2SC5287
Abstract: transistor 2SC5287 DSA0016511
Text: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25
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2SC5287
MT-100
100max
Pulse10)
550min
50typ
2SC5287
transistor 2SC5287
DSA0016511
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TO220 HEATSINK DATASHEET
Abstract: 2SC5239 ATV3 transistor 800V 1A
Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2
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2SC5239
MT-25
100max
550min
300mA
TO220 HEATSINK DATASHEET
2SC5239
ATV3
transistor 800V 1A
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2SC3927
Abstract: DSA0016508
Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC
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2SC3927
MT-100
100max
550min
Pulse15)
105typ
2SC3927
DSA0016508
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PDF
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2SC5239
Abstract: No abstract text available
Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 550 VEBO IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 50(Tc=25°C)
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2SC5239
100max
550min
35typ
300mA
MT-25
2SC5239
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2SC4517
Abstract: 4517A transistor 800V 1A 2sc4517a
Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 2SC4517 2SC4517A 10.1±0.2
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2SC4517/4517A
2SC4517
2SC4517A
O220F)
100max
550min
35typ
4517A
transistor 800V 1A
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4517A
Abstract: 2sc4517 2SC4517A FM20
Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 10.1±0.2 IB 1.5 A VCE(sat)
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2SC4517/4517A
100max
550min
O220F)
35typ
300mA
2SC4517
2SC4517A
4517A
2SC4517A
FM20
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PDF
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2SC5287
Abstract: No abstract text available
Text: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25
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Original
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2SC5287
MT-100
100max
Pulse10)
550min
50typ
2SC5287
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PDF
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2SC4557
Abstract: No abstract text available
Text: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 A VCE(sat) IC=5A, IB=1A 0.5max 80(Tc=25°C)
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2SC4557
100max
550min
Pulse20)
105typ
FM100
2SC4557
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PDF
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2SC3927
Abstract: No abstract text available
Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA V V(BR)CEO IC=10mA 550min V VCE=4V, IC=5A 10 to 28 10(Pulse15) A hFE IB 5 A VCE(sat) PC 120(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150
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2SC3927
100max
550min
Pulse15)
105typ
MT-100
2SC3927
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PDF
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2SC4518
Abstract: 2SC4518A FM20
Text: 2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE
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2SC4518/4518A
100max
O220F)
2SC4518
2SC4518A
550min
Pulse10)
50typ
2SC4518A
FM20
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EE 70 bobbin
Abstract: core EE 25 transformer ER 2510 type bobbin EE 20 bobbin RM8 smd bobbin rm8 bobbin EE ferrite core FERRITE TRANSFORMER ee BRM-8-718CP FERRITE core ee TRANSFORMER
Text: 1/4 001-01 / 20011019 / e122.fm Ferrite Cores C, EP, P, EPC, EEM, PQ, RM, ER, EE Series High Flux Density, High Permeability Material Material DN50 It has become an important issue to support global method of ISDN interfaces associated with the widespread use of ISDN networks worldwide. TDK’s ferrite material DN50, a high µ and high B
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500mT,
DN50P4
DN50P5
DN50P7/4
DN50ER9
DN50ER11/3
DN50ER11/5
DN50ER14
DN50EPC10
DN50EPC13
EE 70 bobbin
core EE 25 transformer
ER 2510 type bobbin
EE 20 bobbin
RM8 smd bobbin
rm8 bobbin
EE ferrite core
FERRITE TRANSFORMER ee
BRM-8-718CP
FERRITE core ee TRANSFORMER
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d2494
Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in
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n6to4467
2SD211to214
2SC4468
2SC1828
2SC3832
2SA768to769
2SA1262
2SA770to771
2SA1725
2SA957to958
d2494
c4381
B1625 equivalent transistor
a1668 transistor
a1695 power transistor
D2495
c3852a
D1796 power transistor
c5287
D2493
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2SC4518
Abstract: 2SC4518A FM20
Text: 2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Symbol 2SC4518 2SC4518A •Electrical Characteristics (Ta=25°C) Symbol Conditions 2SC4518 2SC4518A
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2SC4518/4518A
2SC4518
2SC4518A
100max
O220F)
550min
Pulse10)
50typ
2SC4518A
FM20
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PDF
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2SC4557
Abstract: No abstract text available
Text: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 10(Pulse20) A hFE V 5 A VCE(sat) IC=5A, IB=1A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A
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2SC4557
100max
Pulse20)
550min
105typ
50eristics
FM100
2SC4557
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C3679 equivalent
Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.
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T01EE0
H1-T01EE0-0107020SB
C3679 equivalent
transistor c3835
a1695 power transistor
SK C4020
b1686
sk c4467
c4381
SK C5071
transistor c3856 npn
C4020 TO220
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTP 55E ]> • 7tì,:l D 7 m GGG1013 ST7 * S A K J Silicon NPN Triple Diffused Planar *~T — 2SC4557 A p p lic a t io n E x a m p le : S w itching Regulator and General Purpose • Outline Drawing 5 . . FM 100 Electrical Characteristics
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OCR Scan
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GGG1013
2SC4557
100max
550min
10min
sFM100
45x01
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PDF
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gps 680
Abstract: No abstract text available
Text: TEM MODE RESONATOR SILVER PLATED m u R a ta DRR Series FEATURES • High Q ■ IR Reflowable ■ Surface Mountable APPLICATIONS ■ Radio telephone VCO ■ Measuring Instruments OSC ■ G.P.S. or Geostar OSC ■ HDTV tuner OSC PART NUMBERING SYSTEM [ ORR I
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OCR Scan
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2R330
1R180
10MHz
17/fo
33/fo
360min
1990MHz)
400min
2700MHz)
480min
gps 680
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PDF
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550mi
Abstract: No abstract text available
Text: TEM MODE RESONATOR SILVER PLATED DRR Series FEATURES • High Q ■ IR Reflowable ■ Surface Mountable APPLICATIONS ■ Radio telephone VCO ■ Measuring Instruments OSC ■ G.RS. or Geostar OSC ■ HDTV tuner OSC PART NUMBERING SYSTEM I DRR DRR I I ! 040
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OCR Scan
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2R330
1R180
10MHz
17/fo
33/fo
360min
1990MHz)
400min
2700MHz)
480min
550mi
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PDF
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE » Lrl I; 7*^0741 QG01G11 414 H S A K J Silicon NPN Triple Diffused Planar ☆ H ig h Voltage Switching Transistor 2SC4518A Application Exwnpla : Switching Regulator,Lighting Inverter, and General Purpose Electrical Characteristics
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OCR Scan
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QG01G11
2SC4518A
2SC4518
550min
10Omax
MT-25
T0220)
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PDF
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