BSS65
Abstract: BSS65R
Text: PLXSSEY SEMICOND/DISCRETE 03 PNP silicon planar high speed switching transistor DE I 722DS33 ODOLbSH 4 BSS65 , T - 3 7 -// A B S O L U T E M A X I M U M R A T IN G S Param eter Sy m b o l BSS65 U nit V CBO -1 2 V C o lle cto r-E m itte r V o lta g e V CEO
|
OCR Scan
|
PDF
|
722DS33
BSS65
BSS65
722GS33
BSS65R
BSS65R
|
BPX25
Abstract: No abstract text available
Text: PLESSEY SEMICO ND/DISCRETE 7220533 P L E S S E Y IS SEMICOND I E|722DS33 QQQSQ1S S /DISCRETE 95D 05015 SILICON PLANAR PHOTOTRANSISTORS G E N E R A L A P P L IC A T IO N S OF F ERRAN TI P H O T O T R A N SIST O R S Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape
|
OCR Scan
|
PDF
|
722DS33
ZM100
ZM100/110,
BPX25/29)
ZM110
BPX25
BPX29
ZMP31/51)
ZMP31
|
G199
Abstract: ferranti 199 G198
Text: PLESSEY S E MI CO ND / D I SC R E T E TS 7220533 PLESSEY SEMICOND/DISCRETE p Ë l? a S D S 3 3 95D 05695 ^ 3 *7 -0 ? ' Z V N 2535 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
|
OCR Scan
|
PDF
|
ZVN2535A
75S0533
G-200
G-201
752DS33
0D0570D
G-202
G-203
722DS33
000S7D2
G199
ferranti 199
G198
|
ZVN2206B
Abstract: E195D plessey g-1
Text: PLESSEY SE MICON D/ DI SC RE TE 7220533 PLESSEY TS DE I 7S E 0 S 33 DDGSbb^ 95D 05 6 6 9 SEMICOND/DISCRETE - [“ ^ N-channel enhancement mode vertical DMOS FET 3 ^ 7 ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
|
OCR Scan
|
PDF
|
ZVN2206
ZVN2206B*
ZVN2206L
DQ0Sb72
G-174
7S2D533
0005b73
G-175
ZVN2206B
E195D
plessey g-1
|
G-329
Abstract: ZVP3306 ZVP3306A
Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE ZVP2220 DE I 75EDS33 ODOSflEE 1 9SD 05822 T '3 7 \ 2 5 G-324 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE G-325 d F | 7S2[]S33 QOaSflES □ |~~ 95D 05 823 D PLESSEY SEMICOND/DISCRETE
|
OCR Scan
|
PDF
|
75EDS33
ZVP2220
G-324
G-325
7EE0533
G-326
7220S33
-r-31-25'
ZVP3306
G-329
ZVP3306
ZVP3306A
|
ZVP2110L
Abstract: ZVP2110 g291
Text: T5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY T • C o m p a c t ge om etry • F a s t s w itc h in g sp e e d s • N o s e c o n d a ry b re a k d o w n • E x ce lle n t te m p e ratu re sta b ility • H igh in p u t im p e d a n ce • L o w cu rren t drive
|
OCR Scan
|
PDF
|
ZVP2110
G-290
722DS33
G-291
G-292
G-293
ZVP2110L
ZVP2110
g291
|
G227
Abstract: g228
Text: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY ~TS DE~| 7EE0S3B □ 0 D S 7 n S 95D SEMICOND/DISCRETE 05719 T-39-11 N-channel enhancement mode vertical DMOS FET ZVN3220 FEATURES • C o m p a c t g e o m etry • F a s t s w itc h in g sp e e d s • N o se c o n d a ry b re akd o w n
|
OCR Scan
|
PDF
|
T-39-11
ZVN3220
ZVN3220L
-----------------------------T-39-11
5/ZVN3220L/09/66
00DS724
G-226
G227
g228
|
N-0120
Abstract: N0120
Text: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE DE 1 7 5 2 D 5 3 3 D D D S t m 95D 0 5 6 0 9 T - 3 ^ .^ 5 - N-channel enhancement mode vertical D M O S FET ZVN 0120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown
|
OCR Scan
|
PDF
|
G-115
722DS33
00G5bl4
G-116
75EG533
G-117
7220S33
G-118
N-0120
N0120
|