HYM532810BM
Abstract: HY5117400B HYM532810B HYM532810BMG
Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
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HYM532810B
8Mx32
8Mx32-bit
HY5117400B
HYM532810BM
HYM532810BMG
72-Pin
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Untitled
Abstract: No abstract text available
Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
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HYM532810C
8Mx32
8Mx32-bit
HY5117400C
HYM532810CM
HYM532810CMG
72-Pin
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HY5117400A
Abstract: No abstract text available
Text: HYM532810A M-Series 8Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM532810AM/ASLM/ATM/ASLTM are Tin-Lead plated and
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HYM532810A
8Mx32-bit
32-bit
HY5117400A
HYM532810AM/ASLM/ATM/ASLTM
HYM532810AMG/ALMG/ATMG/ALTMG
1CF13-10-DEC94
72pin
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HY5117400C
Abstract: HYM532810C HYM532810CM HYM532810CMG dec97
Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
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Original
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HYM532810C
8Mx32
8Mx32-bit
HY5117400C
HYM532810CM
HYM532810CMG
72-Pin
dec97
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HYM532810
Abstract: HY5117400 HYM53
Text: ••HYUNDAI HYM532810 M-Series 8M X 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532810 is a 8M x 32-bit Fast page mode C M O S DRAM module consisting of sixteen HY5117400 in 24/28 pin S O J on a 72 pin glass-epoxy printed circuit board. 0.22fi? decoupling capacitor is mounted for each DRAM,
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HYM532810
32-blt
32-bit
HY5117400
HYM532810M/LM
HYM532810MG/LMG
1CF02-10-JUN94
4b75D
0D03577
HYM53
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PD1-P04
Abstract: No abstract text available
Text: “ H Y U M P f t l • HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8M x32-bit Fast Page mode CMOS DRAM m odule consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1
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HYM532810C
8Mx32
x32-bit
HY5117400C
HYM532810CM
HYM532810CMG
72-Pln
72iMiN.
PQ062
PD1-P04
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I HYM 532814A M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ¡aF decoupling capacitors are
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32814A
32-bit
HYM5328104A
HY5117404A
HYM532814AM/ASLM/ATM/ASLTM
HYM5328104AMG/ASLMG/ATMG/ASLTMG
541MIN.
HYM532814A
1CF13-10-DEC94
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Untitled
Abstract: No abstract text available
Text: » « Y I I H D W I HYM532810A M-Series 8Mx32-blt CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SQJ or TSOPfl on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
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HYM532810A
8Mx32-blt
32-bit
HY5117400A
HYM532810AM/ASLM/ATM/ASLTM
HYM53281OAMG/ALMG/ATMG/ALTMG
72pin
HYM53281OA/AL
HYM532810AT/ALT
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HYM532814B
Abstract: No abstract text available
Text: “H Y U N D A I HYM532814B M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 j F and 0.01 (iF decoupling capacitors are
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM532814BM/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/BTMG/BSLTMG
HYM532814B
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HYM5328104B
Abstract: HYM532814B HYM532810 HYM532814
Text: •HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT D ESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM5328148M/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/B7MG/BSLTMG
100B6
002f3
G0GS47S
HYM532810
HYM532814
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI 532810A HYM 8M X M-Series 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit R et page mods CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted
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32810A
32-bit
HYM532810A
HY5117400A
HYM53281OAM/ALM/ATM/ALTM
HYM53281OAMG/ALMG/ATMG/ALTMG
HYM532810A/AL
HYM532810AT/ALT
50flfl
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simm 72 dram
Abstract: No abstract text available
Text: - H Y U N D A I H Y M 5 3 2 8 1 0 A 8M X M - S e r ie s 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22 iF decoupling capacitor is mounted
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32-bit
HYM532810A
HY5117400A
HYM53281OAM/ALM/ATM/ALTM
HYM53281OAMG/ALMG/ATMG/ALTMG
1CF13-10-DEC94
HYM532810A/AL
HYM532810AT/ALT
simm 72 dram
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM532814BM/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/BTMG/BSLTMG
100ffi
004i10*
HYM532814B
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532814A M -Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.IjjF and 0.01 nF decoupling capacitors are
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HYM532814A
32-bit
HYM5328104A
HY5117404A
HYM532814AM/ASLM/Ã
HYM5328104AMG/ASLMG/ATWG/ASLTMG
HYM532814A
HYMS32814A
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HYM536100AM
Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
HYM536A414AM
HYM536A414BM
HYM532814AM
HYM532814BM
HYM536100AM
HYM532814
4Mx4 dram simm
HYM532100AM
1MX32
HYM532120W
HYM532224
HYM536410
HYM536410AM
HYM532200AM
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532814A M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 5328104Ais a 8M x 32-bit EDO mode CMOS DRAM m odule consisting of sixteen HY5117404Ain 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jj.F and 0.01
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HYM532814A
32-bit
5328104Ais
HY5117404Ain
HYM532814AM/ASLM/ATM/ASLTM
HYM5328104AMG/ASLMG/ATMG/ASLTMG
1CF13-10-DEC94
HYM532814A
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