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    MSM514 Price and Stock

    OK International MSM514400D-60SJ7FHE

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MSM514400D-60SJ7FHE 15,790 2
    • 1 -
    • 10 $2.184
    • 100 $1.5681
    • 1000 $1.3776
    • 10000 $1.3776
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    OK International MSM514400D-60SJ-7DR1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MSM514400D-60SJ-7DR1 12,000 2
    • 1 -
    • 10 $2.025
    • 100 $1.0125
    • 1000 $0.891
    • 10000 $0.891
    Buy Now

    OK International MSM514260CSL-60JS

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MSM514260CSL-60JS 3,338
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    OKI Semiconductor MSM514800C-60JS

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MSM514800C-60JS 620
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    OK International MSM514256C-60JS

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MSM514256C-60JS 550
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    MSM514 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM514100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MSM514100-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MSM514100-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Type Scan PDF
    MSM514100-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Type Scan PDF
    MSM514100-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MSM514100-80 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Type Scan PDF
    MSM514100-8A Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MSM514100A-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100A-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100A-80 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100AL-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100AL-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100AL-80 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100B-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100B-60 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100B-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100B-80 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100BL-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100BL-60 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    MSM514100BL-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Fast Page Mode Original PDF
    ...

    MSM514 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSM514900CSL

    Abstract: No abstract text available
    Text: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate


    Original
    PDF E2G0025-17-42 MSM514900C/CSL 288-Word MSM514900C/CSL 28-pin 28pin MSM514900CSL

    MSM514256C

    Abstract: DIP20-P-300-2 MSM514256CL
    Text: E2G0010-17-41 ¡ Semiconductor MSM514256C/CL ¡ Semiconductor This version: Jan. 1998 MSM514256C/CL Previous version: May 1997 262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS


    Original
    PDF E2G0010-17-41 MSM514256C/CL 144-Word MSM514256C/CL 20-pin 26/20-pin MSM514256C DIP20-P-300-2 MSM514256CL

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original
    PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: MSM514222B-30JS 1/2 IL00 * C-MOS 1M (262,263 X 4)-BIT FIELD MEMORY -TOP VIEW4 VDD 26 (+5V) WE IN 1 RSTW IN 2 25 RE SWCK IN 3 24 RSTR 10 11 IN 12 IN 25 1 D in 0 4 23 SRCK NC 22 D out 0 D in 1 D out 1 D in 2 D out 2 D in 3 D out 3 D in 1 10 17 D out 0


    Original
    PDF MSM514222B-30JS

    MSM514262

    Abstract: MSM514262-10 MSM514262-70 MSM514262-80
    Text: E2L0013-17-Y1 ¡ Semiconductor MSM514262 ¡ Semiconductor This version:MSM514262 Jan. 1998 Previous version: Dec. 1996 262,144-Word ¥ 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and


    Original
    PDF E2L0013-17-Y1 MSM514262 144-Word MSM514262 144-word 512-word MSM514262-10 MSM514262-70 MSM514262-80

    Untitled

    Abstract: No abstract text available
    Text: FEDD514400D-01 Issue Date: Mar. 8, 2011 MSM514400D 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400D is a 1,048,576-word  4-bit dynamic RAM fabricated in OKI semiconductor’s silicon-gate CMOS technology. The MSM514400D achieves high integration, high-speed operation, and low-power


    Original
    PDF FEDD514400D-01 MSM514400D 576-Word MSM514400D 576-word 26/20-pin cycles/16

    bq785

    Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d
    Text: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and


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    PDF E2G0022-17-41 MSM5141 304-Word MSM514100D/DL a26/20-pin 20-pin 26/20-pin bq785 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d

    transistor sl 431

    Abstract: ZIP40-P-475
    Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate MSM51419 0 /SL is OKI's CMOS silicon gate process technology.


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    PDF MSM514190/SL_ 144-Word 18-Bit MSM514190/SL theMSM514190/SL cycles/16ms, transistor sl 431 ZIP40-P-475

    m514262

    Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
    Text: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.


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    PDF MSM514262 144-Word MSM514262 512-words SOJ28-P-400-1 50MBB SOJ32-P-400-1 m514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426

    T02I

    Abstract: 26-PIN ZIP20-P-400 514100B
    Text: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.


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    PDF MSM514100B MSM514100BL 304-Word MSM514100B/BL cycles/16ms, cycles/128ms 2424G T02I 26-PIN ZIP20-P-400 514100B

    mx d 362

    Abstract: MSM514212ZS-28
    Text: - 362 - » 1 1 t7 .« .1 D ri1 y o iii w r,V n q ¿ .K i, lU ,V J.ii, -9 n,-W t=i /-• h / i 'Jfltdt MSM514212ZS-28. -34, -50 NEC it 1135W x 8 bits 5048WX 8 bits • • • I / O - t r ^ V - h x 8bitsigf$: rK— hfHtft • FIFO fftft 5V ±10% S if . i f iS H iiiu x ? > 'M ‘ mA)


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    PDF PD42102C MSM514212ZS-28, 1135WX 5048WX //PD41102Ã -I511 24P-DIP 24P-SOP 28PZIP /iPD41101, mx d 362 MSM514212ZS-28

    Untitled

    Abstract: No abstract text available
    Text: OKI semiconductor_ MSC2357-XXYS8 1,048,576 Word x 32 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE ^ GENERAL DESCRIPTION The Oki MSC2357-xxYS8 is a fully decoded, 1,048,576 word by 32 bit CMOS dynamic random access memory composed of eight 4Mb DRAMs in SOJ MSM514400JS . The mounting of eight


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    PDF MSC2357-XXYS8 MSC2357-xxYS8 MSM514400JS) MSM514400JS; 72-Pin

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514252A 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514252A is a CMOS multiport memory composed of a 262,144-words by 4-bits dynamic random access memory, RAM port, and a 512-words by 4-bits static serial access memory, SAM


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    PDF MSM514252 144-Word MSM514252A 144-words 512-words SQJ28-P-400-1 SQJ32-P-400-1

    a10u

    Abstract: B724e
    Text: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.


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    PDF MSM514101B/BL 304-Word MSM514101B/BL 1024cycles/16ms, 128ms a10u B724e

    OF100

    Abstract: MSM514256 MSM514256CL ZIP20-P-400 msm514256c
    Text: O K I Sem iconductor MSIVI514256C /C L_ 262,144-W ord x 4-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is


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    PDF MSIVI514256C/CL_ 144-Word MSM514256C/CL 20-pin 26/20-pin MSM514256CL OF100 MSM514256 MSM514256CL ZIP20-P-400 msm514256c

    MSM514221-6

    Abstract: TMs4C1050 MSM514221
    Text: 4bE T> b72424G 0GlQ04b ATS « O K I J O K I semiconductor O K I MSM514221 SEMICONDUCTOR GROUP 262,263 w ords X 4 bits field memory GENERAL MSM514221 is a CMOS dynamic memory device organized as 256K+ 120 words by 4 bits; serial access memory that performs high speed, asynchronous read/write operation.


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    PDF b724240 001004b MSM514221 300mil 16PIN-DIP. MSM514221 24EMQ 00100S2 MSM514221-6 TMs4C1050

    mx232

    Abstract: YS2 100 a 741 j
    Text: 4bE D • b724E4Q HOKIJ O K I semiconductor MSC2328A-XX YS2/KS2 T - 262,144 BY 8 BIT DYNAMIC RAM MODULE O K I SEMI CONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2328A-XX YS2/KS2 is a fully decoded, 262,144 w o rd sx8 bit CMOS dynamic random access memory composed of two 1Mb DRAMs in SOJ MSM514256AJS . The mounting of two SOJs


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    PDF b724E4Q MSC2328A-XX MSM514256AJS) MSM514256A RAM-MSC2328A-XXYS2/KS2" T-46-23-17 RAM-MSC2328A-XX mx232 YS2 100 a 741 j

    transistor a7g

    Abstract: a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80
    Text: SÔE T> • h?2424D DDIHT?! Tb3 « O K I J 0 « I SEMICONDUCTOR GROUP O K I s e m ic o n d u c to r - r - H t - z s - i s M S M 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit.


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    PDF MSM514101_ 304-Word MSM514101 26-pin 20-pin 18-pin --MSM514101. transistor a7g a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80

    Untitled

    Abstract: No abstract text available
    Text: MSM514265C/CSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM514265C/CSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514265C/CSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514265C/CSL is


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    PDF MSM514265C/CSL 144-Word 16-Bit MSM514265C/CSL 40-pin MSM514265CSL

    MSM514400C/CL-60

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514400C/CL_ 1,048,576-W ord x 4-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is


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    PDF MSM514400C/CL_ MSM514400C/CL 576-word 26/20-pin 20-pin or26/20-pin MSM514400CL MSM514400C/CL-60

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2320B-xxYS9/DS9 is a fully decoded 262,144-word x 36-bit CMOS Dynamic Random Access Memory Module . It is composed of eight 1-Mb DRAMs in SOJ MSM514256B packages, and four 256Kb


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    PDF MSC2320B-XXYS9/DS9 144-Word 36-Bit MSC2320B-xxYS9/DS9 MSM514256B) 256Kb MSM51C256A) 72pin

    Untitled

    Abstract: No abstract text available
    Text: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology.


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    PDF b72M2MD MSM514256A 144-WORD MSM514256A

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M SM 514800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D ESCR IPTIO N The M SM514800A/ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM514800A/ASL is OKI's CMOS silicon gate process


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    PDF MSM514800A/ASL 288-Word MSM514800A/ASL cycles/16ms, cycles/128ms b7E4240 MSM514800A/AS

    MSM514223B

    Abstract: MSM514223B-40RS MSM514223B-60RS MSM518222
    Text: O K I Semiconductor MSM514223B 262,263 Word x 4-Bit Field Memory DESCRIPTION The OKI MSM514223B is a high-performance 1-Meg, 256K x 4-bit field m em ory designed for high-speed serial access applications such as H igh D efinition Television HDTV , Tim e Base Correction (TBC),


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    PDF MSM514223B MSM514223B MSM51Cycle MSM514223B-40RS MSM514223B-60RS MSM518222