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    764MHZ Datasheets Context Search

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    RA45H7687M1

    Abstract: RA45H8994M1 AN-900-027-B
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-027-B Date : 10th May. 2007 Rev. date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1


    Original     		PDF AN-900-027-B RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz RA45H7687M1 AN-900-027-B

    RA20H8087M

    Abstract: RF MOSFET MODULE RA20H8087M-101 F8068
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to


    Original     		PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz RF MOSFET MODULE RA20H8087M-101 F8068

    341V

    Abstract: RA45H7687M1 22an VGG13
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-026-A Date : 21st Feb. 2007 Rev.date : 7thJan. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control


    Original     		PDF AN-900-026-A RA45H7687M1 RA45H7687M1, RA45H7687M1 806MHz 20dBm 341V 22an VGG13

    TB203

    Abstract: LP801
    Text: Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=0.5A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm 5 470 490 510 530 550 570 590 610 630 650 670 690 710 730 750 770 Freq in MHz Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=1A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm


    Original     		PDF TB203 LP801 28Vdc 17dBm

    RA20H8087M

    Abstract: RA20H8087M-01 RA20H8087M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz


    Original     		PDF RA20H8087M 851-870MHz RA20H8087M 20-watt 870-MHz becom-2-2833-9793 RA20H8087M-01 RA20H8087M-E01

    DEA202450BT-1261A2

    Abstract: DEA202450BT-2038A1 DEA202450BT-1213C1 DEA202450BT-1283A2 DEA202441BT-2106A2 DEA202450BT-1275A1 DEA202450BT-3201B2 3717d
    Text: Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth DEA Series Type: DEA202450BT-1261A2 2.0x1.25×0.55mm DEA202441BT-2106A2 (2.0×1.25×0.7mm max.) DEA202450BT-3201B2 (2.0×1.25×0.8mm max.) DEA202450BT-1213C1 (2.0×1.25×0.95mm) DEA202450BT-1275A1 (2.0×1.25×0.95mm)


    Original     		PDF DEA202450BT-1261A2 DEA202441BT-2106A2 DEA202450BT-3201B2 DEA202450BT-1213C1 DEA202450BT-1275A1 DEA202450BT-2038A1 DEA202450BT-1283A2 2002/95/EC, 1600MHz 3200MHz DEA202450BT-1261A2 DEA202450BT-2038A1 DEA202450BT-1213C1 DEA202450BT-1283A2 DEA202441BT-2106A2 DEA202450BT-1275A1 DEA202450BT-3201B2 3717d

    RA45H7687M1

    Abstract: mitsubishi rf sirf 1v GG13
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-900-026 Date : 21st Feb. 2007 Prepared : K. Mori Confirmed : S. Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Recommendation of the output power control for RA45H7687M1


    Original     		PDF AN-900-026 RA45H7687M1 RA45H7687M1, RA45H7687M1 20dBm AN-900-026 806MHz mitsubishi rf sirf 1v GG13

    RA20H8087M

    Abstract: RA20H8087M-01 20W power transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to


    Original     		PDF RA20H8087M 851-870MHz RA20H8087M 20-watt 870-MHz RA20H8087M-01 20W power transistor

    3717d

    Abstract: DEA202450BT-1283A2 DEA202450BT DEA202450BT-1261A2 092dB DEA202450BT-2038A1
    Text: Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth DEA Series Type: DEA202450BT-1261A2 2.0x1.25×0.55mm DEA202441BT-2106A2 (2.0×1.25×0.7mm max.) DEA202450BT-3201B2 (2.0×1.25×0.8mm max.) DEA202450BT-1213C1 (2.0×1.25×0.95mm) DEA202450BT-1275A1 (2.0×1.25×0.95mm)


    Original     		PDF DEA202450BT-1261A2 DEA202441BT-2106A2 DEA202450BT-3201B2 DEA202450BT-1213C1 DEA202450BT-1275A1 DEA202450BT-2038A1 DEA202450BT-1283A2 2002/95/EC, 2400MHz 2450MHz 3717d DEA202450BT-1283A2 DEA202450BT DEA202450BT-1261A2 092dB DEA202450BT-2038A1

    TB204

    Abstract: LP802
    Text: TB204 24V Performance TB204 LP802 Vds=24V Idq=0.5A Freq MHz Pin (mW) Pout (mW) 470 4.2 100 490 3.9 100 510 3.5 100 Flatness +/0.40 dB 530 550 570 Flatness +/- 3.4 3.4 3.5 0.06 dB 100 100 100 590 610 630 Flatness +/- 3.6 4 4 0.23 dB 100 100 100 650 670 690


    Original     		PDF TB204 LP802 470MHz 476MHz 100mW 198mW 400mW LP802

    RA20H8087M

    Abstract: RA20H8087M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to


    Original     		PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz RA20H8087M-101

    1559MHz

    Abstract: 0943D DEA252450BT-2080B 5104db 544db
    Text: Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth DEA Series Type: DEA252450BT-2080B2 2.5x2.0×0.9mm DEA252450BT-2024C2 (2.5×2.0×0.9mm) DEA252450BT-2024C5 (2.5×2.0×1.0mm max.) DEA252400BT-2030A1 (2.5×2.0×1.0mm max.) DEA252450BT-2024D4 (2.5×2.0×1.0mm max.)


    Original     		PDF DEA252450BT-2080B2 DEA252450BT-2024C2 DEA252450BT-2024C5 DEA252400BT-2030A1 DEA252450BT-2024D4 DEA252450BT-2027A1 DEA252450BT-2031A1 DEA252450BT-2063C1 DEA252450BT-2109C3 DEA252450BT-2037C1 1559MHz 0943D DEA252450BT-2080B 5104db 544db

    BAND PASS FILTER

    Abstract: RFBPF
    Text: Approval sheet RFBPF Series – 2012 0805 - RoHS Compliance MULTILAYER CERAMIC BAND PASS FILTER Halogens Free Product 2.4 GHz ISM Band Working Frequency P/N: RFBPF2012040AHT *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_RFBPF2012040AHT_V04


    Original     		PDF RFBPF2012040AHT RFBPF2012040AHT 11b/g/n, BAND PASS FILTER RFBPF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz

    transistor j326

    Abstract: PD84010-E a05t DB-84010-860 EXCELDRC35C GRM42-6 102J EEVHB1V100P
    Text: DB-84010-860 Evaluation board using PD84010-E for 900 MHz 2-way radio Features • Excellent thermal stability ■ Frequency: 760 - 860 MHz ■ Supply voltage: 7.2 V ■ Output power: 8 W ■ Power gain: 11.3 ± 0.3 dB ■ Efficiency: 53 % - 58 % ■ Load mismatch 20:1


    Original     		PDF DB-84010-860 PD84010-E DB-84010-860 transistor j326 a05t EXCELDRC35C GRM42-6 102J EEVHB1V100P

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range.


    Original     		PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz

    RA20H8087M

    Abstract: RA20H8087M-101 20W power transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to


    Original     		PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz RA20H8087M-101 20W power transistor

    RA45H7687M1

    Abstract: No abstract text available
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-026-B Date : 21st Feb. 2007 Rev.date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control


    Original     		PDF AN-900-026-B RA45H7687M1 RA45H7687M1, RA45H7687M1 20dBm 806MHz

    RA45H7687M1

    Abstract: RA45H7687M1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to


    Original     		PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101

    ta1294

    Abstract: No abstract text available
    Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 915.0MHz Part No: MP03642 Model: TA1294A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V


    Original     		PDF MP03642 10dBm 928MHz) 702MHz 764MHz 846MHz 1010MHz ta1294

    RA45H7687M1

    Abstract: RA45H8994M1 PIN3D mitsubishi Lot No
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027-A Date : 10th May. 2007 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1


    Original     		PDF AN-900-027-A RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz RA45H7687M1 PIN3D mitsubishi Lot No

    Untitled

    Abstract: No abstract text available
    Text: 1/2 Multilayer Chip Band Pass Filters For 2.4GHz W-LAN/Bluetooth Conformity to RoHS Directive DEA Series DEA202450BT-2135E2 SHAPES AND DIMENSIONS RECOMMENDED PC BOARD PATTERNS 2.6 0.95±0.05 2.0±0.15 1.7 0.55 1.5 0.35 2 1.6±0.15 0.25±0.20 Terminal functions


    Original     		PDF DEA202450BT-2135E2 108MHz] 240MHz] 698MHz] 764MHz] 794MHz] 849MHdB 960MHz 2110MHz 2170MHz

    Untitled

    Abstract: No abstract text available
    Text: 1/2 Multilayer Chip Band Pass Filters For Bluetooth & 2.4GHz W-LAN Conformity to RoHS Directive DEA Series DEA202441BT-2106A2 SHAPES AND DIMENSIONS 0.35 0.75 0.25±0.2 Terminal functions 1 IN 2 OUT 3 GND 4 GND 1.85 3 1.6±0.15 1.5 0.25±0.2 2 2.6 1.7 1.25±0.15


    Original     		PDF DEA202441BT-2106A2 110GHz 170GHz 800GHz 960GHz 200GHz 4505GHz 400GHz 450GHz 484GHz

    mitsubishi Lot No

    Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL:


    Original     		PDF AN-900-027 RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz mitsubishi Lot No AN-900-027 RA45H7687M1 MITSUBISHI APPLICATION NOTE RF POWER