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    BS616LV1611 Search Results

    BS616LV1611 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV1611 Brilliance Semiconductor Asynchronous 16M(1Mx16) bits Static RAM Original PDF
    BS616LV1611-55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16 bit Original PDF
    BS616LV1611-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16 bit Original PDF
    BS616LV1611BC-10 Brilliance Semiconductor SRAM Chip, Asynchronous, 16Mbit, 3.3V Supply, Commercial, BGA, 48-Pin Original PDF
    BS616LV1611BC-70 Brilliance Semiconductor SRAM Chip, Asynchronous, 16Mbit, 3.3V Supply, Commercial, BGA, 48-Pin Original PDF
    BS616LV1611BI-10 Brilliance Semiconductor SRAM Chip, Asynchronous, 16Mbit, 3.3V Supply, Industrial, BGA, 48-Pin Original PDF
    BS616LV1611BI-70 Brilliance Semiconductor SRAM Chip, Asynchronous, 16Mbit, 3.3V Supply, Industrial, BGA, 48-Pin Original PDF
    BS616LV1611FC-55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FC-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FCG55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FCG70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FCP55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FCP70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FI-55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FI-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FIG55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FIG70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FIP55 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF
    BS616LV1611FIP70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16-Bit Original PDF

    BS616LV1611 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BS616LV1611

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 1M X 16 bit BS616LV1611 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


    Original     		BS616LV1611 115mA x8/x16 R0201-BS616LV1611 220uA 100uA 110uA BS616LV1611 PDF

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 1M X 16 bit BS616LV1611 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


    Original     		BS616LV1611 115mA x8/x16 R0201-BS616LV1611 220uA 100uA 110uA PDF

    BS616LV1611

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 1M X 16 bit BS616LV1611 Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : Operation current : 46mA Max. at 55ns VCC = 3.0V 2mA (Max.) at 1MHz


    Original     		BS616LV1611 115mA 100uA x8/x16 S616LV1611 R0201-BS616LV1611 220uA 100uA 110uA BS616LV1611 PDF

    125OC

    Abstract: BS616LV1611
    Text: Very Low Power CMOS SRAM 1M X 16 bit BS616LV1611 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 37mA Max. at 70ns 2mA (Max.) at 1MHz


    Original     		BS616LV1611 x8/x16 R0201-BS616LV1611A 125OC BS616LV1611 PDF

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 1M X 16 bit BS616LV1611 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


    Original     		BS616LV1611 115mA x8/x16 R0201-BS616LV1611A PDF

    BS616LV1611

    Abstract: BS616LV1611-55 BS616LV1611-70
    Text: Preliminary BSI Very Low Power/Voltage CMOS SRAM 1M X 16 bit Dual CE Pins BS616LV1611 „ FEATURES • Wide Vcc operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current


    Original     		BS616LV1611 113mA 115mA R0201-BS616LV1611 -40oC BGA-48-0912 BS616LV1611 BS616LV1611-55 BS616LV1611-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M X 16 bit Dual CE Pins BS616LV1611 „ FEATURES • Wide Vcc operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current


    Original     		BS616LV1611 113mA 115mA R0201-BS616LV1611 PDF

    BS616LV1611

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M X 16 bit Dual CE Pins BS616LV1611 „ FEATURES • Wide Vcc operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current


    Original     		BS616LV1611 113mA 115mA R0201-BS616LV1611 BS616LV1611 PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006 PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF