Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RET E/ OP TO } 90972S0 TOSHIBA T b oooñoifl DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED TYPE_ GENERAL PURPOSE POWER TRANSISTOR. Unit in mm POWER REGULATOR, SWITCHING AND SOLENOID fiz 50MAX. DRIVE APPLICATIONS. 021.0 M AX r . •■■
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90972S0
50MAX.
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YTF840
Abstract: Silicon N Channel 16Mn
Text: TOSHIBA dF TG^ESD { D I S C R E T E / O P T OD- 90972S0 TOSHIBA CDIS C R E T E / O P T O tfo s ìtìtu i 990 16900 GDltTÜD D T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR YTF840 SILICON N CHANNEL MOS T Y P E TECHNICAL DATA (ff-MOSI) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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90972S0
YTF840
250uA
250uA
50rage
-55M50
Silicon N Channel
16Mn
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Untitled
Abstract: No abstract text available
Text: TT TOSHIBA {DISCRETE/OPTO} D e | ‘ì D c17E5D QülbûlO 5 99D 16810 9097250 TOSHIBA <DISCRETE/OPTO ¿fasìubt SEMICONDUCTOR TOSHIBA DT-S^-lS FIELD EFFECT TRANSISTOR Y T F 2 5 3 SILICON N C H A NNEL MOS TYPE TECHNICAL DATA 71 -MOS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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c17E5D
100nA
250uA
00A/ys
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} "ri 9097250 TOSHIBA DISCRETE/OPTO ^oiìììlm DE I TDTTSSD DOlbflflS 5 99D 16882 Drr_3 q_ (3 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE Y T F 6 A 3 (ff-HOS H) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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100nA
250uA
250pUÃ
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