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    TURCK Inc RSVRKV493-4.6M

    |Turck RSVRKV493-4.6M
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    Newark RSVRKV493-4.6M Bulk 1
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    National Semiconductor Corporation 9346M14

    Electronic Component
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    ComSIT USA 9346M14 642
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    9346M Datasheets Context Search

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    NMC9346

    Abstract: marking code LOU 9346M NMC9346M14
    Text: NATL SEMICOND i 1EHORY> IDE D | tSG112b □ □fc.lbbS T | T -4 6 -1 3 -2 7 National Semiconductor NMC9346 1024-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9346 is a 1024-bit non-volatile, sequential E2PROM, fabricated using advanced N-channel E2PROM


    OCR Scan     		PDF tSG112b NMC9346 NMC9346 1024-Bit COP400 9W60WN marking code LOU 9346M NMC9346M14

    NMC9346N

    Abstract: mmc9346 9346M 9346m14 NMC9346EN 9346MM14 MMC9346E MMC9346M NMC9346EM COP400
    Text: NATL SEMICOND i 1EHORY> IDE D | tSG112b □ □fc.lbbS T | T -4 6 -1 3 -2 7 National Semiconductor NMC9346 1024-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9346 is a 1024-bit non-volatile, sequential E2PROM, fabricated using advanced N-channel E2PROM


    OCR Scan     		PDF bSD112t T-46-13-27 NMC9346 1024-Bit COP400 01XXXX D15-D0 NMC9346N mmc9346 9346M 9346m14 NMC9346EN 9346MM14 MMC9346E MMC9346M NMC9346EM

    Untitled

    Abstract: No abstract text available
    Text: M9346 ADVANCE DATA 1024 BIT 64 x 16 SERIAL EEPROM • • • • • • • • • LOW COST SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V=t 10%) TTL COMPATIBLE 6 4 x 1 6 READ/WRITE MEMORY LOW STANDBY POWER NON-VOLATILE ERASE AND WRITE RELIABLE FLOTOX PROCESS


    OCR Scan     		PDF M9346 64x16 M9346 64x16. 16-bit