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    GAPTEC Electronic GmbH & Co. KG 7.2DBTW4_2424D4.2

    DC-DC IGBT & SIC
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    DigiKey 7.2DBTW4_2424D4.2 Tube 15
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    BTW42 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BTW42 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-1000R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-1000R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-1000R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-1000R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-1000R Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BTW42-1000R Philips Semiconductors THYRISTORS Scan PDF
    BTW42-1000R Philips Semiconductors 1.0kV V[drm] Max., 10A I[T] Max. Silicon Controlled Rectifier Scan PDF
    BTW42-1000RC Philips Semiconductors 1.0kV V[drm] Max., 10A I[T] Max. Silicon Controlled Rectifier Scan PDF
    BTW42-1200R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-1200R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-1200R Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BTW42-200R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-600R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-600R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-600R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-600R Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    BTW42-600R Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF

    BTW42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    aeg t15

    Abstract: N800COB TAG740-200.800 ST018S08P bty91 800r S2014NH SKT16F08DU 1N800COC T12N800COB t7n800
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VDRM V IT Max (A) ITSM (A) lOT Max (A) VOT Max (V) IDRM dv/dt (A) (V/UB) to Operating Temperature Max (8) (OC) Min Max Package Style SeRs, VDRM >= 800 V (Co nt' d) 5 10 15 20 T10N800UOF BT152-800


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    PDF T10N800UOF BT152-800 BT152-800R S2012NH S2014NH 22RIA80 S1412NJ S1414NJ aeg t15 N800COB TAG740-200.800 ST018S08P bty91 800r SKT16F08DU 1N800COC T12N800COB t7n800

    TYNB12

    Abstract: bstd1053m S1612NH tynb10 BStD1053 BSTC1053 BT151-BOOR s1210nh CR10C16 GGG 64
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VDRM IT Max ITSM lOT Max VOT Max IDRM dv/dt V (A) (A) (A) (V) (A) (V/us) to Max (s) Operating Temperature ee) Min Max Package Style SeRs, VDRM >= 800 V (Co nt' d) 5 10 TXS607 -8 (A) TXS606-B (A)


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    PDF TXS607 TXS606-B TYS606-B TYS607 TXNB06 BSTC1053M S1007NJ S1010NJ S1005NH S1007NH TYNB12 bstd1053m S1612NH tynb10 BStD1053 BSTC1053 BT151-BOOR s1210nh CR10C16 GGG 64

    BTW42-600R

    Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
    Text: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase


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    PDF DDbS43i BTW42 BTW42â 1000R. 1000r BTW38 BTW42-600R TSM 1250 1000R mml 600 600R BTW42-600RC

    BTW42

    Abstract: BTW42-600RC 800R BTW38 BTW42-600R
    Text: N AUER PHILIPS/DISCRETE ^53^31 b'lE J> Q0273bb 'H ß H A P X BTW42 SERIES L THYRISTORS Glass-passivated silico n th y ris to rs in metal envelopes w ith high d V [ j/ d t capabilities. T he y are Intended fo r use in pow er c o n tro l c irc u its and sw itching systems w here high transients can occur e.g. phase


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    PDF 00273bb BTW42 BTW42-600R 1000R. btw42â 1000r BTW38 BTW42-600RC 800R

    BTW42

    Abstract: BTW42-600R
    Text: L.5E D P H I L IP S I N T E R N A T I O N A L B 7 1 1 D ä 2 b DGt.5431 3TD • P H I N Jl BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase


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    PDF BTW42 BTW42--600R 1000R. 711002b BTW38 BTW42-600R

    BTW38

    Abstract: 600R 800R BTW42 BTW42-600R BTW42-600RC 1000R tsm 1250
    Text: N AMER PHILIPS/DISCRETE bRE D • ^53^31 0DE73bb ■ APX BTW42 SERIES L THYRISTORS Glass-passivated silico n th y ris to rs in m etal envelopes w ith high d V [ j/ d t capabilities. T hey are intended fo r use in p ow er c o n tro l circ u its and sw itch in g systems where high transients can occur e.g. phase


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    PDF BTW42 BTW42â 1000R. 1000R BTW38 600R 800R BTW42-600R BTW42-600RC 1000R tsm 1250

    Untitled

    Abstract: No abstract text available
    Text: _M_ N AMER PHILIPS/DISCRETE btiSBTBl 0011=143 T • QbE D I BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high d V ^ /d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur (e.g. phase


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    PDF BTW42 BTW42â 1000R. BTW42--600 1000R BTW38

    TSM 1250

    Abstract: BTW42 BTW38 800R BTW42-600R BTW42-600RC IEC134
    Text: fcjbS3c131 QDll':i43 T ObE D N AMER PHI LIPS/ DI SC RE TE BTW42 SERIES ^T~-ar-/£~ THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high dVp/dt capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase


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    PDF BTW42 BTW42-600R 1000R. BTW42- 1000R 0011m BTW38 TSM 1250 800R BTW42-600RC IEC134

    BTW42-600R

    Abstract: 600R 800R BTW38 BTW42 BTW42-600RC IEC134
    Text: N AMER PH ILI PS/DIS CRET E bbSBTBl O Q i n 43 T ObE D BTW42 SERIES KJlzAIsJf' THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high dVp/dt capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase


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    PDF OQin43 BTW42 BTW42-600R 1000R. BTW42â BTW38 600R 800R BTW42-600RC IEC134

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


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    PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    BT145-500R

    Abstract: PHILIPS BT152-400R BTW38-600R 400v 50A Transistor BT148-400R SOT-186 600RU BTW38-600RU 600v BTW38
    Text: N AMER PHILIPS/DISCRETE 30 BSE D • b b S B ' m GOlbSQÖ 5 ■ T -Z S '-O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating PACKAGE OUTLINE AVERAGE ON-STATE CURRENT fT(RMS)m a x - lT (A V )m a x .< l> 2N5064 BT169B D E G TO-92 0.8A TO-92


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    PDF 2N5064 200iiA BT169B 200/iA BT148-400R -500R -600R OT-82 200juA C122F BT145-500R PHILIPS BT152-400R BTW38-600R 400v 50A Transistor SOT-186 600RU BTW38-600RU 600v BTW38

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bb53^31 0D273bb 'Hfl • APX b'lE J> I B T W 4 2 SERIES _ THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V [j/d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase


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    PDF 0D273bb BTW42â 1000R. 42-600R 1000R 0D273bT BTW42 BTW38

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G