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Abstract: No abstract text available
Text: Infineon Basic LED Driver TLE4242EJ 1 Channel High Side Current Source up to 500 mA Data Sheet Rev. 1.0, 2014-02-05 Automotive Power TLE4242EJ Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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TLE4242EJ
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ixf55n50
Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
Text: ECO-PACTM 2 HiPerFETTM Power MOSFET in ECO-PAC 2 PSMG 50/05* ID25 VDSS RDSon trr Electrically Isolated Back Surface Single MOSFET Die I K10 Preliminary Data Sheet X18 A1 = 43 A = 500 V Ω = 100 mΩ < 250 ns LN9 K13 K15 *NTC optional MOSFET Symbol Conditions
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125OC
100ms
ixf55n50
50N50
24 volts 100 amperes smps
9 NA STR 2005
125OC
eco-pac
PSMG50
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MTP6N60E equivalent
Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Text: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S
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IRF820
IRF820A
IRF820AS
IRF820S
IRF830A
IRF830AS
IRF830S
IRF840
IRF840A
IRF840AS
MTP6N60E equivalent
buz91a equivalent
buz90 equivalent
IRFBE30 equivalent
IRFB11N50A equivalent
irfp460a equivalent
BUZ74 equivalent
2SK2645 "cross reference"
equivalent buz305
EQUIVALENT irfp22n50a
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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Buck-Boost Converter advantages
Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Text: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.
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B152-H8202-G4-X-7600
Buck-Boost Converter advantages
SPA11N80C3
ice1qs02
tda16846
CoolMOS Power Transistor
tda4605 application note
TDA4605-3
TDA16888
ICE1QS01 equivalent
transistor
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IPW50R045CP
Abstract: JESD22
Text: IPW50R045CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS,on in TO247 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS on ,max 0.045 Ω 150 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated PG-TO247 • High peak current capability
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IPW50R045CP
PG-TO247
IPP50R045CP
5R045P
IPW50R045CP
JESD22
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smd diode UJ 64 A
Abstract: 5r140 SMD transistor marking P 5R140P
Text: IPB50R140CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.140 Ω 48 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPB50R140CP
PG-TO263
IPB50R140CP
PG-TO263
5R140P
smd diode UJ 64 A
5r140
SMD transistor marking P
5R140P
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5r199p
Abstract: D66A
Text: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPP50R199CP
PG-TO220
IPP50R199CP
PG-TO220
5R199P
5r199p
D66A
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5R140P
Abstract: IPA50R140CP PG-TO220-3-31 JESD22 CoolMOS 5R140P
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS on in TO220 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS(on),max 0.140 Ω 48 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated • High peak current capability
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IPA50R140CP
PG-TO220FP
5R140P
5R140P
IPA50R140CP
PG-TO220-3-31
JESD22
CoolMOS 5R140P
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5R199P
Abstract: 5R199 IPP50R199CP JESD22
Text: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPP50R199CP
PG-TO220
5R199P
5R199P
5R199
IPP50R199CP
JESD22
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5r199p
Abstract: 5r199 ATX SMPS IPA50R199CP JESD22 PG-TO220-3-31
Text: IPA50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPA50R199CP
PG-TO220
PG-TO220
5R199P
5r199p
5r199
ATX SMPS
IPA50R199CP
JESD22
PG-TO220-3-31
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5R140P
Abstract: IPA50R140CP JESD22 PG-TO220-3-31
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS on in TO220 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS(on),max 0.140 Ω 48 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated • High peak current capability
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IPA50R140CP
PG-TO220FP
5R140P
5R140P
IPA50R140CP
JESD22
PG-TO220-3-31
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5R199P
Abstract: 5R199 5r199p data IPB50R199CP
Text: IPB50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPB50R199CP
PG-TO263
IPB50R199CP
PG-TO263
5R199P
5R199P
5R199
5r199p data
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smd diode UJ 64 A
Abstract: 5R140P SMD transistor marking P
Text: IPB50R140CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.140 Ω 48 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPB50R140CP
PG-TO263
IPB50R140CP
PG-TO263
5R140P
smd diode UJ 64 A
5R140P
SMD transistor marking P
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5r199p
Abstract: 5r199p data
Text: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPP50R199CP
PG-TO220
IPP50R199CP
PG-TO220
5R199P
5r199p
5r199p data
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5r199p
Abstract: 5r199p data IPW50R199CP PG-TO-247
Text: IPW50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPW50R199CP
PG-TO247
IPW50R199CP
PG-TO247
5R199P
5r199p
5r199p data
PG-TO-247
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5R199
Abstract: No abstract text available
Text: IPA50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPA50R199CP
PG-TO220
PG-TO220
5R199P
5R199
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5R140CP
Abstract: IPA50R140CP
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS on in TO220 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS(on),max 0.140 Ω 48 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated • High peak current capability
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IPA50R140CP
IPA50R140CP
PG-TO220FP
5R140CP
5R140CP
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5R140P
Abstract: CoolMOS 5R140P
Text: IPP50R140CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS on in TO220 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS(on),max 0.140 Ω 48 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated • High peak current capability
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IPP50R140CP
PG-TO220
IPP50R140CP
PG-TO220
5R140P
5R140P
CoolMOS 5R140P
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IPA50R199CP
Abstract: No abstract text available
Text: IPA50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPA50R199CP
PG-TO220
IPA50R199CP
PG-TO220FP
5R199CP
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5R140P
Abstract: 5r140 SMD diode D93 IPB50R140CP PG-TO-263-3-2 ATX SMPS JESD22 PG-TO263-3-2 smd diode UJ 64 A
Text: IPB50R140CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.140 Ω 48 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPB50R140CP
PG-TO263
5R140P
5R140P
5r140
SMD diode D93
IPB50R140CP
PG-TO-263-3-2
ATX SMPS
JESD22
PG-TO263-3-2
smd diode UJ 64 A
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5R199P
Abstract: 5r199p data IPI50R199CP JESD22 TO-262-3 package infineon TO-262-3
Text: IPI50R199CP CoolMOS Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPI50R199CP
O-262-3
PG-TO262
5R199P
5R199P
5r199p data
IPI50R199CP
JESD22
TO-262-3 package infineon
TO-262-3
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VMO 440
Abstract: MOSFET Modules VMO 550-01F 40-06P1 C636 "MOSFET Modules" VKM 40-06P1
Text: MOSFET Modules N Channel Enhancement Types suffix "F“ = HiPerFET technology with intrinsic diode Voss V ► New ► VMO VMO VMO ► VMO ► VMO ► VMO ► VMO 150-01P1 550-01F 650-01F 580-02F 40-05P1 60-05F 80-05P1 100 100 100 200 500 500 500 •o* A
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OCR Scan
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150-01P1
550-01F
650-01F
580-02F
40-05P1
60-05F
80-05P1
25-05P1
40-06P1*
350-0075P
VMO 440
MOSFET Modules
VMO 550-01F
40-06P1
C636
"MOSFET Modules"
VKM 40-06P1
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100N055
Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain
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02N50D
01N100D
O-220AB
O-247
20N60C
40N60C
75N60C
45N80C
100N055
200N055
60n10
45n80
160N075
100n05
75N60
02N5
01N100D
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