Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BS616LV2016 Search Results

    BS616LV2016 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV2016 Brilliance Semiconductor Original PDF
    BS616LV2016AC Brilliance Semiconductor Original PDF
    BS616LV2016AC-55 Brilliance Semiconductor Original PDF
    BS616LV2016AC-70 Brilliance Semiconductor Original PDF
    BS616LV2016ACG55 Brilliance Semiconductor Original PDF
    BS616LV2016ACG70 Brilliance Semiconductor Original PDF
    BS616LV2016ACP55 Brilliance Semiconductor Original PDF
    BS616LV2016ACP70 Brilliance Semiconductor Original PDF
    BS616LV2016AI Brilliance Semiconductor Original PDF
    BS616LV2016AI-55 Brilliance Semiconductor Original PDF
    BS616LV2016AI-70 Brilliance Semiconductor Original PDF
    BS616LV2016AIG55 Brilliance Semiconductor Original PDF
    BS616LV2016AIG70 Brilliance Semiconductor Original PDF
    BS616LV2016AIP55 Brilliance Semiconductor Original PDF
    BS616LV2016AIP70 Brilliance Semiconductor Original PDF
    BS616LV2016DC Brilliance Semiconductor Original PDF
    BS616LV2016DC-55 Brilliance Semiconductor Original PDF
    BS616LV2016DC-70 Brilliance Semiconductor Original PDF
    BS616LV2016DCG55 Brilliance Semiconductor Original PDF
    BS616LV2016DCG70 Brilliance Semiconductor Original PDF

    BS616LV2016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS616LV2016 x8/x16 II-44 R0201-BS616LV2016

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS616LV2016 x8/x16 II-44 R0201-BS616LV2016A

    125OC

    Abstract: BS616LV2016 BS616LV2016EC BS616LV2016EI
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 25mA Max. at 70ns 2mA (Max.) at 1MHz


    Original     		PDF BS616LV2016 x8/x16 -40OC 125OC II-44 R0201-BS616LV2016A 125OC BS616LV2016 BS616LV2016EC BS616LV2016EI

    BGA-48-0608

    Abstract: BS616LV2016 BS616LV2016AI BS616LV2016DC BS616LV2016EC BS616LV2016EI
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : Operation current : 30mA Max. at 55ns VCC = 3.0V


    Original     		PDF BS616LV2016 6/20uA x8/x16 R0201-BS616LV2016 48-ball BGA-48-0608 BS616LV2016 BS616LV2016AI BS616LV2016DC BS616LV2016EC BS616LV2016EI

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS616LV2016 x8/x16 II-44 R0201-BS616LV2016

    BS616LV2016

    Abstract: BS616LV2016AI BS616LV2016DC BS616LV2016EC BS616LV2016EI BGA-48
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS616LV2016 x8/x16 R0201-BS616LV2016 48-ball BS616LV2016 BS616LV2016AI BS616LV2016DC BS616LV2016EC BS616LV2016EI BGA-48

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    MBI5024

    Abstract: dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963
    Text: LED Driver IC for Display Org. Chiplus Macroblock SITI Toshiba Dallas Maxim STMicro Allegro 16 Bit CS8816 / CS8826 MBI5024 / MBI5026 DM134 / DM135 / DM13C TB62706 / TB62726 MAX6969 / MAX6971 STP16C596 / STP16CP05 A6276 8 Bit CS8808/CS8818 MBI5167 / MBI5168


    Original     		PDF CS8816 CS8826 MBI5024 MBI5026 DM134 DM135 DM13C TB62706 TB62726 MAX6969 dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


    Original     		PDF element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186

    BGA-48-0608

    Abstract: BS616LV2016 BS616LV2016AC BS616LV2016AI BS616LV2016DC BS616LV2016DI BS616LV2016EC BS616LV2016EI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 29mA @55ns operating current I -grade: 30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current


    Original     		PDF R0201-BS616LV2016 BS616LV2016 TSOP2-44 BGA-48-0608 BS616LV2016 BS616LV2016AC BS616LV2016AI BS616LV2016DC BS616LV2016DI BS616LV2016EC BS616LV2016EI TSOP2-44

    BS62LV2006

    Abstract: TSOP-32
    Text: Preliminary Very Low Power/Voltage CMOS SRAM 256K X 8 bit BSI BS62LV2006 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 23mA @55ns operating current I -grade: 25mA (@55ns) operating current


    Original     		PDF BS62LV2006 BS62LV2006 R0201-BS62LV2006 -40oC TSOP-32