PM8318
Abstract: G747 PM5309
Text: PM8318 TEMAP 168 W P 622M Interface Aux 6x EC1 C&D ay sd ur Th on rt pe ex n ico sil 04 9: :0 06 05 20 PMON/Alarms ar X C Do wn lo 77MHz Telecom Bus S T S 1 by s P 622M Interface Main OC-12 HO POH LO POH term ad ed W as eli m BLOCK DIAGRAM of • Processes 168 T1s/126 E1s or half of
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PM8318
77MHz
OC-12
T1s/126
STS-12/STM-4.
T1/126
PMC-2031051
PM8318
G747
PM5309
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BB844
Abstract: BCW66 Infineon Technologies Silicon Tuning Diode
Text: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply
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BB844
77MHz
108MHz
BB844
BCW66
Infineon Technologies Silicon Tuning Diode
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77MHZ
Abstract: BB844
Text: BB844 3 Silicon Variable Capacitance Diode Preliminary data For FM radio tuner with extended frequency band 77MHz to 108MHz 2 Designed for application requiring back-to-back diode configuration for optimum signal distortion 1 and detuning VPS05161 High tuning ratio low supply voltage car radio
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BB844
77MHz
108MHz
VPS05161
May-02-2001
BB844
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BB844
Abstract: No abstract text available
Text: BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning High tuning ratio at low supply voltage car radio
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BB844
77MHz
108MHz
15cal
BB844
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BB844
Abstract: No abstract text available
Text: BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning High tuning ratio at low supply voltage car radio
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BB844
77MHz
108MHz
15cal
BB844
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BB844
Abstract: BCW66
Text: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply
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BB844
77MHz
108MHz
BB844
BCW66
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marking SOT23 V 4 diode
Abstract: No abstract text available
Text: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply
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BB844
77MHz
108MHz
marking SOT23 V 4 diode
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TB0820A
Abstract: 77-MHz 280/DCC 280
Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: [email protected] Web: www.taisaw.com IF SAW Filter 138.24MHz BW=77MHz MODEL NO.: TB0820A
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24MHz
77MHz)
TB0820A
-30dB
120nH
50ohm
50ohm
TB0820A
77-MHz
280/DCC 280
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Untitled
Abstract: No abstract text available
Text: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply
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BB844
77MHz
108MHz
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108MHz
Abstract: BB844
Text: BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning High tuning ratio at low supply voltage car radio
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BB844
77MHz
108MHz
Nov-07-2002
108MHz
BB844
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c2 sot23
Abstract: 108MHz BB844 parameter values
Text: BB844 3 Silicon Variable Capacitance Diode Preliminary data For FM radio tuner with extended frequency band 77MHz to 108MHz 2 Designed for application requiring back-to-back diode configuration for optimum signal distortion 1 and detuning VPS05161 High tuning ratio low supply voltage car radio
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BB844
77MHz
108MHz
VPS05161
Jul-26-2001
c2 sot23
108MHz
BB844
parameter values
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Untitled
Abstract: No abstract text available
Text: PM8318 TEMAP 168 W 622M Interface Aux S T S 1 OC-12 HO POH LO POH term Do wn lo ad ed P 622M Interface Main by C P on te n BLOCK DIAGRAM W 77MHz Telecom Bus 6x EC1 C&D X C EC1 Line Section Term Pa rtm in er In co n Fr id ay ,0 1J ul y, 20 05 09 :0 4: 33 • Each T1 transceiver can be
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PM8318
OC-12
77MHz
PMC-2031051
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Untitled
Abstract: No abstract text available
Text: 2.5V, 2GHz ANY DIFF. IN-TO-LVDS Precision Edge SY89872U PROGRAMMABLE CLOCK DIVIDER/FANOUT Final BUFFER WITH INTERNAL TERMINATION FEATURES DESCRIPTION • Guaranteed AC performance over temperature and voltage: • >2GHz FMAX • < 750ps Tpd matched delay between banks
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SY89872U
750ps
200ps
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VCXO 27MHZ
Abstract: PLL500-27 PLL500-27B PLL500-37 PLL500-37BDC PLL500-47 PLL500-47BDC waffle P5003 sc 620 8pin
Text: PLL500-27B/-37B/-47B Low Power CMOS Output VCXO Family 27MHz to 200MHz FEATURES • • • • • • • XIN 1 OE^ 2 VIN 3 GND 4 8 XOUT 7 DS^ 6 VDD* 5 CLK ^: Denotes internal Pull-up DIE PAD LAYOUT 8 1 Die ID: 2 PLL500-27B: C500A0505-05P 3 PLL500-37BDC:
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PLL500-27B/-37B/-47B
27MHz
200MHz)
P500-x7B
200MHz
PLL500-27:
65MHz
PLL500-37:
VCXO 27MHZ
PLL500-27
PLL500-27B
PLL500-37
PLL500-37BDC
PLL500-47
PLL500-47BDC
waffle
P5003
sc 620 8pin
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS6014T1R2NMGGV Features Item Summary 1.2 H(±30%), 4000mA, 2750mA Lifecycle Stage
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NRS6014T1R2NMGGV
4000mA,
2750mA
AEC-Q200
1000pcs
100kHz
4000mA
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1189B
Abstract: OPA641 OPA641H OPA641HSQ OPA641P OPA641U centrifuge 1x08
Text: OPA641 Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● GAIN-BANDWIDTH: 1.6GHz ● STABLE IN GAINS ≥ 2 ● COMMUNICATIONS ● MEDICAL IMAGING ● TEST EQUIPMENT ● CCD IMAGING ● LOW DIFFERENTIAL GAIN/PHASE ERRORS: 0.015%/0.006°
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OPA641
12-BIT
72dBc
10MHz
OPA641
2N5911
1189B
OPA641H
OPA641HSQ
OPA641P
OPA641U
centrifuge
1x08
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Untitled
Abstract: No abstract text available
Text: 6000 Family Architectural Description available as dedicated device outputs. These signals are also available as inputs to the GRP to facilitate use by onchip logic. ispLSI 6000 Family Introduction The ispLSI 6192 is a high-density, Cell-Based programmable logic device containing a dedicated Memory
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8000-gate
6192SM
208-pin
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LM120 model SPICE
Abstract: crystal Oscillator AGC MOTOROLA ECL DS26C32 SO space qualified synthesizer mil national semiconductor cmos databook LP2953* spice 0.35 micron amps MODEL PARAMETERS SPICE CLC409 CLC520
Text: VOLUME NO. 12 1997 Wireless Secure Communications M ilitary tactical and satellite networks and radios are tasked with handling ever greater amounts of data and voice traffic – often over existing channels. As advanced modulation techniques, coding, compression, and encryption techniques are developed,
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LM120
LM136
LM137
LM140
LM185
LM2940
LM2941
LM2990
LM2991
LM3940
LM120 model SPICE
crystal Oscillator AGC
MOTOROLA ECL
DS26C32 SO
space qualified synthesizer mil
national semiconductor cmos databook
LP2953* spice
0.35 micron amps MODEL PARAMETERS SPICE
CLC409
CLC520
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OPA628AP
Abstract: OPA620 OPA628 OPA628AU
Text: OPA628 OPA 628 OPA 628 Low Distortion Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● EXCELLENT DIFFERENTIAL GAIN: 0.015% EXCELLENT DIFFERENTIAL PHASE: 0.015° LOW DISTORTION: 90dB SFDR TWO-TONE THIRD-ORDER INTERCEPT:
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OPA628
60dBm
160MHz
30MHz
OPA628
ADC614
12-Bit,
10MHz
OPA628AP
OPA620
OPA628AU
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RA07M0608M-101
Abstract: RA07M0608M Pin-30mW RA07M0608
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to
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RA07M0608M
66-88MHz
RA07M0608M
88-MHz
RA07M0608M-101
Pin-30mW
RA07M0608
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Untitled
Abstract: No abstract text available
Text: IBM IBM0316809C Advance 2M x 8 Synchronous DRAM Features Programmable Burst Lengths: 1,2,4,8,full-page • High Performance: CA S latency = 3 -10 C lock Frequency -11 -12 -13 <100M Hz <91 MHz <83MHz <77MHz C lock Cycle 10ns 11ns 12ns 13ns A ccess Tim e from the Clock
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IBM0316809C
TSOP-44
400mil)
83MHz
77MHz
cycles/64ms
IBM0316809C
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Untitled
Abstract: No abstract text available
Text: IBM0316409C Advance 4M x 4 Synchronous DRAM Features Programmable Burst Lengths: 1,2,4,8,full-page • High Performance: CAS latency = 3 -10 C lock Frequency -11 -12 -13 Burst Read/Write Modes with Sequential and Interleave Addresses <100M Hz <91 MHz <83MHz <77MHz
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IBM0316409C
TSOP-44
400mil)
83MHz
77MHz
cycles/64ms
2048x1024x4
A8A9A10A11
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74hc74a
Abstract: plj1 TC74HC74
Text: - TC74HC74AP/AF/AFN D U A L D - T Y P E F L I P FLOP PRESET A N D C L EA R T h e T C 74H C 74A is a h ig h spe ed CM O S D F L I P F L O P f a b r i c a t e d w i t h s i l i c o n g a t e C 2M O S t e c h n o l o g y . I t a c h i e v e s t h e h i g h s p e e d o p e r a t i o n s i m i l a r to
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TC74HC74AP/AF/AFN
74hc74a
plj1
TC74HC74
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74hc74a
Abstract: IC 74LS74
Text: - TC74HC74AP/AF/AFN DUA L D - T Y P E FLIP FLOP PRESET AND CLEAR T h e TC 74H C 74A is a h ig h sp e e d C M O S D F L I P F L O P fa b ric a te d w ith silic o n g a te C2M OS te c h n o lo g y . It a ch iev e s th e h ig h sp eed o p e ra tio n s i m i l a r to
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TC74HC74AP/AF/AFN
HC-195
HC-196
74hc74a
IC 74LS74
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