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    7N60A Price and Stock

    Vishay Siliconix SIHG47N60AE-GE3

    MOSFET N-CH 600V 43A TO247AC
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    DigiKey SIHG47N60AE-GE3 Tube 3,763 1
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    Vishay Siliconix SIHG47N60AEF-GE3

    MOSFET N-CH 600V 40A TO247AC
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    DigiKey SIHG47N60AEF-GE3 Tube 216 1
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    onsemi HGTG7N60A4

    IGBT 600V 34A 125W TO247
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    DigiKey HGTG7N60A4 Tube 150
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    Win Source Electronics HGTG7N60A4 3,540
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    onsemi HGTP7N60A4

    IGBT 600V 34A TO220-3
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    onsemi HGTP7N60A4D

    IGBT 600V 34A 125W TO220AB
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    7N60A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7N60A Unisonic Technologies 7 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    7N60AL-x-TA3-T Unisonic Technologies 7 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    7N60A-x-TA3-T Unisonic Technologies 7 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    7N60A-x-TF3-T Unisonic Technologies 7 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF

    7N60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A VQW-R502-111

    7N60A

    Abstract: 7N60AL MOSFET 600V 7A
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A 7N60AL QW-R502-111 7N60AL MOSFET 600V 7A

    7n60a

    Abstract: mosfet 600V 7A N-CHANNEL 7N60AL
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A 7N60AL QW-R502-111. mosfet 600V 7A N-CHANNEL 7N60AL

    7N60A

    Abstract: 7N60AL D7N60A 200v 3A ultra fast recovery diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A 7N60AL 7N60AG VQW-R502-111 7N60AL D7N60A 200v 3A ultra fast recovery diode

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A VQW-R502-111

    111C

    Abstract: 7N60AL 7N60A 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A 7N60AL 7N60AG VQW-R502-111 111C 7N60AL 7N60

    7n60b

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L QW-R502-076 7n60b

    7N60B

    Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60G QW-R502-076 7N60B 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60

    7N60A4D

    Abstract: TA49333 TA49331 TA49370 EC 801 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D
    Text: 7N60A4D, 7N60A4D, 7N60A4DS Data Sheet March 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 7N60A4D, 7N60A4D and 7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7N60A4D TA49333 TA49331 TA49370 EC 801 HGT1S7N60A4DS9A HGTG7N60A4D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60L QW-R502-076

    7n60a4

    Abstract: 8508 zener HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 HGTP7N60A4 TA49331
    Text: TM 7N60A4S, 7N60A4S, 7N60A4, 7N60A4 Data Sheet June 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 7N60A4S, 7N60A4S, 7N60A4 and 7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7n60a4 8508 zener HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A TA49331

    7n60a4d

    Abstract: TA49370 TA49331 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D
    Text: 7N60A4D, 7N60A4D, 7N60A4DS TM Data Sheet March 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 7N60A4D, 7N60A4D and 7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7n60a4d TA49370 TA49331 HGT1S7N60A4DS9A HGTG7N60A4D

    7N60a4

    Abstract: HGTG7N60A4 equivalent HGTP7N60A4 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 TA49331
    Text: 7N60A4S, 7N60A4S, 7N60A4, 7N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The 7N60A4S, 7N60A4S, 7N60A4 and 7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7N60a4 HGTG7N60A4 equivalent HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A TA49331

    7N60A4D

    Abstract: TA49370 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D TA49331 7N60A
    Text: 7N60A4D, 7N60A4D, 7N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 7N60A4D, 7N60A4D and 7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7N60A4D TA49370 HGT1S7N60A4DS9A HGTG7N60A4D TA49331 7N60A

    7n60b

    Abstract: tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60G QW-R502-076 7n60b tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Untitled

    Abstract: No abstract text available
    Text: 7N60A4S, 7N60A4, 7N60A4 TM Data Sheet March 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 7N60A4S, 7N60A4 and 7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		PDF HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. TA49331.

    7n60a4

    Abstract: HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26 TA49331
    Text: 7N60A4S9A, 7N60A4 7N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT Features The 7N60A4S9A, 7N60A4 and 7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		PDF HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 HGTG7N60A4 150oC. 100kHz 200kHz 125oC 7n60a4 HGT1S7N60A4S9A HGTP7N60A4 LD26 TA49331

    7n60f

    Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7n60f 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET

    7N60A4

    Abstract: HGTG7N60A4 HGTP7N60A4 TA49331 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A
    Text: 7N60A4S, 7N60A4S, 7N60A4, 7N60A4 Data Sheet June 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 7N60A4S, 7N60A4S, 7N60A4 and 7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7N60A4 TA49331 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A

    7N60

    Abstract: 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7N60 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b

    irf mosfet 12A 600V

    Abstract: MOSFET IRF VDs 600v SSP7N60A IRF 120A IRF 450 MOSFET IRF MOSFET 600v
    Text: S S P 7N60A Advanced Power MOSFET FEATURES B ^ dss - 600 V ^DS on = 1.2 £2 • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 2 5 mA (Max.) @ V DS = 600V


    OCR Scan     		PDF SSP7N60A O-220 T0-220 95MAX 500MIN irf mosfet 12A 600V MOSFET IRF VDs 600v SSP7N60A IRF 120A IRF 450 MOSFET IRF MOSFET 600v

    7N60a4

    Abstract: LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26 transistor st make 803
    Text: 7N60A4S, 7N60A4, 7N60A4 in t e r r ii J a n u a ry . m D ata S h eet File N u m b er i 4826 Features 600V, SMPS Series N-Channel IGBT The 7N60A4S, 7N60A4 and 7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    OCR Scan     		PDF HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 TA49331. 7N60a4 LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A LD26 transistor st make 803

    7n60a4d

    Abstract: TA49331 HGTG*N60A4D TA49333 HGTG7N60A4D TA49370 7N60a4 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTP7N60A4D
    Text: 7N60A4D, 7N60A4D, 7N60A4DS interrii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 7N60A4D, 7N60A4D and 7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS TA49331. TA49370. 7n60a4d TA49331 HGTG*N60A4D TA49333 HGTG7N60A4D TA49370 7N60a4 HGT1S7N60A4DS9A