Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BDY71 Search Results

    BDY71 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY71 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=55 / Ic=4 / Hfe=80-200 / fT(Hz)=- / Pwr(W)=29 Original PDF
    BDY71 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY71 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY71 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY71 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BDY71 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY71 Unknown Transistor Replacements Scan PDF
    BDY71 Unknown Transistor Replacements Scan PDF
    BDY71 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY71 RCA Solid State Power Transistor Directory 1976 Scan PDF
    BDY71 SGS-Thomson Transistor Datasheet Scan PDF
    BDY71 Thomson-CSF Condensed Data Book 1977 Scan PDF
    BDY71 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDY71 Thomson-CSF Power Transistor Data Book 1975 Scan PDF
    BDY71X Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package Original PDF

    BDY71 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: / , Lrnc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY71 Silicon NPN Power Transistor DESCRIPTION • Continuous Collector Current-lc= 4A • Collector Power Dissipation: Pc= 29W @TC= 25 °C


    Original     		PDF BDY71 100mA

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO


    Original     		PDF BDY71X O-213AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO


    Original     		PDF BDY71X O-213AA)

    BDY71X

    Abstract: No abstract text available
    Text: BDY71X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF BDY71X O213AA) 1-Aug-02 BDY71X

    BDY71

    Abstract: No abstract text available
    Text: BDY71 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF BDY71 O213AA) 1-Aug-02 BDY71

    Untitled

    Abstract: No abstract text available
    Text: BDY71X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF BDY71X O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BDY71 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF BDY71 O213AA) 30-Jul-02

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    RCA 40310

    Abstract: No abstract text available
    Text: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)


    Original     		PDF 2N1482) O-39/TO-205M O-5/TO-205MA 2N1479* 2N1481* 2N1700 2N1480* 2N1482* 92CS-24062R4 RCA 40310

    BDY77

    Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
    Text: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74


    OCR Scan     		PDF BDY45 20min DDY46 BDY54 BDY55 BDY56 BDY57 BDY58 BDY77 BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36

    2N3054

    Abstract: 2n3773 power Amplifier 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
    Text: Ic to 80 A . . . P t to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . A A i 9U X 9U le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2N3054 2n3773 power Amplifier 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan     		PDF T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


    OCR Scan     		PDF BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2N3055

    Abstract: 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2N3055 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220

    2N1482

    Abstract: 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 BDY37 2n3055 complement
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . . A A i 9U X 9U le a 1 .S A m ax. lc » 3 .S A m ax. P y « 10 W m ax. TO-391* P T - 8 .7 S W m u . (TO-391* 90 x 9 0


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 BDY37 2n3055 complement

    2n3773 power Amplifier

    Abstract: 2N3055 hfe 2n3055 2n3055 complement 2N1482 2N3054 2N344 2N5298 2N5786 2N6478
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2n3773 power Amplifier 2N3055 hfe 2n3055 2n3055 complement 2N1482 2N3054 2N344 2N5298 2N5786 2N6478

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . . A A i 9U X 9U le a 1 .S A m ax. lc » 3 .S A m ax. P y « 10 W m ax. TO-391* P T - 8 .7 S W m u . (TO-391* 90 x 9 0


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 300W TRANSISTOR AUDIO AMPLIFIER 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786

    RCA 528

    Abstract: 2n3055 complement rca 2n3771 40349 transistor RCA 528 Transistor PJ 257 2n5578 RCA 2N3055 transistor 2n3772 complement 2N3055 RCA
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 528 2n3055 complement rca 2n3771 40349 transistor RCA 528 Transistor PJ 257 2n5578 RCA 2N3055 transistor 2n3772 complement 2N3055 RCA

    2n3054

    Abstract: 40349
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2


    OCR Scan     		PDF 2N1482/40349 2N1482) 2N1700 2N1482® O-39/TO-205MD 92CS-2022Î 2n3054 40349

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2


    OCR Scan     		PDF 2N1482/40349 2N1482) 2N1700 2N1482® O-39/TO-205MD 92CS--24062

    2N3054

    Abstract: Emetteur 2N 3054 BDY 276 3054
    Text: 2f\l 3 0 5 4 * BDY 71 NPN S ILIC O N TR A N S IS TO R S , HOMOBASE T R A N S IS TO R S N P N S IL IC IU M , H O M O B ASE 2N 3054 compì, of B D X 14 Preferred device D is p o s itif re com m andé LF large signal power amplification A m p lific a tio n B F grands signaux de puissance


    OCR Scan     		PDF CB-72 2N3054 Emetteur 2N 3054 BDY 276 3054

    2n3055

    Abstract: 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 20100 ct
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2n3055 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 20100 ct

    2n3773 power Amplifier

    Abstract: 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2n3773 power Amplifier 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220