philips zener diode c24
Abstract: SOD-18 philips bzx70 zener diode c43 BZX70 philips zener diode c12 BZX70-C7V5 DIODE BZX70 BZX70-C75 c22 zener philips 43c56
Text: BZX70 SERIES MAINTENANCE TYPE P H IL IP S J ib E _ p INTERNATIONAL • 711D6Sb 0 am b 7 b ^ h37 M P H I N T - O h l3 REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended for use as voltage regulator and transi ent suppressor diodes in medium power regulators and transient suppression circuits.
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BZX70
711D6Sb
BZX70-C7V5
BZX70-C75.
OD-18.
philips zener diode c24
SOD-18
philips bzx70 zener diode c43
philips zener diode c12
DIODE BZX70
BZX70-C75
c22 zener philips
43c56
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BUK436-60A
Abstract: 134 T31 100-P BUK436-60B
Text: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in
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711D6Sb
BUK436-60A/B
BUK436
drai11062b
BUK436-60A
134 T31
100-P
BUK436-60B
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B37 zener diode
Abstract: SOD-18 BZX70 philips zener diode c24 b37 zener philips bzx70 zener diode c43 DIODE BZX70 philips zener diode BZX70-C75 philips zener diode c18
Text: BZX70 SERIES M A IN TEN A N C E TYPE JiJaE_] PH IL IP S INTERNATIONAL • 711D6Sb QG41b7b b37 M P H I N REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended fo r use as voltage regulator and transi ent suppressor diodes in medium power regulators and transient suppression circuits.
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BZX70
711065b
QG41b7b
BZX70-C7V5
BZX70-C75.
OD-18.
B37 zener diode
SOD-18
philips zener diode c24
b37 zener
philips bzx70 zener diode c43
DIODE BZX70
philips zener diode
BZX70-C75
philips zener diode c18
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hall 506
Abstract: IEC134 SSOP28 TDA8762 DC AC SINE WAVE CONVERTER
Text: INTEGRATED CIRCUITS IM M i ^ i i T TDA8762 10-bit high-speed low-power analog-to-digital converter Preliminary specification File under Integrated Circuits, IC02 1995 Feb 15 Philips Semiconductors PHILIPS PH ILIPS 711D6Sb 006714^ 14D Philips Semiconductors
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TDA8762
10-bit
711062b
00671bb
hall 506
IEC134
SSOP28
TDA8762
DC AC SINE WAVE CONVERTER
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BUK436-60A
Abstract: MC 151 transistor 100-P BUK436-60B
Text: PHILIPS INTERNA TION AL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in
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711D6Sb
BUK436-60A/B
BUK436
711062b
00b3fi
BUK436-60A
MC 151 transistor
100-P
BUK436-60B
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BUK445
Abstract: BUK445-200A BUK445-200B m 713
Text: bSE T> PHILIPS INTERNATIONAL m 711D6Sb OObBSTb flS^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711D6Sb
BUK445-200A/B
-SOT186
BUK445
-200A
-200B
BUK445-200A
BUK445-200B
m 713
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diode t62
Abstract: No abstract text available
Text: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,
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BDT62
BDT62B;
7110fl2b
0043S3Ö
BDT63C
BDT62;
7110flat
diode t62
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PCF8524
Abstract: PCF8524P 512 x 8-bit cmos eeprom
Text: Preliminary specification Philips Semiconductors 512 X 8-bit CMOS EEPROM with l2C-bus interface PCF8524 CONTENTS 12 SOLDERING Introduction Soldering by dipping or by wave Repairing soldered joints 1 FEATURES 2 APPLICATIONS 12.1 12.2 12.3 3 GENERAL DESCRIPTION
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PCF8524
7110flEb
PCF8524
PCF8524P
512 x 8-bit cmos eeprom
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Rtz qe
Abstract: bt dp01 84C440 PWM32 PWM42 84C640 84C844 op07 oscillator PCA84C641 84C443
Text: Philips Semiconductors Product specification 8-bit microcontrollers with O S D and V S T o a i ^ a a w o ^ o v iv 84C 44X ; 84C 64X; 84C 84X 1 . FEATURES 2. GENERAL DESCRIPTION 1.1 84CXXX kernel The 84C440, 84C441, 84C443, 84C444, 84C640, 84C 641, 84C643, 84C644, 84C840, 84C 841, 84C843
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84CXXX
42-lead
84C44X;
84C64X;
84C84X
MCD431
711G62b
Rtz qe
bt dp01
84C440
PWM32
PWM42
84C640
84C844
op07 oscillator
PCA84C641
84C443
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LQFP48
Abstract: SAA7196 TDA8758 TDA8758G 2SIP100 CIE13
Text: Product specification Philips Semiconductors YC 8-bit low-power analog-to-digital video interface TDA8758 FEATURES APPLICATIONS • Two 8-bit ADCs: • Video signal decoding - one Luminance or CVBS channel • Digital picture processing - one Chrominance channel
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7110fl2b
LQFP48
SAA7196
TDA8758
TDA8758G
2SIP100
CIE13
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8a04
Abstract: Dtm725 8503 intel 8205 C100 DCS1900 LQFP80 P90CL301 P90CL301AFH L3BT
Text: Philips Semiconductors Product specification Low voltage 16-bit microcontroller CONTENTS P90CL301 13 PULSE WIDTH MODULATION OUTPUTS PWM 1 FEATURES 2 DESCRIPTION 13.1 13.2 Prescaler PWM Register (PWMP) PWM Data Registers (PWMO and PWM1) 2.1 Note on supply voltage
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16-bit
P90CL301
8a04
Dtm725
8503
intel 8205
C100
DCS1900
LQFP80
P90CL301
P90CL301AFH
L3BT
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ir transmitter and receiver
Abstract: diagram remote control receiver and transmitter am transmitter and receiver circuit diagram 44-PIN GDIP1-T28
Text: P hilips Sem iconductors M ilita ry Data C om m unications P roducts P ro d u ct specifica tio n Dual asynchronous receiver/transmitter DUART • FEATURES • Start-end break interrupt/status • Dual full-duplex asynchronous receiver/transmitters • Detects break which originates in the
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1/16-bit
711002b
711Gfi2b
ir transmitter and receiver
diagram remote control receiver and transmitter
am transmitter and receiver circuit diagram
44-PIN
GDIP1-T28
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philips 4322 191
Abstract: SAA2002 SAA2002GP SAA2012
Text: Philips Semiconductors Product specification Stereo filter and codec SAA2002 FEATURES • Stereo filtering and codec functions in a single chip • Drive processing interface • Filtered data interface COMPACT CASSETTE • Baseband audio data interface • LT interface to microcontroller
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SAA2002
SAA2002
SAA2012)
FS256
00AD3b0
philips 4322 191
SAA2002GP
SAA2012
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transistor 431 N
Abstract: TRANSISTOR D 471 BFW92 BFW92A philips bfw92
Text: Product specification Philips Semiconductors '7 ^ 3 / - / 7 NPN 3 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • ^ BFW92A ?110fl2b D D M L D 3 2 47b ■ PHIN PINNING NPN transistor in a plastic SOT37 envelope. PIN It is primarily intended for use in
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BFW92A
110fl2b
DDMLD32
BFW92A
BFW92
BFW92A/02
transistor 431 N
TRANSISTOR D 471
philips bfw92
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54ABT244
Abstract: No abstract text available
Text: Philips Semiconductors Military Advanced BiCMOS Products Product specification Octal buffer/line driver 3-State 54ABT244 FEATURES DESCRIPTION • Octal bus interlace The 54ABT244 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high
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54ABT244
48mA/-24mA
500mA
54ABT244
54ABT
500ns
711G62b
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TDA9814T
Abstract: S028 sine wave generator using ic 555 002 542 03 19 SIEMENS 12 V
Text: Philips Semiconductors Preliminary specification Multistandard VIF-PLL with QSS-IF and dual FM-PLL7AM demodulator TDA9814T FEATURES GENERAL DESCRIPTION • 5 V supply voltage The TDA9814T is an integrated circuit for multistandard vision IF signal processing and sound AM and dual FM
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711Dfl2b
TDA9814T
S028
sine wave generator using ic 555
002 542 03 19 SIEMENS 12 V
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transistor 1264-1
Abstract: PHm 0440 transistor npn d 2058 BFG90A BFG90 phm 0048 phm 0031 ami 981 FP 801 UCD074
Text: Philips S em iconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ' SbE D • / g BFG90A 711Dfi2b □□45111 735 ■ PHIN PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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OT103
BFG90A
711002b
OT103.
transistor 1264-1
PHm 0440
transistor npn d 2058
BFG90A
BFG90
phm 0048
phm 0031
ami 981
FP 801
UCD074
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44-PIN
Abstract: GDIP1-T28
Text: P hilips Sem iconductors M ilita ry Data C om m unications P roducts P ro d u ct specifica tio n Dual asynchronous receiver/transmitter DUART • FEATURES • Start-end break interrupt/status • Dual full-duplex asynchronous receiver/transmitters • Detects break which originates in the
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1/16-bit
711002b
711Gfi2b
44-PIN
GDIP1-T28
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SI 18751
Abstract: DIP28 LQFP32 MAB8048 PCD3359A PCD33XXA S028
Text: Philips Semiconductors Product specification 8-bit microcontrollers with DTMF generator, 8 kbytes OTP and 128 bytes EEPROM CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description
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PCD3756X
SI 18751
DIP28
LQFP32
MAB8048
PCD3359A
PCD33XXA
S028
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OM976
Abstract: philips hybrid OM976 OM976/1 philips 683 series BP317 20162-MILANO final de carrera MO-011
Text: Philips Semiconductors Preliminary specification Video output amplifier OM976/1 PINNING FEATURES • DC coupled video amplifier for cathode drive, with a positive-going video input. 1 input • Low internal thermal resistance 2 ground • A single fixed supply voltage and
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OM976/1
OM976/1
SCD24
OM976
philips hybrid OM976
philips 683 series
BP317
20162-MILANO
final de carrera
MO-011
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m2131
Abstract: BYV92 100 BYV92 BYV92-300 BYV92-500U T0319 M2132 350AT m2136
Text: BYV92 SERIES M A IN T E N A N C E T Y P E LIPS INTERNATIONAL SbE D • J V 711Dâ2b □□414bb S2b ■ P H I N T - O Z - l l ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low
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BYV92
BYV92-300
f-10au
T-03-19
711002b
Q0mM73
M2135
M2136
m2131
BYV92 100
BYV92-500U
T0319
M2132
350AT
m2136
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4046 application note philips
Abstract: transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134
Text: Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL LEE1015TA 7 iio a 2 b SbE oa4bnG t5t « p h i n DESCRIPTION APPLICATIO N S Diffused emitter ballasting resistors providing excellent
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OT122
LEE1015TA
711002b
004tnG
OT122
T-33-05
LEE1015TA
711Qfl2b
4046 application note philips
transistor 6822
TRANSISTOR NPN 6822
41413
transistor d 1556
1FT sot23-6
805 399-4
International Power Sources
marking 683 choke
IEC134
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BUK617-500AE
Abstract: TRANSISTOR C 557 B TIC 136 Transistor
Text: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode
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7110a5t.
BUK617-500AE/BE
OT227B
BUK617
-500AE
BUK617-500AE
BUK617-500AE
TRANSISTOR C 557 B
TIC 136 Transistor
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TDA6101
Abstract: TDA6101BQ SIL9
Text: bSE D P H I L IP S I N T E R N A T I O N A L • 7 1 1 0 0 2 b Q O b D ö b H öl3 M P H I N Philips Preliminary specification Video output amplifier TDA6101BQ FEATURES • Simple application with a variety of colour decoders
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711002b
TDA6101BQ
TDA6101
TDA6101BQ
SIL9
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