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    IXYS Corporation IXTQ88N28T

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    88N28T

    Abstract: IXTQ88N28T ixtq
    Text: IXTQ 88N28T Advance Technical Infomation IXTQ 88N28T Trench Gate Power MOSFET VDSS ID25 RDS on = 280 V = 88 A Ω = 42 mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 280 V VDGR


    Original     		PDF 88N28T DS99353A 88N28T IXTQ88N28T ixtq