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    CY62128DV30 Search Results

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    CY62128DV30 Price and Stock

    Rochester Electronics LLC CY62128DV30L-70SI

    IC SRAM 1MBIT PARALLEL 32SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62128DV30L-70SI Bulk 148
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    Rochester Electronics LLC CY62128DV30L-55ZI

    IC SRAM 1MBIT PARALLEL 32TSOP I
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62128DV30L-55ZI Bulk 141
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    Rochester Electronics LLC CY62128DV30L-55ZAI

    IC SRAM 1MBIT PARALLEL 32TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62128DV30L-55ZAI Bulk 237
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    Infineon Technologies AG CY62128DV30LL-55SXI

    IC SRAM 1MBIT PARALLEL 32SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62128DV30LL-55SXI Tube 975
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    Rochester Electronics LLC CY62128DV30LL-55SXI

    IC SRAM 1MBIT PARALLEL 32SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62128DV30LL-55SXI Tube 141
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    CY62128DV30 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62128DV30 Cypress Semiconductor 1 Mb (128K x 8) Static RAM Original PDF
    CY62128DV30L-55SI Cypress Semiconductor 128K x 8 static RAM, 55ns Original PDF
    CY62128DV30L-55ZAI Cypress Semiconductor 128K x 8 static RAM, 55ns Original PDF
    CY62128DV30L-55ZI Cypress Semiconductor 128K x 8 static RAM, 55ns Original PDF
    CY62128DV30L-55ZRI Cypress Semiconductor 128K x 8 static RAM, 55ns Original PDF
    CY62128DV30L-70SI Cypress Semiconductor 128K x 8 static RAM, 70ns Original PDF
    CY62128DV30L-70ZAI Cypress Semiconductor 128K x 8 static RAM, 70ns Original PDF
    CY62128DV30L-70ZI Cypress Semiconductor 128K x 8 static RAM, 70ns Original PDF
    CY62128DV30L-70ZRI Cypress Semiconductor 128K x 8 static RAM, 70ns Original PDF
    CY62128DV30LL-55SI Cypress Semiconductor 128K x 8 static RAM, 55ns Original PDF
    CY62128DV30LL-55SXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 55NS 32SOIC Original PDF
    CY62128DV30LL-55ZAI Cypress Semiconductor 128K x 8 static RAM, 55ns Original PDF
    CY62128DV30LL-55ZI Cypress Semiconductor 128K x 8 static RAM, 55ns Original PDF
    CY62128DV30LL-55ZRI Cypress Semiconductor 128K x 8 static RAM, 55ns Original PDF
    CY62128DV30LL-70SI Cypress Semiconductor 128K x 8 static RAM, 70ns Original PDF
    CY62128DV30LL-70SXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 70NS 32SOIC Original PDF
    CY62128DV30LL-70ZAI Cypress Semiconductor 128K x 8 static RAM, 70ns Original PDF
    CY62128DV30LL-70ZI Cypress Semiconductor 128K x 8 static RAM, 70ns Original PDF
    CY62128DV30LL-70ZRI Cypress Semiconductor 128K x 8 static RAM, 70ns Original PDF
    CY62128DV30LL-70ZXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 70NS 32TSOP Original PDF

    CY62128DV30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 28DV30 ADVANCE INFORMATION CY62128DV30 MoBL 128K x 8 Static RAM Features • • • • • • • • • portable applications, such as Wireless LAN. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not


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    PDF 28DV30 CY62128DV30 CY62128V

    TSOP 32 thermal resistance

    Abstract: CY62128DV cy62128dv30ll-55ZXI SOIC-32L
    Text: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip


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    PDF CY62128DV30 CY62128V 32-lead TSOP 32 thermal resistance CY62128DV cy62128dv30ll-55ZXI SOIC-32L

    Untitled

    Abstract: No abstract text available
    Text: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip


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    PDF CY62128DV30 CY62128V 32-lead 70-ns

    CY62128DV30

    Abstract: CY62128EV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXI
    Text: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ■ Temperature ranges: ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62128DV30


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    PDF CY62128EV30 CY62128DV30 CY62128DV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXI

    Untitled

    Abstract: No abstract text available
    Text: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip


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    PDF CY62128DV30 CY62128V 32-lead

    Untitled

    Abstract: No abstract text available
    Text: CY62128DV30 MoBL 1-Mb 128K x 8 Static RAM Features • • • • • • • • • an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1


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    PDF CY62128DV30 CY62128V 32-lead

    CY62128DV30LL-55ZI

    Abstract: CY62128DV30LL-70SI CY62128DV30L-55ZI CY62128DV30 CY62128DV30L-55SI CY62128V
    Text: CY62128DV30 MoBL 1 Mb 128K x 8 Static RAM Features • • • • • • • • power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1


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    PDF CY62128DV30 CY62128V CY62128DV30 70-ns CY62128DV30LL-55ZI CY62128DV30LL-70SI CY62128DV30L-55ZI CY62128DV30L-55SI CY62128V

    CY62128DV30LL-55ZI

    Abstract: CY62128DV30LL-70SXI CY62128DV30LL-70ZXI CY62128DV30 CY62128DV30L-55SI CY62128V CY62128DV30LL-70ZAXI
    Text: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip


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    PDF CY62128DV30 CY62128V CY62128DV30LL-55ZI CY62128DV30LL-70SXI CY62128DV30LL-70ZXI CY62128DV30 CY62128DV30L-55SI CY62128V CY62128DV30LL-70ZAXI

    CY62128DV30

    Abstract: CY62128DV30L-55SI CY62128V TSOP 32 thermal resistance
    Text: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip


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    PDF CY62128DV30 CY62128V CY62128DV30 CY62128DV30L-55SI CY62128V TSOP 32 thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: CY62128DV30 MoBL PRELIMINARY 1 Mb 128K x 8 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62128V Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX


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    PDF CY62128DV30 CY62128V 32-lead CY62128DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62128DV30 MoBL 1 Mb 128K x 8 Static RAM Features • • • • • • • • power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1


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    PDF CY62128DV30 CY62128V CY62128DV30

    CY62128DV30

    Abstract: CY62128EV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI CY62128EV30LL-55ZXE
    Text: CY62128EV30 MoBL 1 Mbit 128K x 8 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Temperature ranges– The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active


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    PDF CY62128EV30 CY62128DV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI CY62128EV30LL-55ZXE

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


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    PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    Untitled

    Abstract: No abstract text available
    Text: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features


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    PDF CY62128EV30

    Untitled

    Abstract: No abstract text available
    Text: DLP-FPGA LEAD-FREE USB - FPGA MODULE MOSFET Power Switch 5V 3.3V PWREN USB Type 'B' Connector to Host Windows/ Linux/Mac PC 5V VREGs VCCIO Dual Channel USB IC VCC USBDP USBDM XILINX FPGA CH B 50-pin, 0.9-inch Wide Interface Headers XC3S250E -4TQ144 FTDI FT2232D


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    PDF 50-pin, XC3S250E -4TQ144 FT2232D XC3S250E-4TQ144 200mA TPS79325DBVR OT23-5 IRLML6401 BAT54CT

    Untitled

    Abstract: No abstract text available
    Text: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Functional Description Features The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This


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    PDF CY62128EV30

    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


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    PDF CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    CY62128EV301

    Abstract: No abstract text available
    Text: CY62128EV30 MoBL 1-Mbit 128K x 8 Static RAM 1-Mbit (128K x 8) Static RAM Features Functional Description • Very high speed: 45 ns ■ Temperature ranges: ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Automotive-E: –40°C to +125°C


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    PDF CY62128EV30 CY62128EV301

    Untitled

    Abstract: No abstract text available
    Text: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features


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    PDF CY62128EV30

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


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    PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    K6F1008V2C-YF55

    Abstract: S34 ST 55NS BS62LV1028 CY62128DV30LL-55ZAI CY62128VLL-55ZAI 650-0029
    Text: APPROVED MANUFACTURERS LIST FOR WEB PARTS ITEM NUMBER 650-0029 -WEB 650-0029 PART DESCRIPTION SRAM 128K X8 3.3V 55NS STSOP SMTR REVISION HISTORY Rev F G H ECO # Description of Change Proj Eng E12147 UPDATE DATASHEETS AND RELEASE TO WEB STORE. E12762 ADD NEW CYPRESS P/N AS THEIR REPLACEMENT


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    PDF E12147 E12762 E12885 K6F1008V2C K6F1008V2C-YF55 S34 ST 55NS BS62LV1028 CY62128DV30LL-55ZAI CY62128VLL-55ZAI 650-0029

    24-PIN

    Abstract: CY62128DV30 CY62128EV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI
    Text: CY62128EV30 MoBL 1 Mbit 128K x 8 Static RAM Features Functional Description The CY62128EV30[1] is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


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    PDF CY62128EV30 24-PIN CY62128DV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI