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    8 K X 8 BIT Search Results

    8 K X 8 BIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74ALVCH162344PA Renesas Electronics Corporation 3.3V FAST CMOS 8BIT 1:4 B Visit Renesas Electronics Corporation
    ALVCH162344U Renesas Electronics Corporation 3.3V FAST CMOS 8BIT 1:4 B Visit Renesas Electronics Corporation
    74ALVCH162344PV Renesas Electronics Corporation 3.3V FAST CMOS 8BIT 1:4 B Visit Renesas Electronics Corporation
    74ALVCH162344PV8 Renesas Electronics Corporation 3.3V FAST CMOS 8BIT 1:4 B Visit Renesas Electronics Corporation
    74ALVCH162344PA8 Renesas Electronics Corporation 3.3V FAST CMOS 8BIT 1:4 B Visit Renesas Electronics Corporation

    8 K X 8 BIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vr4cu

    Abstract: 945 mercury MOTHERBOARD CIRCUIT diagram 945 MOTHERBOARD CIRCUIT diagram 128MB PC3200 DDR CL3 VR4CU647228D VR4CU287228E PC2100 spd 3465 ddr pc3200 64m 72 single rank IDD3P
    Text: DDRI UNBUFFERED DIMM VR4CUxxxx28xxx MODULE CONFIGURATIONS Non-ECC Module Device Configuration Configuration 128MB 16M x 64 16M x 8 bit 8 VR4CU166428C(*)H 128MB 16M x 64 16M x 8 bit (8) VR4CU166428C(*)K 128MB 16M x 64 16M x 8 bit (8) VR4CU166428C(*)P 256MB


    Original     		PDF VR4CUxxxx28xxx 128MB VR4CU166428C( 256MB VR4CU326428C( vr4cu 945 mercury MOTHERBOARD CIRCUIT diagram 945 MOTHERBOARD CIRCUIT diagram 128MB PC3200 DDR CL3 VR4CU647228D VR4CU287228E PC2100 spd 3465 ddr pc3200 64m 72 single rank IDD3P

    CY14a101

    Abstract: CY14A101L
    Text: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small


    Original     		PDF CY14V101LA CY14V101NA 8/64K CY14V101LA/CY14V101NA CY14a101 CY14A101L

    2fu smd transistor

    Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
    Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR


    Original     		PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA CY14B101NA 1-Mbit 128K x 8/64K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K x 8 (CY14B101LA) or 64 K x 16 (CY14B101NA) ■ Hands off automatic STORE on power down with only a small


    Original     		PDF CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI

    CY14a101

    Abstract: CY14V101LA-BA45 CY14A101L
    Text: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small


    Original     		PDF CY14V101LA CY14V101NA 8/64K CY14V101LA/CY14V101NA CY14a101 CY14V101LA-BA45 CY14A101L

    TLO32

    Abstract: 948AL N64S818HAS21I N64S818HAT21I
    Text: N64S818HA 64 Kb Low Power Serial SRAMs 8 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 K serially accessed Static Random Access Memory, internally organized as 8 K words by 8 bits.


    Original     		PDF N64S818HA N64S818HA N64S818HA/D TLO32 948AL N64S818HAS21I N64S818HAT21I

    Untitled

    Abstract: No abstract text available
    Text: N64S830HA 64 kb Low Power Serial SRAMs 8 k x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 k serially accessed Static Random Access Memory, internally organized as 8 k words by 8 bits.


    Original     		PDF N64S830HA N64S830HA/D

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 12 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung K M 4 2 8 C 1 2 8 is a CMOS 1 2 8 K X 8 bit Dual Port DRAM. It consists ot a 1 2 8 K X 8 dynamic random


    OCR Scan     		PDF KM428C128 40-PIN 40/44-PIN

    28c128

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 8 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random


    OCR Scan     		PDF KM428C128 428C128 40-PIN 28c128

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 8 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random


    OCR Scan     		PDF KM428C128 428C128 100ns 125ns 150ns 180ns 40-PIN

    Untitled

    Abstract: No abstract text available
    Text: - D ata R A M / ROM bit 6k X 2 3 - - 8kx23 W ork RAM (bit) LCD segm ent Model No. I k x 8 /2 5 6 x 4 480 SM3503 1 5 1 2 X 8 /2 5 6 X 4 480 SM3504 < 5 1 2 X 8 /2 5 6 X 4 384 SM3507 2 k X 8 /2 5 6 X 4 540 SM3509 8 k X 8 /2 5 6 X 4 540 SM3512 MICROCOMPUTERS


    OCR Scan     		PDF SM3503 SM3504 SM3507 SM3509 SM3512 SM3514 SM3515 SM3508 SM3511 SM3513

    Untitled

    Abstract: No abstract text available
    Text: 8751H/8753H Single-Chip 8-Bit Microcontroller with 4K /8 K Bytes of EPROM DISTINCTIVE CHARACTERISTICS • • • • • • 4K X 8 EPROM 8751H ; 8 K x 8 EPROM (8753H) 1 2 8 x 8 RAM Four 8 -bit ports, 32 I/O lines; programmable serial port Two 16-bit Tim er/E vent counters


    OCR Scan     		PDF 8751H/8753H 8751H) 8753H) 16-bit 8751H 8753H 8751H, 48TCLCL

    Untitled

    Abstract: No abstract text available
    Text: 64K 32K 16K 8 K x 8 Bit 4 K x 8 Bit 2 K x 8 Bit X25648/49 X25328/29 X 25168/69 V cc Supervisory Circuit w/Serial E2PROM FEATURES DESCRIPTION • Low Vcc Detection and Reset Assertion — Reset Signal Valid to Vcc=1V • Save Critical Data With Block Lock Protection


    OCR Scan     		PDF X25648/49 X25328/29

    Untitled

    Abstract: No abstract text available
    Text: 64K 32K 16K X25643/45 X25323/25 X 25163/65 8 K x 8 Bit 4 K x 8 Bit 2 K x 8 Bit Programmable Watchdog Tim er & V qq Supervisory Circuit w/Serial E2PROM FEATURES DESCRIPTION • Programmable Watchdog Timer • Low Vcc Detection and Reset Assertion — Reset Signal Valid to Vcc=1V


    OCR Scan     		PDF X25643/45 X25323/25

    .5555b

    Abstract: 29F200 29F200 flash AS29 29f200 70 08000h-OFFFFh 29F200-55 29f200-90 AS29F200T
    Text: H ig h p e r f o r m a n c e 2 S 6 K X 8 /1 2 8 K X 16 5V CM OS Flash EEPROM a | AS29F200 A 2 5 6 K X 8 /1 2 8 K X 1 6 CMOS Flash EEPROM Preliminaiy information Features • O r g a n iz a t io n : 2 5 6 K X 8 o r 1 2 8 K X 1 6 • S e c to r a r c h ite c tu r e


    OCR Scan     		PDF AS29F200 2S6KX8/128KX16 256KX8/128KX16 256KX8 128KX16 endur-90TÃ AS29F200T-70TC AS29F200T-70TI AS29F200T-90TC AS29F200T-90T1 .5555b 29F200 29F200 flash AS29 29f200 70 08000h-OFFFFh 29F200-55 29f200-90 AS29F200T

    A17E

    Abstract: CXK382001 CXK384001
    Text: C X K 384001/382001 SONY 524,288 /262,144-word X 8-bit CMOS Mask Programmable ROM Description CXK384001 / 382001 is a CMOS m askprogram m able ROM organized as 5 2 4 ,2 8 8 w o rds by 8 -b it C X K 3 8 4 0 0 1 and 2 6 2 ,1 4 4 w o rds by 8-bit (C X K 382001). The chip enable


    OCR Scan     		PDF CXK384001/382001 144-word CXK384001 CXK384001 CXK382001) 200ns 200ns 10OmW 288-word A17E CXK382001

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification 8 K x 8-bit static CMOS EEPROM with PAGE-ERASE option FEATURES GENERAL DESCRIPTION • Low Power CMOS The PCF29F64 is an 8 K x 8-bit floating gate electrically erasable programmable read only memory EEPROM ,


    OCR Scan     		PDF 32-byte 256-byte PCF29F64

    8751H

    Abstract: ta 8751h 8753H variable oscillator Z1P21 4kx8 eprom
    Text: 8751H/8753H Single-Chip 8-Bit Microcontroller MILITARY INFORMATION • • • • M ilitary Tem perature Range - - 5 5 to + 125°C Tc 4 K x 8 EPROM (8751); 8 K x 8 EPROM (8753) 1 2 8 x 8 RAM 64K bytes Program M em ory space 64K bytes Data M em ory space


    OCR Scan     		PDF 8751H/8753H 128x8 16-bit 8751H 8753H 8751H, 8753H, 12-MHz 12tCLCL 10tCLCL-133 ta 8751h variable oscillator Z1P21 4kx8 eprom

    DDA11A

    Abstract: ma 6116 f6 tms 4408 d6d1 tele lg tv 29" circuits diagrams colour tv Pt 1000 sensor siemens Siemens norm SN 40 263
    Text: SIEMENS Teletext Processor SD A 5243-2 Preliminary Data MOS 1C Features • • • • • • • • • Microcomputer controlled via I2C bus includes full memory access Uses standard 8 K x 8 static, 8 K x 8 dyn. or two 8 K x 4 dyn. RAMs Can store 8 teletext pages and acquire 4 pages simultaneously


    OCR Scan     		PDF 60-Hz 67100-H5031 P-DIP-40 DDA11A ma 6116 f6 tms 4408 d6d1 tele lg tv 29" circuits diagrams colour tv Pt 1000 sensor siemens Siemens norm SN 40 263

    A16Q2

    Abstract: No abstract text available
    Text: sony . C X K 5 8 1 1 0 O T M /Y M 131072-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 8 1 10OTM /YM is a 1M bits, 131072 words by 8 bits, C M O S static RAM . It Is suitable for portable and C XK 58110OTM 32 pin TS O P Plastic C X K 58110OYM


    OCR Scan     		PDF 131072-word 10OTM 58110OTM 58110OYM XK581100TM 581100YM CXK581 10OTM TSQPO32-P-O02O-A 10OYM A16Q2

    LH5268AD-10LL

    Abstract: LH5268A
    Text: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    OCR Scan     		PDF LH5268A 28-pin, 600-mil 300-mil 450-mil LH5268A 28-pin LH5268AD-10LL

    128X512

    Abstract: No abstract text available
    Text: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    OCR Scan     		PDF LH5268A 28-pin, 600-mil 300-mil 450-mil 28-pin 128X512

    80c535

    Abstract: SAB83C515H-4J Wiring Diagram Siemens stt SAB80C515
    Text: SIEMENS SAB 83C515H-3J / 83C515H-4J 8-Bit CMOS Microcontroller Advance Information SAB 83C515H-3J/83C515H-4J CMOS microcontroller with user programmable E2PROM • 8 K X 8 E2PROM SAB 83C515H-3J • 16-bit watchdog timer • 16 K x 8 E2PROM (SAB 83C515H-4J)


    OCR Scan     		PDF SAB83C515H-3J SAB83C515H-4J 83C515H-3J/83C515H-4J 83C515H-3J) 83C515H-4J) 16-bit fl53SbOS 83C515H-3J/83C515H-4J CL-CC-68-J 80c535 Wiring Diagram Siemens stt SAB80C515

    Untitled

    Abstract: No abstract text available
    Text: SONY C X K 5865P /M « , 8 K-word x 8 bit High Speed CMOS Static RAM Description o 0L Preliminary Package Outline The C X K 5 8 6 5 P / M is a 6 5 ,5 3 6 bits high speed C M O S static R A M organized as 8 ,19 2 w ord s by 8 bits and operates from a sin gle 5 V supply. The


    OCR Scan     		PDF 5865P s/55n s/70n 150jU