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Fuji Electric Co Ltd FLL351ME
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLL351ME		1			1 $66.3 10 $66.3 100 $66.3 1000 $66.3 10000 $66.3	Buy Now

FLL351 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLL351ME		Fujitsu	L-band medium & high power gaas FTEs		Scan	PDF
FLL351ME		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
FLL351ME		Unknown	FET Data Book		Scan	PDF

FLL351 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF
FLL55 Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.	OCR Scan	FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171	PDF
1N22b Abstract: 1N22B2 1n22b3 1N2448 1N376B 1N2447 1N2457 Text: SE HI CON C O M P O N E N T S INC EflE D • fll35157 CI000A37 E STUD BASE RECTIFIERS DO-5 CASE lQ RATINGS TO 60.0 AMPS 'v s< ; type m m ¿m m yovm - V m ITEM m AMPERES v v -" '■ AMPS n x m 7 : AMPS 1N2136 1N2136A 1N2137 1N2137A 1N2138 450 450 500 500	OCR Scan	A13S1S7 0D0fl37 1n2136 1n2136a 1n2137 1n2137a 1n2138 1n2138a 1n2154 1n2155 1N22b 1N22B2 1n22b3 1N2448 1N376B 1N2447 1N2457	PDF
fll351 Abstract: fujitsu gaas fet L-band FLL351ME Text: FLL351ME F IIÏÏtÇ II J L-Band Medium & High Power GaAs F ET s FEATURES • • • • • High Output Power: P-\|c\|g=35.5dBm Typ. High Gain: G-\|^13=11 -5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL351 ME is a Power GaAs FET that is specifically designed to	OCR Scan	FLL351ME FLL351 fujitsu gaas fet L-band FLL351ME	PDF
FLL351ME Abstract: fll351 fujitsu databook l-band power fets microwave databook Text: FLL351ME P I L-Band Medium & High Power GaAs FETs i î ? j r ï i FEATURES • • • • • High Output Power: P1c\|B=35.5dBnn Typ.) High Gain: G-\|C\|b =11 -5clB (Typ) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION	OCR Scan	FLL351ME FLL351ME fll351 fujitsu databook l-band power fets microwave databook	PDF
15KW Abstract: S704-15K36 SPIP120 SPIP208 SPIP24 SPIP250 SPIP30 SPIP440 SPIP500 SPIP60 Text: SEMICON COMPONENTS INC 5fiE D • fll351S7 Q0D0fll3 T ■ DESCRIPTION SPIP CASE This series is designed for industrial applications such as across the line AC protection, in supervisory control systems, CATV, telecommunications, and computers. These Silicon PN Junction devices have been designed to absorb high voltage transients	OCR Scan	SPIP250* SPIP440 SPIP500* S704-15K36, 15K36T 100nS 100ys 15KW S704-15K36 SPIP120 SPIP208 SPIP24 SPIP250 SPIP30 SPIP500 SPIP60	PDF
FLL105 Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202 Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ	OCR Scan	FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202	PDF
FLL101ME Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C Text: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV Ä±iS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=250 t st (V) ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)	OCR Scan	FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C	PDF
sues2606 Abstract: SUES805 SUES706 SUES802 70t03 SUES806 SUES2605 70to3 SUES704 1N5812 Text: SEN I CO N C O M P O N E N T S INC 5 1 3 5 1 5 7 ODOGfiM t =1 • 2flE D ' T - o 3 ' >i RECOVERYRECTIFIERS -/r I lf IGSEALEtí AMDitell^K Y FEATURES: • 15 Amp to 70 Amp • 50V to 800 V • 35 ns to 70 ns • High Temperature Operation • Metallurgical^ Bonded	OCR Scan	SUES701 SUES702 sues2606 SUES805 SUES706 SUES802 70t03 SUES806 SUES2605 70to3 SUES704 1N5812	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan		PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan		PDF
FLL351ME Abstract: No abstract text available Text: FL U 5 IME L-Bcind Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V Total Power Dissipation Ptot 15 mW Storage Temperature Tstg	OCR Scan		PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK	PDF