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Micro Commercial Components MCTK075N60FH-TP N-CHANNEL MOSFET,TOLL-8L-KS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCTK075N60FH-TP	Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $2.475	Buy Now
	MCTK075N60FH-TP	Digi-Reel	4,000		1	1 $6.36 10 $4.198 100 $2.9989 1000 $2.475 10000 $2.475	Buy Now
	MCTK075N60FH-TP	Cut Tape	4,000		1	1 $6.36 10 $4.198 100 $2.9989 1000 $2.475 10000 $2.475	Buy Now
Vishay Siliconix SIHK075N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHK075N60E-T1-GE3	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $3.29383	Buy Now
	SIHK075N60E-T1-GE3	Cut Tape	25		1	1 $7.84 10 $5.321 100 $5.321 1000 $5.321 10000 $5.321	Buy Now
Vishay Siliconix SIHK075N60EF-T1GE3 E SERIES POWER MOSFET WITH FAST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHK075N60EF-T1GE3	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $3.84436	Buy Now
IXYS Corporation IXKN75N60C MOSFET N-CH 600V 75A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKN75N60C	Tube	703		1	1 $68.18 10 $52.498 100 $68.18 1000 $68.18 10000 $68.18	Buy Now
Mouser Electronics	IXKN75N60C		140			1 $62.17 10 $52.1 100 $52.09 1000 $52.09 10000 $52.09	Buy Now
TME	IXKN75N60C		10		1	1 $69.81 10 $59.3 100 $59.3 1000 $59.3 10000 $59.3	Buy Now
STMicroelectronics STW75N60M6-4 MOSFET N-CH 600V 72A TO247-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STW75N60M6-4	Tube	531		1	1 $12.54 10 $8.738 100 $12.54 1000 $6.18375 10000 $6.18375	Buy Now
Avnet Americas	STW75N60M6-4	Tube		16 Weeks	600	1 - 10 - 100 - 1000 $6.18375 10000 $5.82	Buy Now
Newark	STW75N60M6-4	Bulk			1	1 $9.14 10 $9.14 100 $9.14 1000 $9.14 10000 $9.14	Buy Now
TME	STW75N60M6-4				1	1 $13.77 10 $12.41 100 $9.81 1000 $8.91 10000 $8.91	Get Quote
Avnet Silica	STW75N60M6-4			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STW75N60M6-4			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 75N60 price and stock on Findchips.com

75N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SOT-227 heatsink Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions Text: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90	Original	PDF	75N60C OT-227 E72873 SOT-227 heatsink 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
75N60C Abstract: No abstract text available Text: IXKN 75N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A 36 mΩ Ω D G S S miniBLOC, SOT-227 B MOSFET S Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C	Original	PDF	75N60C OT-227 75N60C
Untitled Abstract: No abstract text available Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source	Original	PDF	75N60C OT-227 20100609c
75n60 Abstract: 1/igbt 75n60 Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60 VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B	Original	PDF	75N60 OT-227 E72873 75n60 1/igbt 75n60
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT with Diode IXGB 75N60BD1 VCES IC25 VCE sat tfi Maximum Ratings PLUS 264 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	75N60BD1
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL DATA IXGL 75N60BU1 VCES IC25 VCE sat tfi HiPerFASTTM IGBT with Diode ISOPLUS-264TM (Electrically Isolated) Mounting Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	PDF	ISOPLUS-264TM 75N60BU1 728B1
20n60c Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c Text: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:	Original	PDF	20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
75n60 Abstract: 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c Text: CoolMOS Power MOSFET Contents VDSS max V ID25 TC = 25 °C A RDS on 600 40 70 40 70 75 35 ISOPLUS247TM miniBLOC Page mΩ Ω IXKN 40N60C C5-2 IXKR 40N60 IXKN 75N60 C5-4 C5-6 CoolMOS is a trademark ofInfineon Technologies AG. 2000 IXYS All rights reserved	Original	PDF	ISOPLUS247TM 40N60C 40N60 75N60 OT-227 E72873 75n60 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c
"SOT-227 B" dimensions Abstract: 75N60 sot-227 Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S	Original	PDF	75N60C OT-227 E72873 "SOT-227 B" dimensions 75N60 sot-227
75n60 Abstract: M4x8 UPS SIEMENS C160 ID100 Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source	Original	PDF	75N60C OT-227 20100609c 75n60 M4x8 UPS SIEMENS C160 ID100
IXKN75N60C Abstract: 75n60 E72873 Text: CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Preliminary miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S VGS ID25 ID90 dv/dt	Original	PDF	75N60C OT-227 E72873 IXKN75N60C IXKN75N60C 75n60 E72873
75n60 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT with Diode Symbol Test Conditions IXGB 75N60BD1 VCES IC25 VCE sat tfi Maximum Ratings PLUS 264 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	75N60BD1 75n60
75N60C Abstract: 75n60 IXKN75N60C UPS SIEMENS C160 SOT-227 heatsink Text: IXKN 75N60C CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on) 600 V 75 A 36 mΩ Ω miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source	Original	PDF	75N60C OT-227 20080523a 75N60C 75n60 IXKN75N60C UPS SIEMENS C160 SOT-227 heatsink
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original	PDF

75n60 Abstract: No abstract text available Text: 75N60FL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.	Original	PDF	NGTB75N60FL2WG NGTB75N60FL2W/D 75n60
TC1724 Abstract: tle 8760 GDI injector driver TDA 7368 tda 7718 TC1793 50010-1TAA1 dc-dc converter 50kW 100kW tc1782 TC1784 Text: Driving the Future of Automotive Electronics Automotive System Solutions [ www.infineon.com/automotive ] 2 Contents Challenges and Trends 04 Safety-Aware System Solutions 06 Body System Solutions 18 Powertrain System Solutions 32 H EV System Solutions	Original	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	PDF	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	PDF	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
100N055 Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain	OCR Scan	PDF	02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D

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75N60 Search Results

75N60 Price and Stock

Micro Commercial Components MCTK075N60FH-TP

Vishay Siliconix SIHK075N60E-T1-GE3

Vishay Siliconix SIHK075N60EF-T1GE3

IXYS Corporation IXKN75N60C

STMicroelectronics STW75N60M6-4

75N60 Datasheets Context Search

SOT-227 heatsink

75N60C

Untitled

75n60

Untitled

Untitled

20n60c

75n60

"SOT-227 B" dimensions

75n60

IXKN75N60C

75n60

75N60C

igbt welding machine scheme

75n60

TC1724

7N60B equivalent

PEF 24628

BCM 4336

100N055