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    NDF08N50ZG

    Abstract: 221D A114 NDF08N50Z
    Text: NDF08N50Z, NDP08N50Z N-Channel Power MOSFET 500 V, 0.69 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted


    Original     		NDF08N50Z, NDP08N50Z NDF08N50Z 22-A114) NDF08N50Z/D NDF08N50ZG 221D A114 NDF08N50Z PDF