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    514260B Price and Stock

    Toshiba America Electronic Components TC514260BJL70

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    Bristol Electronics TC514260BJL70 901
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    SK Hynix Inc HY514260BJC-60

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    Bristol Electronics HY514260BJC-60 473 1
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    Toshiba America Electronic Components TC514260BJ-70

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    Bristol Electronics TC514260BJ-70 11
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    ComSIT USA TC514260BJ-70 8
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    SK Hynix Inc HY514260BJC-70

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    Bristol Electronics HY514260BJC-70 2
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    Hyundai LCD (HK) Co Ltd HY514260BJC60DR

    256K X 16, CMOS DRAM WITH /2CAS Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40
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    ComSIT USA HY514260BJC60DR 218
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    514260B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ASC 12.288

    Abstract: SAA7131 416c256-7 ISO11172 SAA7151B SAA7191B 4C1625 4C16256 SCR PIN CONFIGURATION picture scw 84
    Text: Philips Semiconductors Preliminary specification Full MPEG1 video and audio decoder FMPEG 1. SAA7131 FEATURES Features of the FMPEG: • Fully ISO 11172-1, -2 and -3 compatible single chip MPEG1 video and audio decoder • Decodes a video and/or audio stream with the system layer or without a system layer (single bitstream mode)


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    PDF SAA7131 ASC 12.288 SAA7131 416c256-7 ISO11172 SAA7151B SAA7191B 4C1625 4C16256 SCR PIN CONFIGURATION picture scw 84

    Untitled

    Abstract: No abstract text available
    Text: O K I Sem iconductor 514260B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514260B/BSL is a 262,144-word x 16-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The M SM 514260B/BSL achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal C M O S. The M SM 514260B/BSL is


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    PDF MSM514260B/BSL 144-Word 16-Bit 514260B/BSL 40-pin MSM514260BSL

    514260b

    Abstract: 514260 M5M51426 msm514260b
    Text: O K I Sem iconductor MSM514 2 6 0 B /B S L 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M 5M 514260B/BSL is a new generation Dynamic RAM organized as 262,144-w ord x 16-bit configuration. The technology used to fabricate the M SM 514260B/BSL is OKI's CMOS silicon gate process


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    PDF MSM514260B/BSL 144-Word 16-Bit M5M514260B/BSL MSM514260B/BSL 128ms 514260b 514260 M5M51426 msm514260b

    HY514260B

    Abstract: No abstract text available
    Text: »HYUNDAI 514260B Series 256K X 1 6 - b lt CMOS DRAM w ith 2CAS PRELIMINARY DESCRIPTION The 514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


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    PDF HY514260B 16-bit 400mil 40pin 40/44pin 1AC25-00-MA HY514170BJC

    Untitled

    Abstract: No abstract text available
    Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )


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    PDF 51V16160A 51V18160A 116160A 118160A 256Kx4 514260B/BSL 514256C/CL 51V6800A 51V16100A 51V17100A

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 514260BJ / BZ/ BFT/ BTR - 70 514260BJ / BZ / BFT / BTR - 80 514260BJ / BZ / BFT / BTR -1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 W ORD x 16 BIT DYNAM IC RAM DESCRIPTION


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    PDF TC514260BJ TC514260BJ/BZ/BFT/BTR TC514260BJâ

    HY514260B

    Abstract: HY514260BJC 404Q0 HY514260 514260
    Text: - « H Y U N D A I 514260B Series 256K x 16-bit CMOS DRAM with 2CAS DESCRIPTION The 514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


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    PDF HY514260B 16-bit 400mil 40pin 40/44pin 404Q0 X30SC HY514260BJC HY514260 514260

    514260

    Abstract: 4C16256 IDCT NEC uPD 833 Philips SAA713 samsung i2s SAA7131 SCR PIN CONFIGURATION picture of samsung IC 9290 micron lable information
    Text: Philips Semiconductors Preliminary specification Full MPEG1 video and audio decoder FMPEG SAA7131 FEATURES Features of the FMPEG: • Fully ISO 11172-1, -2 and -3 compatible single chip MPEG1 video and audio decoder • Decodes a video and/or audio stream with the system layer or without a system layer (single bitstream mode)


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    PDF SAA7131 SAA7131A IOCS16N 711Dfl2t 514260 4C16256 IDCT NEC uPD 833 Philips SAA713 samsung i2s SAA7131 SCR PIN CONFIGURATION picture of samsung IC 9290 micron lable information

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor 514260B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 514260B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 514260B/BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The 514260B/BSL is


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    PDF MSM514260B/BSL 144-Word 16-Bit MSM514260B/BSL 40-pin MSM514260BSL

    C1617

    Abstract: HY514260 HY514260BJ
    Text: 514260B Series •HYUNDAI 256K x 16-bit CMOS DRAM with /2CAS DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipa­


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    PDF 16-bit HY514260B HY514260BJC HY514260BLJC HY514260BSLJC HY514260BLTC HY514260BSLTC HY514260BRC C1617 HY514260 HY514260BJ

    SM511

    Abstract: No abstract text available
    Text: DRAMS 1-MEG DRAMS Pins / Package Configuration M SM 5 11 6 64 B-XX Fast page 4 0 / D IP 64K x 16 80 M SM 514256C -X X Fast page 2 0 / DIP, Z IP 256K x 4 60,70,80 1 -M e g x 1 60,70, 80 Pins / Package Configuration Access Time M ax ns 64/SSO P 128K x 32 45,50


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    PDF 514256C 32128-XX 4280-XX MSM51V4400C/CL-XX 514400C/CL-XX 64/SSO 26/SOJ MSM514100C/CL-XX 26/SO SM511

    OE306G

    Abstract: BF900 62x42b 62X42 KGF2701 S/KGF2701
    Text: P art Ni mber Index K M S C 1 1 4 6 B . 3? K G F 1 145 . . 7 7 K G F 1 146 . M S C 1 1 4 9 . 7 K G F1155B . M S C 2 3 8 3 7 A . . 44 M S M 5 1 4 2 2 3 B . . 37 M S M 5 3 1 6 3 2 C .


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    PDF F1155B F1156 KGF1191 F1254B F1256B 514260B OE306G BF900 62x42b 62X42 KGF2701 S/KGF2701

    514260

    Abstract: NEC uPD 833 dorsch fifo buffer video audio multiplex full empty Philips SAA713 s3 924 video SAA7131 samsung i2s t1is horizonal sync interlaced
    Text: Philips Semiconductors Preliminary specification Full MPEG1 video and audio decoder FMPEG 1. SAA7131 FEATURES Features of the FMPEG: • Fully ISO 11172-1, -2 and -3 compatible single chip MPEG1 video and audio decoder • Decodes a video and/or audio stream with the system layer or without a system layer (single bitstream mode)


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    PDF SAA7131 SAA7131A IOCS16N 110fl2fa 514260 NEC uPD 833 dorsch fifo buffer video audio multiplex full empty Philips SAA713 s3 924 video SAA7131 samsung i2s t1is horizonal sync interlaced

    HYUNDAI i10

    Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3
    Text: H Y 5 1 4 2 6 0 B S e r ie s 256K x 16-bit CMOS DRAM with 2CAS ‘ • H Y U N D A I DESCRIPTION The 514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


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    PDF HY514260B 16-bit 400mil 40pin 40/44pin 0063BJ10) 4b750aa HYUNDAI i10 MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3