NPN Transistor 1.5A 600V
Abstract: transistor 4001 BUL49A
Text: BUL49A MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 40.01 1.575 Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038)
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BUL49A
10MHz
300ms
NPN Transistor 1.5A 600V
transistor 4001
BUL49A
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2N3904
Abstract: IM22400 TLP521
Text: SDIP-IPM IM22400 Description Cyntec IPM is integrated drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● Home appliances applications. Inverter drive parts for AC/DC motor driving.
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IM22400
E204652
MM22400003
2N3904
IM22400
TLP521
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IM22400
Abstract: tlp521 Photocoupler 2N3904 TLP521 ipm application note
Text: SDIP-IPM IM22400 Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: Home appliances applications. Inverter drive parts for AC/DC motor driving. Features
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IM22400
E204652
MM22400003
IM22400
tlp521 Photocoupler
2N3904
TLP521
ipm application note
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transistor tl 430 c
Abstract: No abstract text available
Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =
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BDY46
transistor tl 430 c
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2N3904
Abstract: TLP521 tlp521 Photocoupler
Text: SDIP-IPM IM22400E Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: Home appliances applications. Inverter drive parts for AC/DC motor driving. Features
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IM22400E
E204652
MM22400E04
2N3904
TLP521
tlp521 Photocoupler
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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NPN Transistor 50A 400V
Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly
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NTE99
NTE99
NPN Transistor 50A 400V
NPN 400V 40A
npn darlington 400v 15a
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500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,
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Power247TM,
500W TRANSISTOR AUDIO AMPLIFIER
IN5822 diode
irfs6408
220V ac to 9V dc converter circuit
DC 48v AC 220v 500w smps
P-Channel MOSFET 800v
SB550 transistor
drive motor 10A with transistor P channel MOSFET
P channel 600v 20a IGBT
list of n channel power mosfet
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MG15G1AL3
Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)
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MG15G1AL3
MG15G1AL3
MG15G1AL3 equivalent
mg15g1
mg15g
MG15G1AL
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MG15G6EL1
Abstract: No abstract text available
Text: MG15G6EL1 QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in 1 Package. . With Built-in Free Wheeling Diodes.
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MG15G6EL1
TjSa25r
MG15G6EL1
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mg15n6ek1
Abstract: No abstract text available
Text: GTR MODULE MG15N6EK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min. (IC=15A)
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MG15N6EK1
mg15n6ek1
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15N2YK1 HIGH POWER S WITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hj-E= l°0 Min. (Ic=15A)
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MG15N2YK1
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MG15H1AL1
Abstract: NPN Transistor 1.5A 600V
Text: G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15H1AL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current: Gain : hFE=100 Min. (Ic=15A) . Low Saturation Voltage : VcE(sat)=2V(Max.) (Ic=15A)
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MG15H1AL1
MG15H1AL1
NPN Transistor 1.5A 600V
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mg15h6
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min.
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MG15H6EL1
mg15h6
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MG15G6EL1
Abstract: MG15G6
Text: GTR MOOULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G6EL1 HIGH POWER SWIT CH I NG APPLICATIONS. M OT O R C O NTROL APPLICATIONS. FEATURES: . The C o l l e c t o r is Isolated from Case. . 6 D a r l i n g t o n T r a n s i s t o r s are Built-ii 1 Package. . W i t h Buil t - i n
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MG15G6EL1
MG15G6EL1
MG15G6
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MP6504
Abstract: MP65
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MP6504 HIGH P O W E R S W I T C H I N G A P P L I C A T I O N S . ' TATIVE MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r is Isola t e d from Case. . 6 D a r l i n g t o n T r a n s i s t o r are B u i l t - i n to
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MP6504
40raH
MP6504
MP65
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TOSHIBA MG15G1AL3
Abstract: No abstract text available
Text: TOSHIBA -[DISCRETE/OPTO]- deT 9 0 97250 T O SHIBA DISCRETE/OPTO t o ^ s s o 90D 16199 SEMICONDUCTOR ¿/oòiììhi J D o i t m s DT'-33’3S' TOSHIBA G-TR MODULE MG15 G 1 A L 3 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POI 1ER SWITCHING APPLICATIONS.
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Ta90D
DT-33-3S
MG15G1AL3
EGA-MG15G1AL3-4
TOSHIBA MG15G1AL3
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MG15H6EL1
Abstract: No abstract text available
Text: ~TD TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO> ¿^ashtha SEMICONDUCTOR D Ë Ï TOTTESO DD lt.HM 4 90D 16209 D”T-3 'Ò-'ÒS TOSHIBA GTR MODULE MG15H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG15H6EL1
EGA-MG15H6EL1-1
MG15H6EL1
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2SD1314
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1314 INDUSTRIAL APPLICATIONS Unit HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. in m m 0 3 .3 ± q g FEATURES: . H i g h DC C u r r e n t G a i n : h F E = 1 0 0 ( M i n .) (Ic=15A) . Low Saturation Voltage
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2SD1314
2SD1314
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MG15G4GL1
Abstract: toshiba mg15g4gl1 MG15G6EL1 MG15 npn DARLINGTON 15A 248A1 mg15g4
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "TD <DISCRETE/OPTO> V ' r - ‘2 > 3 - ‘3 £ ' 90D 16203 TOSHIBA GTR MODULE SEMICONDUCTOR ¿Tasiiiht DÊjH T O T T E S D O O l b H D E 3 J - MG15G4GL1 MG15G6EL1 TECHNICAL DATA SILIC O N NPN T R IP L E DIFFUSED TYPE
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MG15G4GL1
MG15G6EL1
MG15G4GL1
MG15G6EL1
110X7
2-48A1A
toshiba mg15g4gl1
MG15
npn DARLINGTON 15A
248A1
mg15g4
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)
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2SD1314
VCC-300V
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2sd1314
Abstract: 2-21F1A
Text: TO SHIBA 2SD1314 2 SD1 31 4 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. (¿3.3 ±0.2 20.5MAX. • • • High DC Current Gain : hpE = 100 (Min.) Low Saturation Voltage : V qe (sat) = 2V (Max.)
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2SD1314
2sd1314
2-21F1A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON K mm nmmr n m v u • HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. <¿3.3 + 0.2 2Q.5MAX. • High DC Current Gain : hpE = 100 (Min.) • Low Saturation Voltage : V(}E(sat)“ 2V (Max.)
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2SD1314
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WOIM
Abstract: SD W1p ET375 SC-65 T460
Text: ET375 • g ± s ir j- \ . = 7 'S Ì > X 9 NPN = *te iJ & U - 1 -» TRIPLE D IFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING £W /± , ; Features • SffiiJE High voltage • ¡fiElffStt High reliability Including free wheeling diode
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ET375
lir15
I95t/R89
WOIM
SD W1p
ET375
SC-65
T460
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