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    Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
    Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient


    Original     		7135A IRG7CH30K10B IRG7CH30K10B 150mm O-247 AN-1086 for IR IGBT die IRG7PH30K10 IRG7CH PDF