PKG CGS_PKG 0.12pF LS 0.22nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters


    Original     		PDF NE72218 003pF 1e-14 4e-12 27e-12 1e-10 85e-12 055e-12 2e-10 24-Hour

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		PDF AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO

    ne72218 v58

    Abstract: NE72218-T1 NE72218-T2 C10535E NE72218 VP15-00-3
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    AV to rf converter

    Abstract: CD Pick-Up head RF remote control rgb led PD780205 PC3202 rgb lcd interface SCK VARISTOR PC2798GR UPD63702 car front camera
    Text: APPLICATION AV Audio Amplifier VCR Servo Controller Digital DBS #1 Mini Stereo Component Camcorder Digital DBS #2 Compact Disk Player (Low end Model) Digital Video Camcorder Transceiver Block for Digital Cable Modem/CATV Set-top-box Portable CD Player Digital Still Camera


    Original     		PDF 2SC4703 2SC5338 2SC4093 2SC3356 PB1506/1507 3SK224 3SK134B AV to rf converter CD Pick-Up head RF remote control rgb led PD780205 PC3202 rgb lcd interface SCK VARISTOR PC2798GR UPD63702 car front camera

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508

    X13769XJ2V0CD00

    Abstract: PC1891A R78K0 PC1099 2SC470-3 2SC4703 PTO01 NE3210 PWM lcd TV PD784036
    Text: AV アプリケーション オーディオ・アンプ VTR（サーボ制御） ディジタルDBS #1 ミニコンポ カメラ一体型VTR ディジタルDBS #2 コンパクト・ディスク・プレーヤ（普及機） ディジタル･ビデオ･カメラ


    Original     		PDF X13769XJ2V0CD00 PD78064Y, 780308Y PD780205 PD7500× PD78064, X13769XJ2V0CD00 PC1891A R78K0 PC1099 2SC470-3 2SC4703 PTO01 NE3210 PWM lcd TV PD784036

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    MARKING V58

    Abstract: No abstract text available
    Text: C TO X BAND N-CHANNEL GaAs MESFET FEATURES NE72218 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 PACKAGE OUTLINE 18 (recessed gate) - 2.1 ± 0 .2 - H .25 ± 0.1 H GATE WIDTH: W g = 400 jim 0-3^0.05 4 PIN SUPER MINI MOLD


    OCR Scan     		PDF NE72218 NE72218 24-Hour MARKING V58

    ne72218 v58

    Abstract: tom 1157
    Text: NEC C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz • NE72218 PACKAGE OUTLINE 18 - 2.1 0 .2 ± - O |to;o5


    OCR Scan     		PDF OT-343) NE72218 NE72218 1e-14 4e-12 27e-12 1e-10 85e-12 055e-12 2e-10 ne72218 v58 tom 1157

    NEC 2561

    Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
    Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym


    OCR Scan     		PDF NE72218 NE72218-T1 NE72218-T2 NEC 2561 nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049

    AM/SSC 9500 ic data

    Abstract: No abstract text available
    Text: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •


    OCR Scan     		PDF NE72218 NE72218-T1 NE72218-T2 VP15-00-3 WS60-00-1 P12750EJ2V0D AM/SSC 9500 ic data

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01