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    HN3C14F Search Results

    HN3C14F Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C14F Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C14F Toshiba RF 2-in-1 Hybrid Transistors Scan PDF
    HN3C14FT Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C14FT Toshiba Scan PDF
    HN3C14F(TE85L) Toshiba TRANS GP BJT NPN 10V 0.06A 6(2-3N1B) T/R Scan PDF
    HN3C14FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C14FU Toshiba Silicon NPN epitaxial planar type transistor for VHF-UHF band low noise amplifier applications Scan PDF
    HN3C14FU(TE85L) Toshiba TRANS GP BJT NPN 10V 0.06A 6(2-2J1A) T/R Scan PDF

    HN3C14F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    FET K161

    Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
    Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    2SK3075 equivalent

    Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
    Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz


    Original     		PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066

    Untitled

    Abstract: No abstract text available
    Text: HN3C14FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF HN3C14FU

    transistor HD marking

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14F transistor HD marking

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 A F 11 • ■ u 'm mm V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 U ltra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14FU transistor marking c3n

    HN3C14FU

    Abstract: No abstract text available
    Text: TO SH IBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 i 0.1 TnrlnHincp T w n T ìpviV ps in TTSÆ ÍTTlt.rn S n n p r M in i T vn p wit.Vi Æ Leads MAXIMUM RATINGS Ta = 25°C)


    OCR Scan     		PDF HN3C14FU HN3C14FU

    HN3C14F

    Abstract: No abstract text available
    Text: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING


    OCR Scan     		PDF HN3C14F HN3C14F

    2SC5111

    Abstract: HN3C14FT
    Text: T O S H IB A HN3C14FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C14FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


    OCR Scan     		PDF HN3C14FT 2SC5111 1000MHz 30MHz 2SC5111 HN3C14FT

    HN3C14FU

    Abstract: No abstract text available
    Text: T O S H IB A HN3C14FU TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F - U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14FU HN3C14FU

    2SC5111

    Abstract: HN3C14FT
    Text: TO SH IBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1


    OCR Scan     		PDF HN3C14FT 2SC5111 2SC5111 HN3C14FT

    HN3C14FU

    Abstract: No abstract text available
    Text: TOSHIBA HN3C14FU TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F - U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 • ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14FU HN3C14FU

    2tj transistor

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 IJ5ÎU.1


    OCR Scan     		PDF HN3C14FT 2SC5111 S21el2 1000M 2tj transistor

    HN3C14

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 2.8 -0 .3 Including Two Devices in SM6 Super Mini Type with 6 Leads t-0.2 - EE MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14F HN3C14

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 1.25 ± 0.1


    OCR Scan     		PDF HN3C14FT 2SC5111

    2SC5111

    Abstract: HN3C14FT
    Text: TO SH IBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1


    OCR Scan     		PDF HN3C14FT 2SC5111