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    Analog Devices Inc LTC4313IDD-3-PBF

    IC ACCELERATOR I2C HOTSWAP 8DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LTC4313IDD-3-PBF Tube 851 1
    • 1 $9.73
    • 10 $6.75
    • 100 $5.1213
    • 1000 $4.24024
    • 10000 $4.24024
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    Analog Devices Inc LTC3388IDD-3-PBF

    IC REG BUCK PROG 50MA 10DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LTC3388IDD-3-PBF Tube 398 1
    • 1 $11.55
    • 10 $8.103
    • 100 $6.2201
    • 1000 $5.20248
    • 10000 $5.20248
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    Analog Devices Inc LT3015IDD-3-PBF

    IC REG LINEAR -3V 1.5A 8DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LT3015IDD-3-PBF Tube 121 1
    • 1 $10.37
    • 10 $7.227
    • 100 $5.5079
    • 1000 $5.5079
    • 10000 $5.5079
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    Analog Devices Inc LTC4380IDD-3-PBF

    IC LOW CUR SURGE STOPPER 10DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LTC4380IDD-3-PBF Tube 111 1
    • 1 $9.5
    • 10 $6.429
    • 100 $9.5
    • 1000 $4.27499
    • 10000 $4.27499
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    Analog Devices Inc LTC6957IDD-3-PBF

    IC CLK BUFFER DVR 1:2 12DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LTC6957IDD-3-PBF Tube 1
    • 1 $11.66
    • 10 $7.991
    • 100 $11.66
    • 1000 $5.625
    • 10000 $5.625
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    IDD3P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Dec. 2004 1.1 1. Corrected PIN ASSIGNMENT A12 to NC Jan. 2005 1.2 1. Changed IDD3P and IDD3PS 3mA to 5mA


    Original     		PDF 128Mb 16bits -40oC 128Mbit 8Mx16bit) HY57V281620E

    Untitled

    Abstract: No abstract text available
    Text: 128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B L F8-J/M/K/H/L Document Title 128Mx64 bits Unbuffered DDR SO-DIMM Revision History No. History Draft Date 0.1 Initial Draft Jan. 2004 0.2 IDD3P Value Adjusted from 216 to 192 [mA] at Page 9 Apr. 2004 Remark


    Original     		PDF 128Mx64 HYMD512M646B 200-pin

    HY57V281620ELT

    Abstract: HY57V281620ET
    Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Dec. 2004 1.1 1. Corrected PIN ASSIGNMENT A12 to NC Jan. 2005 1.2 1. Changed IDD3P and IDD3PS 3mA to 5mA


    Original     		PDF 128Mb 16bits -40oC 128Mbit 8Mx16bit) HY57V281arge HY57V281620E 400mil HY57V281620ELT HY57V281620ET

    DDR200

    Abstract: DDR266 DDR266A DDR266B DDR333
    Text: 128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B L F8-J/M/K/H/L Document Title 128Mx64 bits Unbuffered DDR SO-DIMM Revision History No. History Draft Date 0.1 Initial Draft Jan. 2004 0.2 IDD3P Value Adjusted from 216 to 192 [mA] at Page 9 Apr. 2004 0.3 Reflected a “notational” change in module thickness on page 17 - Not Real ! -


    Original     		PDF 128Mx64 HYMD512M646B DDR200 DDR266 DDR266A DDR266B DDR333

    K4H560838D-TCC4

    Abstract: K4H560838D-TCCC DDR333 DDR400 K4H561638D-TCC4 K4H561638D-TCCC
    Text: DDR SDRAM 256Mb D-die x8, x16 DDR SDRAM 256Mb D-die DDR400 SDRAM Specification Revision 1.1 Rev. 1.1 Feb. 2003 DDR SDRAM 256Mb D-die (x8, x16) DDR SDRAM 256Mb D-die Revision History Revison 0.0 (June. 2002) 1. First release Revison 0.1 (Aug. 2002) - Changed IDD3P value from 40mA to 55m


    Original     		PDF 256Mb DDR400 200MHz 400Mbps K4H560838D-TCC4 K4H560838D-TCCC DDR333 K4H561638D-TCC4 K4H561638D-TCCC

    hy57v281620etp

    Abstract: 35A11 HY57V281620ELT HY57V281620ET
    Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Dec. 2004 1.1 1. Corrected PIN ASSIGNMENT A12 to NC Jan. 2005 1.2 1. Changed IDD3P and IDD3PS 3mA to 5mA


    Original     		PDF 128Mb 16bits -40oC 500uA 128Mbit 8Mx16bit) HY57V281620E 400mil 54pin hy57v281620etp 35A11 HY57V281620ELT HY57V281620ET

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 256Mb D-die x8, x16 DDR SDRAM 256Mb D-die DDR400 SDRAM Specification Revision 1.0 Rev. 1.0 Feb. 2003 DDR SDRAM 256Mb D-die (x8, x16) DDR SDRAM 256Mb D-die Revision History Revison 0.0 (June. 2002) 1. First release Revison 0.1 (Aug. 2002) - Changed IDD3P value from 40mA to 55m


    Original     		PDF 256Mb DDR400 200MHz 400Mbps

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 64Mx8 TS128MLQ64V6J TS128MLQ64V6J 64bits DDR2-667 16pcs 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Placement Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs


    Original     		PDF 240PIN 1024MB 64Mx8 TS128MQR72V5J TS128MQR72V5J 72bits DDR2-533 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed


    Original     		PDF 200PIN 256MB 32Mx16 TS32MSQ64V4M TS32MSQ64V4M 64bits DDR2-400 32Mx16its 200-pin

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 256MB 32Mx16 TS32MMQ64V5M TS32MMQ64V5M 64bits DDR2-533 32Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed


    Original     		PDF 240PIN 512MB 64Mx8 TS64MLQ64V8J TS64MLQ64V8J 64bits DDR2-800 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil


    Original     		PDF 184PIN DDR333 1024MB 64Mx8 TS128MLD64V3J TS128MLD64V3J 64Mx64bits DDR333. 16pcs

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V8J Description Placement The TS128MLQ64V8J is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 64Mx8 TS128MLQ64V8J TS128MLQ64V8J 64bits DDR2-800 16pcs 64Mx8bits 240-pin

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI

    IS43DR81280B

    Abstract: IS46DR16640B IS43DR16640B-25DBL IS46DR16640B-3DBLA IS43DR16640B IS43DR16640B-3DBL
    Text: IS43/46DR81280B/L, IS43/46DR16640B/L PRELMINARY INFORMATION AUGUST 2012 1Gb x8, x16 DDR2 SDRAM FEATURES •               Clock frequency up to 400MHz 8 internal banks for concurrent operation


    Original     		PDF IS43/46DR81280B/L, IS43/46DR16640B/L 400MHz cycles/64 60ball 60-ball IS43DR81280B IS46DR16640B IS43DR16640B-25DBL IS46DR16640B-3DBLA IS43DR16640B IS43DR16640B-3DBL

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		PDF CMS3216LAx-75xx 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH

    Untitled

    Abstract: No abstract text available
    Text: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1


    Original     		PDF CMS4A16LAx 8Mx16) 160ns 350uA 400uA

    W9825G6JH

    Abstract: A-04 w9825g6jh-6l w9825g6jh-6
    Text: W9825G6JH 4 M  4 BANKS  16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF W9825G6JH A-04 w9825g6jh-6l w9825g6jh-6

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M474B5173BH0 M474B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx72

    W9425G6JH

    Abstract: No abstract text available
    Text: W9425G6JH 4 M  4 BANKS  16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W9425G6JH

    Untitled

    Abstract: No abstract text available
    Text: 4GB x72, ECC, DR 240-Pin 1.35V DDR3L VLP RDIMM Features 1.35V DDR3L SDRAM VLP RDIMM MT18KDF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C L) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, very low profile, 18.75mm, registered dual


    Original     		PDF 240-Pin MT18KDF51272PDZ 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef83aa70c0 kdf18c512x72pdz

    Untitled

    Abstract: No abstract text available
    Text: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module


    Original     		PDF 240-Pin MT18JSF1G72PZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef84854d35 jsf18c1gx72pz

    Untitled

    Abstract: No abstract text available
    Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:


    Original     		PDF M2S1G64CBH4B5P M2S2G64CB88B5N M2S4G64CB8HB5N PC3-8500 PC3-10600 PC3-12800 DDR3-1066/1333/1600 128Mx16 256Mx8