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    GQM2195C2E150FB12 Price and Stock

    Murata Manufacturing Co Ltd GQM2195C2E150FB12D

    CAP CER 15PF 250V NP0 0805
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    DigiKey GQM2195C2E150FB12D Cut Tape 34 1
    • 1 $1.19
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    GQM2195C2E150FB12D Digi-Reel 34 1
    • 1 $1.19
    • 10 $0.743
    • 100 $0.5044
    • 1000 $0.37781
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    GQM2195C2E150FB12D Reel 4,000
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    Avnet Americas GQM2195C2E150FB12D Reel 10 Weeks 4,000
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    Mouser Electronics GQM2195C2E150FB12D 3,178
    • 1 $0.94
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    • 100 $0.491
    • 1000 $0.346
    • 10000 $0.29
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    TTI GQM2195C2E150FB12D Reel 4,000
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    TME GQM2195C2E150FB12D 4,000
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    Avnet Abacus GQM2195C2E150FB12D Reel 11 Weeks 4,000
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    Chip1Stop GQM2195C2E150FB12D Cut Tape 59
    • 1 $0.611
    • 10 $0.447
    • 100 $0.426
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    Murata Manufacturing Co Ltd GQM2195C2E150FB12J

    CAP CER 15PF 250V NP0 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GQM2195C2E150FB12J Reel 10,000
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    • 10000 $0.30175
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    Avnet Americas GQM2195C2E150FB12J Reel 10 Weeks 10,000
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    • 10000 $0.2927
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    Mouser Electronics GQM2195C2E150FB12J
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    • 10000 $0.301
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    GQM2195C2E150FB12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GQM2195C2E150FB12D muRata Ceramic Capacitors, Capacitors, CAP CER 15PF 250V 1% NP0 0805 Original PDF
    GQM2195C2E150FB12J muRata Ceramic Capacitors, Capacitors, CAP CER 15PF 250V 1% NP0 0805 Original PDF

    GQM2195C2E150FB12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF HIGH FREQUENCY CHIP MONOLITHIC CERAMIC CAPACITOR GQM2195C2E150FB12_ 0805, C0G, 15pF, 250Vdc _: packaging code Reference Sheet 1.Scope This product specification is applied to RF High Frequency Chip Monolithic Ceramic Capacitor used for RF High frequency


    Original
    PDF GQM2195C2E150FB12_ 250Vdc) JEMCNC-0012L

    A5M06

    Abstract: Transistor Z17
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original
    PDF AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17

    AFT504

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original
    PDF AFT05MS004N AFT05MS004NT1 AFT504

    A5M0

    Abstract: IC 2 5/A5M06
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original
    PDF AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06