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Status Instruments Ltd SEM1600VI mA / voltage repeater conditione
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SEM1600VI	Ammo Pack			1	1 $198.8 10 $198.8 100 $198.8 1000 $198.8 10000 $198.8	Buy Now
Newark	SEM1600VI	Bulk	20		1	1 $237.73 10 $202.8 100 $169 1000 $146.35 10000 $146.35	Buy Now
DITEL KOS1600VIA mA/Voltage Signal Conditioner
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KOS1600VIA				1	1 $178 10 $178 100 $178 1000 $178 10000 $178	Buy Now
Vishay Intertechnologies KBL06-E4/51 Bridge Rectifiers 4.0 Amp 600 Volt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	KBL06-E4/51	Tray	8,400		300	1 - 10 - 100 - 1000 $1.75 10000 $1.75	Buy Now
Vishay Intertechnologies KBU4J-E4/51 Bridge Rectifiers 4.0 Amp 600 Volt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	KBU4J-E4/51	Tray	650		50	1 - 10 - 100 $1.93 1000 $1.79 10000 $1.75	Buy Now
Vishay Intertechnologies KBU8J-E4/51 Bridge Rectifiers 8.0 Amp 600 Volt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	KBU8J-E4/51	Tray	500		250	1 - 10 - 100 - 1000 $2.15 10000 $2.15	Buy Now

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600VI Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
infineon power cycling igbt3 Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2 Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,	Original	PDF	D-59581 200V-Trench- 1998-Kyoto 2003N 00V-IGBT³ 2004-N infineon power cycling igbt3 IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT igbt simulation IGBT2
FS50R12KT3 Abstract: Infineon technology roadmap for IGBT infineon power cycling Infineon IGBT2 cycling FS50R12KT4 Semiconductor Group igbt Eoff-FS100R12KE3 Gate Turn-off Thyristor 600V 20A igbt simulation 62mm-Modul Text: Higher Junction Temperature in Power Modules – a demand from hybrid cars, a potential for the next step increase in power density for various Variable Speed Drives Dr. Reinhold Bayerer, Infineon Technologies AG, Max-Planck-Str. 5, Warstein, Germany Abstract	Original	PDF
BSM20GP60 Abstract: BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2 Text: European Power Semiconducctor and Electronics Company GmbH + Co. KG 600V IGBT modules reach new levels of efficiency for power electronics applications. By Andreas Karl, 1998 Existing and newly evolving markets and applications for power electronics are challenging electronics manufacturers	Original	PDF	BSM10GP60 BSM10GD60DL BSM15GP60 BSM15GD60DL BSM20GP60 BSM20GD60DL BSM30GP60 BSM30GD60DL BSM50GD60DL BSM75GD60DL BSM20GP60 BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2
EPCOS B32362 Abstract: B32361A2806J050 B32362A3207J030 B32360A2306J050 B32360A2806J050 B32360A4305J080 B32361A4506J080 IEC61071 B32360A2106J050 B32360A2156J050 Text: Power electronic capacitors General purpose applications Series/Type: B3236x Date: Version: 2006-07-04 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white" or invisible . This ensures that the table disappears for the customer	Original	PDF	B3236x EPCOS B32362 B32361A2806J050 B32362A3207J030 B32360A2306J050 B32360A2806J050 B32360A4305J080 B32361A4506J080 IEC61071 B32360A2106J050 B32360A2156J050
Untitled Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER lOR j\| 4055455 □□0720cï E \| in t e r n a t io n a l, r e c t if i e r _ T — c/— 7^3 DataSheetNo.PD-2.139 R30D & R30DR S E R IE S 600 - 400 VOLTS R A N G E 485 A M P AVG S T U D M O U N T E D D IF F U SE D JU N C T IO N R E C T IF IE R D IO D E S	OCR Scan	PDF	0720c R30DR 600Vi R30DR6A.
UC5613 Abstract: LX5204 LX5204CDP LX5204CDPT LX5204CPWP UC5603 LX5268 Text: LIN Doc #; 5204 9-Line H o t T h e I n f i n i t e P o w e r I o f n n o v a t i o n P S wap, [iPower D r o d u c t i o n DESCRIPTION T he LX5204 is a n in e-lin e active te rm in a to r fo r th e SCSI p arallel bus. This SCSI sta n d a rd re c o m m e n d s active te rm in a tio n at b o th	OCR Scan	PDF	LX5204 -50mA 1X5204 16-bit UC5613 LX5204CDP LX5204CDPT LX5204CPWP UC5603 LX5268
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated	OCR Scan	PDF	QCA75AA100 E76102 100msec 00V-----IB,
PC929 Abstract: No abstract text available Text: PC929 SHARP Shortcircuit Protector Circuit Built-in Photocoupler Suitable for Inverter-Driving MOS-FET/IGBT PC929 T Ù V V D E 0 8 8 4 app ro v ed type is also available as an option. • Features ■ Outline Dimensions (U nit : m m ) 1. Built-in IGBT shortcircuit protector circuit	OCR Scan	PDF	PC929 E64380 PC929