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    Curtis Instruments 803RB2448BCY301O

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    BCY30 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCY30 Central Semiconductor PNP Silicon Transistors, TO-39 Case Scan PDF
    BCY30 Central Semiconductor PNP Silicon TRANSISTORS JEDEC TO-39 CASE Scan PDF
    BCY30 Central Semiconductor TRANS GP BJT PNP 64V 0.05A 3TO-39 Scan PDF
    BCY30 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BCY30 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BCY30 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY30 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BCY30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BCY30 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BCY30 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCY30 Unknown Vintage Transistor Datasheets Scan PDF
    BCY30 Raytheon Selection Guide 1977 Scan PDF
    BCY30 Texas Instruments Discrete Devices 1978 Scan PDF
    BCY30 ZaeriX Short Form Data Catalogue 1972-73 Short Form PDF
    BCY30A Semelab Bipolar PNP Device in a Hermetically Sealed TO5 Metal Package - Pol=PNP / Pkg=TO5 / Vceo=64 / Ic=0.1 / Hfe=10-35 / fT(Hz)=7M / Pwr(W)=0.6 Original PDF
    BCY30A Mullard Quick Reference Guide 1977/78 Scan PDF
    BCY30A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BCY30A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY30A Unknown Transistor Replacements Scan PDF
    BCY30A Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF

    BCY30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCY30A

    Abstract: No abstract text available
    Text: BCY30A Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.


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    PDF BCY30A O205AA) 5/20m 20-Aug-02 BCY30A

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original
    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


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    PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    bcy34

    Abstract: BCY31 bcy32 BCY33
    Text: CENTRAL SEMICONDUCTOR ^5 D E | Ï T f l ^ f a 3 □QQ0357~fl DESCRIPTION The CENTRAL SEMICONDUCTOR BCY30 series types are Silicon PNP Transistors manufactured by the epitaxial planar process for general purpose applications requiring low gain hpf and low leakage.


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    PDF QQ0357 BCY30 BCY31 BCY32 BCY33 BCY34

    bc461

    Abstract: BCY39A BCY87 T071 BC461-6 BCY89 BCY70 BS BCY34A BCY56 BC477
    Text: 4ÖE D • 0133107 0DGQ447 RG4 ■ SMLB SEM ELABE SEHELAB L T J> T -Z >.a I BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 BCW35 BCY30A BCY31A BCY32A DCY33A BCY34A BCY39A BCY40A BCY42


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    PDF 0DGQ447 BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 bc461 BCY39A BCY87 T071 BCY89 BCY70 BS BCY34A BCY56

    BCY31

    Abstract: BCY30 BCY32
    Text: DESCRIPTION . , The CENTRAL SEMICONDUCTOR BCY30 series types are Silicon PNP Transistors manufactured by the epitaxial planar process for general purpose applications requiring low gain hpE and low leakage. MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)


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    PDF bcy30 bcy31 bcy32 bcy33 bcy30 bcy33

    BCY31

    Abstract: 2S303 2S301 BCY34 2S302 BCY32 CV7344 BCY30 2S302/3 2S304
    Text: Silicon Alloy Transistors M Case Outline Silicon A lloy PNP General Purpose Uu 0> Device Type un 1 4 = ¡0 0-23 -6 6 " 38 05 min - Dimensions in mm TO-5 2S301 2S302 2S303 2S304 2S305 BCY30 BCY31 BCY32 BCY33 BCY34 2S3010 2S3020 2S3030 2S3040 Case Outline TO-5


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    PDF 2S301 2S302 2S303 2S304 2S305 BCY30 BCY31 BCY32 BS9300 CV7151 BCY34 CV7344 2S302/3

    BCY31

    Abstract: BCY32 BCY34 BCY30 BCY33
    Text: DESCRIPTION . , The CENTRAL SEMICONDUCTOR BCY30 series types are Silicon PNP Transistors manufactured by the epitaxial planar process for general purpose applications requiring low gain hpE and low leakage. MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)


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    PDF bcy30 bcy31 bcy32 bcy33 bcy30 bcy33 BCY34

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    BC140 equivalent

    Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 502N329A BCY56 BC140 equivalent 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent

    BC140 equivalent

    Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
    Text: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF


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    PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 BC140 equivalent BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA

    2n3019 equivalent

    Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


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    PDF 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31

    bcy59 equivalent

    Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
    Text: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943


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    PDF 2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 52N329A bcy59 equivalent BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


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    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    T0-92

    Abstract: T0236
    Text: S E M E L A B LTD TVpe No. Reliability Option 37E D Polarity Package v CEO •c cont • hF E @ ¿1133167 G G Q 0 0 3 b V cE/'C <T PD BC547A BC547B BC547C BC548 BC548A NPN NPN NPN NPN NPN T092 T092 T092 T092 T092 45 45 45 30 30 0.1 0.1 0.1 0.1 0.1 110-220


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    PDF BC547A BC547B BC547C BC548 BC548A BC548B BC548C BC549 BC549A BC549B T0-92 T0236

    TRANSISTOR BC147

    Abstract: BC148 transistor npn transistor bc148 TRANSISTOR BC149 BC158 transistor transistor BC118 TRANSISTOR BC135 transistor Bc117 transistor BC148 bc117 Transistor
    Text: 53 IkeìuX T ran sisto rs Continued Notes <Y> <2> <4> 5 M inim um value Average value Max. unitateralized power gain Max. frequency o f oscillation W ith heat sink ^tot: Max. total dissipation in free air at 25°C ambient temp. Max. collector-to-base voltage, em itter


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    PDF ASZ20 100mc121 ASZ21 120mW 300mcn BC107 300mW 300mc121 330mW 50mcnl TRANSISTOR BC147 BC148 transistor npn transistor bc148 TRANSISTOR BC149 BC158 transistor transistor BC118 TRANSISTOR BC135 transistor Bc117 transistor BC148 bc117 Transistor