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    60N02R Price and Stock

    onsemi NTD60N02R

    MOSFET N-CH 25V 8.5A/32A DPAK
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    DigiKey NTD60N02R Tube 1,950
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    Bristol Electronics NTD60N02R 465
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    onsemi NTD60N02RG

    MOSFET N-CH 25V 8.5A/32A DPAK
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    DigiKey NTD60N02RG Tube
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    onsemi NTD60N02RT4

    MOSFET N-CH 25V 8.5A/32A DPAK
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    DigiKey NTD60N02RT4 Reel
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    Rochester Electronics NTD60N02RT4 1,133 1
    • 1 $0.13
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    • 100 $0.1222
    • 1000 $0.1105
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    Rochester Electronics LLC NTD60N02R-1G

    MOSFET N-CH 25V 8.5A/32A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTD60N02R-1G Tube 2,664
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    onsemi NTD60N02R-1G

    MOSFET N-CH 25V 8.5A/32A IPAK
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    DigiKey NTD60N02R-1G Tube
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    Farnell NTD60N02R-1G Each 1,500
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    • 10000 £0.095
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    Rochester Electronics NTD60N02R-1G 334,998 1
    • 1 $0.1083
    • 10 $0.1083
    • 100 $0.1018
    • 1000 $0.0921
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    Find more 60N02R price and stock on Findchips.com

    60N02R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T60 N02R

    Abstract: T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r NTD60N02RG 60N02 NTD60N02RT4G NTD60N02R
    Text: 60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G NTD60N02R-1 NTD60N02R-1G BRD8011/D. T60 N02R T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r 60N02

    T60N02R

    Abstract: No abstract text available
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D T60N02R

    60N02

    Abstract: t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R
    Text: 60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D 60N02 t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R

    T60 N02R

    Abstract: T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.0 mW @ 4.5 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip


    Original     		PDF NTD60N02R NTD60N02R/D T60 N02R T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4

    T60 N02R

    Abstract: T60N02R 60N02R 60N02 n02r
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.4 mW @ 10 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip


    Original     		PDF NTD60N02R NTD60N02R/D T60 N02R T60N02R 60N02R 60N02 n02r

    Untitled

    Abstract: No abstract text available
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R r14525 NTD60N02R/D

    n02r

    Abstract: T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948
    Text: 60N02R Power MOSFET 62 Amps, 24 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D n02r T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948

    60N02

    Abstract: t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G
    Text: 60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D 60N02 t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G

    NTD60N02R

    Abstract: NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R
    Text: 60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D NTD60N02R NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R

    60N02

    Abstract: 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D 60N02 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4

    t60n02r

    Abstract: T60 N02R 60N02R T 60 N02R 60N02
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D t60n02r T60 N02R 60N02R T 60 N02R 60N02

    diode C531

    Abstract: c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504
    Text: NCP5318DEMO NCP5318 Four Phase Demonstration Board Note Switching Regulator Controller http://onsemi.com DEMONSTRATION NOTE Features Protection Features • Programmable 2/3/4 Phase Operation • Lossless Current Sensing • Enhanced V2 Control Method Provides Fast Transient


    Original     		PDF NCP5318DEMO NCP5318 NCP5318DEMO/D diode C531 c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504