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    STMicroelectronics STY80NM60N

    MOSFET N-CH 600V 74A MAX247
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    80NM60 Datasheets Context Search

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    STY80NM60N

    Abstract: 80nm60 JESD97
    Text: 80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID 80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge


    Original     		STY80NM60N Max247 STY80NM60N 80nm60 JESD97 PDF

    80NM60N

    Abstract: JESD97 STY80NM60N 80nm60
    Text: 80NM60N N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh Power MOSFET Preliminary Data Features Type VDSS RDS on ID Pw 80NM60N 600 V < 0.040 Ω 80 A 560 W • 100% avalanche tested ■ Low input capacitance and gate charge ■


    Original     		STY80NM60N Max247 80NM60N JESD97 STY80NM60N 80nm60 PDF

    14210

    Abstract: No abstract text available
    Text: 80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID 80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge


    Original     		STY80NM60N Max247 Max247 14210 PDF

    JESD97

    Abstract: STY80NM60N 80NM60N
    Text: 80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID 80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge


    Original     		STY80NM60N Max247 JESD97 STY80NM60N 80NM60N PDF

    STY80NM60N

    Abstract: 80NM60N
    Text: 80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh II Power MOSFET Max247 Features Type VDSS @ TJmax RDS on max ID 80NM60N 650 V < 0.035 Ω 74 A • The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge


    Original     		STY80NM60N Max247 STY80NM60N 80NM60N PDF