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Micro Commercial Components SK3200AFL-TP Schottky Diodes & Rectifiers 3A 200Vr 140Vrms 200V 80A 0.86Vf
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SK3200AFL-TP		8,933			1 $0.36 10 $0.236 100 $0.118 1000 $0.09 10000 $0.073	Buy Now
Micro Commercial Components SK3200B-LTP Schottky Diodes & Rectifiers 200V,3A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SK3200B-LTP		6,991			1 $0.8 10 $0.582 100 $0.401 1000 $0.292 10000 $0.225	Buy Now
Micro Commercial Components SK320AQ-LTP Schottky Diodes & Rectifiers
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SK320AQ-LTP		4,820			1 $0.51 10 $0.346 100 $0.214 1000 $0.135 10000 $0.103	Buy Now
Micro Commercial Components SK3200-TP Schottky Diodes & Rectifiers 200V,3A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SK3200-TP		3,841			1 $0.67 10 $0.63 100 $0.425 1000 $0.3 10000 $0.225	Buy Now
Micro Commercial Components SK320Q-TP Schottky Diodes & Rectifiers
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SK320Q-TP		3,000			1 $0.61 10 $0.476 100 $0.321 1000 $0.214 10000 $0.154	Buy Now

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3SK320 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
3SK320		Toshiba	Field Effect Transistor GaAs N-Channel Dual Gate MES Type		Scan	PDF
3SK320		Toshiba	GaAs N-channel dual gate MES type field effect transistor for UHF band low noise amp, UHF band mix		Scan	PDF
3SK320		Toshiba	FET, UHF Band Low Noise Amplifier, UHF Band Mix		Scan	PDF
3SK320TE85L		Toshiba	FET, UHF Band Low Noise Amplifier, UHF Band Mix, Tape And Reel		Scan	PDF

3SK320 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
3SK320 Abstract: "GaAs N-channel Dual Gate" 3SK3 Text: 3SK320 Preliminary TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK320 UHF Band Low Noise Amp UHF Band Mix Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1DO −6 V Gate 2-drain voltage	Original	PDF	3SK320 3SK320 "GaAs N-channel Dual Gate" 3SK3
3SK320 Abstract: 1202 toshiba transistor Text: 3SK320 Preliminary TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK320 UHF Band Low Noise Amp UHF Band Mix Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1DO -6 V Gate 2-drain voltage VG2DO	Original	PDF	3SK320 3SK320 1202 toshiba transistor
smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	PDF	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
TOSHIBA RF Power Module S-AV24 Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 Text: 高周波用半導体デバイスダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
FET K161 Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 Text: 高周波用半導体デバイストランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
2sc5088 horizontal transistors Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	PDF	3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
2SK3075 equivalent Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz	Original	PDF	2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
3SK320 Abstract: L 0946 Text: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND LOW NOISE AMP GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 UHF BAND MIX MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT Gate 1-Drain Voltage Gate 2-Drain Voltage VG1DO V V Gate 1-Source Voltage	OCR Scan	PDF	3SK320 961001EAC1 3SK320 L 0946
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 Unit in mm UHF BAND LOW NOISE AM P UHF BAND MIX 2.1 ± 0.1 1.25 ± 0.1 = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage	OCR Scan	PDF	3SK320
Untitled Abstract: No abstract text available Text: T O SH IB A TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND LOW NOISE AMP GaAs N-CHANNEL DUAL GATE MES TYPE 3 S K3 2 0 UHF BAND MIX MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT Gate 1-Drain Voltage Gate 2-Drain Voltage v g id o Gate 1-Source Voltage	OCR Scan	PDF	3SK320
1202 toshiba transistor Abstract: 3SK320 Text: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 UHF BAND LOW NOISE AM P U n it in mm UHF BAND MIX 2.1 ± 0.1 1.25 ± 0.1 CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage	OCR Scan	PDF	3SK320 000707EAC1 1202 toshiba transistor 3SK320