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    BCV27 Price and Stock

    onsemi BCV27

    TRANS NPN DARL 30V 1.2A SOT23-3
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    DigiKey BCV27 Reel 49,700 3,000
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    BCV27 Ammo Pack 41 Weeks, 4 Days 1
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    Mouser Electronics BCV27 68,902
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    Verical BCV27 24,000 3,000
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    Onlinecomponents.com BCV27 24,000
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    TME BCV27 900 1
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    Avnet Asia BCV27 10 Weeks 30,000
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    Chip1Stop BCV27 Cut Tape 17,950
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    EBV Elektronik BCV27 27,000 12 Weeks 3,000
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    Flip Electronics BCV27 56,276
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    New Advantage Corporation BCV27 1,266,000 1
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    Nexperia BCV27,215

    TRANS NPN DARL 30V 0.5A TO236AB
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    DigiKey BCV27,215 Digi-Reel 2,364 1
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    BCV27,215 Cut Tape 2,364 1
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    BCV27,215 Reel 3,000
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    Mouser Electronics BCV27,215 15,492
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    Verical BCV27,215 2,608,416 11,905
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    BCV27,215 88,822 11,905
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    BCV27,215 57,000 3,000
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    Arrow Electronics BCV27,215 57,000 6 Weeks 3,000
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    BCV27,215 45,000 6 Weeks 3,000
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    BCV27,215 Cut Strips 384 6 Weeks 384
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    BCV27,215 Reel 3,000
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    Rochester Electronics BCV27,215 2,703,228 1
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    TTI BCV27,215 Reel 96,000 3,000
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    Avnet Silica BCV27,215 60,000 8 Weeks 3,000
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    EBV Elektronik BCV27,215 6,000 8 Weeks 3,000
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    New Advantage Corporation BCV27,215 285,000 1
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    Diodes Incorporated BCV27TC

    TRANS NPN DARL 30V 0.5A SOT23-3
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    DigiKey BCV27TC Reel 10,000
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    Diodes Incorporated BCV27TA

    TRANS NPN DARL 30V 0.5A SOT23-3
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    DigiKey BCV27TA Reel 3,000
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    BCV27TA Digi-Reel 1
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    Nexperia BCV27-QR

    BCV27-Q/SOT23/TO-236AB
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    DigiKey BCV27-QR Reel 3,000
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    Avnet Americas BCV27-QR Reel 6 Weeks 24,000
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    Avnet Silica BCV27-QR 63,000 8 Weeks 3,000
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    BCV27 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCV27 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
    BCV27 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    BCV27 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    BCV27 Infineon Technologies NPN Silicon Darlington Transistor for general AF applications Original PDF
    BCV27 Infineon Technologies Darlington Transistors; Package: PG-SOT23-3; Polarity: NPN; VCEO (max): 30.0 V; Ptot (max): 360.0 mW; hFE (min): 20,000.0; IC: 100.0 mA; Original PDF
    BCV27 National Semiconductor NPN Darlington Transistor Original PDF
    BCV27 NXP Semiconductors BCV27 - NPN Darlington transistors - Complement: BCV26 ; fT min: 220 typ. MHz; hFE max:>20000 ; hFE min: 20000 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 250 mW; VCES max: 30 V Original PDF
    BCV27 Philips Semiconductors NPN Darlington Transistor Original PDF
    BCV27 Philips Semiconductors Silicon Planar Darlington Transistor Original PDF
    BCV27 Siemens NPN Silicon Darlington Transistors (For general AF applications High collector current) Original PDF
    BCV27 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BCV27 Siemens Cross Reference Guide 1998 Original PDF
    BCV27 Zetex Semiconductors SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS Original PDF
    BCV27 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    BCV27 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCV27 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BCV27 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BCV27 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BCV27 National Semiconductor Pro Electron Surface Mount Bipolar Devices Scan PDF
    BCV27 National Semiconductor Darlington Transistors Scan PDF

    BCV27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCV26

    Abstract: BCV27 BCV46 BCV47
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BCV27; BCV47 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet NPN Darlington transistors BCV27; BCV47 FEATURES PINNING • Medium current max. 500 mA


    Original
    PDF BCV27; BCV47 BCV26 BCV46. BCV27 MAM298 R75/05/pp7 BCV27 BCV46 BCV47

    BCV27

    Abstract: transistor af 178 npn darlington
    Text: BCV27 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L For general AF application high collector current 3 3 C B Top View High current gain


    Original
    PDF BCV27 500mA OT-23 22-Jan-2010 100MHz BCV27 transistor af 178 npn darlington

    NPN SOT23-6

    Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
    Text: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589


    Original
    PDF BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 NPN SOT23-6 ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23

    BCV28

    Abstract: BCV27 BCV47 BCV48 FMMT38A DSA003671
    Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C B PARTMARKING DETAILS – BCV27 – ZFF BCV47 – ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.


    Original
    PDF BCV27 BCV47 BCV28 BCV48 BCV28 BCV27 BCV47 BCV48 FMMT38A DSA003671

    SOT23 BCV 27

    Abstract: fgs npn marking BCV BCV26 BCV27 BCV46 BCV47 marking BCV H
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV26, BCV46 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type


    Original
    PDF BCV27, BCV47 BCV26, BCV46 BCV27 SOT23 BCV 27 fgs npn marking BCV BCV26 BCV27 BCV46 BCV47 marking BCV H

    Untitled

    Abstract: No abstract text available
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


    Original
    PDF BCV26, BCV46 BCV27, BCV47 VPS05161 BCV26 BCV46

    Untitled

    Abstract: No abstract text available
    Text: BCV26 IS OBSOLETE PLEASE USE MMBTA64 BCV46 IS CURRENTLY ACTIVE BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47


    Original
    PDF BCV26 MMBTA64 BCV46 BCV27 BCV47

    BCV47

    Abstract: No abstract text available
    Text: BCV27 IS OBSOLETE PLEASE USE MMBT6427 BCV47 IS CURRENTLY ACTIVE BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C


    Original
    PDF BCV27 MMBT6427 BCV47 BCV27 BCV28 BCV47 BCV48

    BCV27

    Abstract: No abstract text available
    Text: BCV27 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage VEBO 10


    Original
    PDF BCV27 OT-23 BCV27

    bcv47 npn darlington

    Abstract: Diodes BCV47 BCV47 BCV27
    Text: BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 C Parameter O Symbol BCV27 BCV47 BCV27 BCV47 Collector Base Voltage Collector Emitter Voltage Value 40 80 30 60 VCBO VCEO


    Original
    PDF BCV27 BCV47 OT-23 BCV27 bcv47 npn darlington Diodes BCV47 BCV47

    BCV47

    Abstract: No abstract text available
    Text: BCV27 BCV47 SMALL SIGNAL NPN DARLINGTON TRANSISTORS • ■ ■ ■ Type Marking BCV27 FF BCV47 FG SILICON EPITAXIAL PLANAR NPN DARLINGTON TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE DARLINGTON HIGH GAIN, HIGH INPUT IMPEDANCE


    Original
    PDF BCV27 BCV47 BCV26 BCV46 OT-23 BCV47

    transistor 102

    Abstract: BCV27 BCV26
    Text: BCV27 Darlington Transistor SOT-23 FEATURES .122 3.1 .118 (3.0) .016 (0.4) ♦ High collector current ♦ High current gain ♦ NPN Silicon Planar Darlington Transistor Top View .056 (1.43) .052 (1.33) 3 BCV26 is recommended. 2 .016 (0.4) .045 (1.15) .037 (0.95)


    Original
    PDF BCV27 OT-23 BCV26 OT-23 transistor 102 BCV27

    smd npn darlington bcv47

    Abstract: smd npn darlington BCV27 BCV47 TYP220 100MHZ NPN TRANSISTORS smd 5v
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON TRANSISTORS BCV27 BCV47 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking:BCV27= FF BCV47= FG ABSOLUTE MAXIMUM RATINGS


    Original
    PDF BCV27 BCV47 OT-23 BCV27= BCV47= BCV27 C-120 47Rev131004E smd npn darlington bcv47 smd npn darlington BCV47 TYP220 100MHZ NPN TRANSISTORS smd 5v

    Marking Code FGs

    Abstract: No abstract text available
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23


    Original
    PDF BCV27, BCV47 BCV26, BCV46 VPS05161 BCV27 BCV47 Marking Code FGs

    BCV47

    Abstract: BCV26 BCV27 BCV46
    Text: BCV27, BCV47 NPN Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Version 2004-01-20 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4


    Original
    PDF BCV27, BCV47 OT-23 O-236) UL94V-0 BCV27 BCV26, BCV46 BCV47 BCV26 BCV27 BCV46

    BCV26

    Abstract: BCV27 BCV46 BCV47
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs


    Original
    PDF BCV26, BCV46 BCV27, BCV47 BCV26 BCV26 BCV27 BCV46 BCV47

    Untitled

    Abstract: No abstract text available
    Text: i q ä l j ! i Discrete POW ER & Signal Technologies a ^ i Bi'MICDNPÜCTPR BCV27 M a rk : F F NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05.


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    PDF BCV27

    BCV47 philips

    Abstract: JJ SOT23 BCV27 BCV47
    Text: • btS3*ì31 0024537 Ifl? H A P X N AMER PHILIPS/DISCRETE b?E D BCV27 BCV47 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SO T23 envelope. P-N-P complement is B C V 26/46. QUICK REFERENCE DATA BCV27 Collector-emitter voltage open base


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    PDF btS3T31 BCV27 BCV47 BCV26/46. BCV47 philips JJ SOT23 BCV47

    BCV47

    Abstract: BCV27 BCV26 BCV46
    Text: Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 FEATURES PINNING • Medium current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • High DC current gain (min. 20000). 2 emitter 3 collector APPLICATIONS


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    PDF BCV27; BCV47 BCV26 BCV46. BCV27 MAM29S BCV46

    Untitled

    Abstract: No abstract text available
    Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * H igh VCE0 * L o w s a tu ra tio n v o lta g e CO M PLEM ENTARY TYPES - p C BCV27 - BCV28 BCV47 - BCV48 PAR TM ARKING DETAILS - BCV27 - ZFF B C V 4 7 - ZFG SOT23


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    PDF BCV27 BCV28 BCV47 BCV48 BCV47

    Untitled

    Abstract: No abstract text available
    Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * HighVCE0 * Low saturation voltage COMPLEMENTARY TYPES- BCV27 - BCV28 BCV47 - BCV48 PARTMARKING DETAILS - 0w / BCV27 - ZFF BCV47-ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.


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    PDF BCV27 BCV47 BCV27 BCV28 BCV47 BCV48 BCV47-ZFG

    BC516

    Abstract: BC517
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Darlington Transistors Type M axim um R atings N=NPN P=PNP BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BCV48 BCV49 BSP50 BSP51 BSP52 BSP60 BSP61 BSP62 PZTA13 PZTA14


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    PDF BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BC516 BC517

    BCV27

    Abstract: mark ff SC10100
    Text: uc tor ‘ BCV27 Discrete POWER & Signal Technologies BCV27 M a rk : F F NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*


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    PDF BCV27 bS01130 bSD113D BCV27 mark ff SC10100

    P25 PNP

    Abstract: SO4401 2369 BCV27 BCV47
    Text: F Z J SGS-THOMSON SURFACE MOUNT DEVICES ^ 7 # RföD [^©[I[L[i gra©K!l D O S GENERAL PURPOSE & INDUSTRIAL NPN DARLINGTONS Type VCBO v CEO •c ptot hpE @ (C 1 VCE VCE (sat @ >C ' 'B fT typ Marking max BCV27 BCV47 SO 517 (V) (V) (mA) (mW) 40 80 40 30 60


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    PDF BCV27 BCV47 P25 PNP SO4401 2369