DSAFRZWS
Abstract: No abstract text available
Text: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711DfiSh
BUK436-800A/B
BUK436
-800A
-800B
DSAFRZWS
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philips ID 35
Abstract: BUK436-800A
Text: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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OCR Scan
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PDF
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711Qfl2b
BUK436-800A/B
BUK436
-800A
-800B
philips ID 35
BUK436-800A
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PAL AM 16v8
Abstract: gal 16v8 programming specification 4A-FE 16V8 P3Q16V8-7A u106
Text: PHILIPS INTERNATIONAL b SE 711DfiSh G O b l T ì b T> T 74 « P H I N Philips Semiconductor« Low Voltage Products Preliminary specification 3 Volt BiCMOS Versatile GAL-type PLD DESCRIPTION FEATURES The P3Q16V8-7 is a V-type GAL device designed to operate over the 3.0 to 3.6 volt
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711DfiSh
P3Q16V8â
P3Q16V8-7
100mA
20-Pin
0408B
P3Q16V8-7A
0400E
PAL AM 16v8
gal 16v8 programming specification
4A-FE
16V8
u106
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74F1763
Abstract: 74F1764 AN218 F1763 N74F1763A N74F1763N fast page mode dram controller U-33-H RL-7012 RL700
Text: PHILIPS INTERNATIONAL Philips Semiconductors-Slgnetics Document No. 853-1406 ECN No. 98150 Date of issue November 17,1989 Status Product Specification' FAST Products SflE D • FAST 74F1763 Intelligent DRAM Controller D C TYPE FEATURES • DRAM signal timing generator
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711062b
QG52bDl
74F1764
32blt
711DflEb
00S2b07
74F1763
500ns
74F1763
AN218
F1763
N74F1763A
N74F1763N
fast page mode dram controller
U-33-H
RL-7012
RL700
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