Untitled
Abstract: No abstract text available
Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)
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MG300Q1US51
2-109F1A
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mg300* toshiba
Abstract: MG300Q1US51
Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm 2–M4 2–M6 4– 6.6 0.3 Low saturation voltage : VCE sat = 3.6V (Max.) E G E C 24 0.3 20 0.3 29 0.3 Enhancement-mode
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MG300Q1US51
2-109F1A
mg300* toshiba
MG300Q1US51
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MG300Q1US51
Abstract: 80c400
Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode
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MG300Q1US51
2-109F1A
2500transportation
MG300Q1US51
80c400
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Untitled
Abstract: No abstract text available
Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode
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MG300Q1US51
2-109F1A
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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MG800J2YS50A)
MG300J1US51
MG400J1US51
MG50J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG300J2YS50
MG100J7KS50
GT30J322
MP6750
MG200Q2YS40
MG100Q2YS42
GT60M301
GT60N321
IGBT gt20d201
mg300j2ys50
MIG75Q7CSA0X
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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MG300Q1US51
Abstract: MG300Q1
Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)
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MG300Q1US51
MG300Q1
2-109F1A
MG300Q1US51
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 u S 51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage • V c e (sat) —3.6V (Max.)
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MG300Q1US51
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage
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MG300Q1US51
1256C
VCE25i
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mg30
Abstract: MG300Q1US51 P channel 600v 300a IGBT
Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)
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MG300Q1US51
MG300Q1
2-109F1A
mg30
MG300Q1US51
P channel 600v 300a IGBT
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G300Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG300Q1US51
G300Q
TjS125
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0.3/*s Max. @Induetive Load • Low Saturation Voltage . T
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MG300Q1US51
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MG200J2YS50
Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
Text: MHTEPTEKC www.i-t.su [email protected] Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)
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flnana30H
ot-40Â
MG200Q1US41
2-109A4A
MG300Q1US41
MG300Q1US51
2-109F1A
MG400Q1US41
MG200J2YS50
2-94D4A
MG75Q2YS50
MG300J2YS50
2-109C1A
MG400J2YS50
mg200q2ys50
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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