MOTOROLA 813 transistor
Abstract: 4N27 qt opto 4n25 4N25 MOTOROLA
Text: QT Optoelectronics MOTOROLA Order this document by 4N25/D SEMICONDUCTOR TECHNICAL DATA 4N25 * 4N25A* 4N26 * 4N27 4N28 GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
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4N25/D
4N25/A,
4N25/D*
MOTOROLA 813 transistor
4N27 qt
opto 4n25
4N25 MOTOROLA
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44n25
Abstract: 4N28 opto 4N25 6 pin dip optoisolator tl7500 730A-04
Text: MOTOROLA Jameco Part Number 144240 SEMICONDUCTOR TECHNICAL DATA Order this document by 4N25/D 4N25 * 4N25A* 4N26 * 4N27 4N28 GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
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4N25/D
4N25/A,
4N25/D*
44n25
4N28 opto
4N25 6 pin dip optoisolator
tl7500
730A-04
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4N25 6 pin dip optoisolator
Abstract: a4N26 730C-04 opto 4n25 4N25 application notes 4n25 application note 4N25 4N25A 4N26 4N27
Text: MOTOROLA Order this document by 4N25/D SEMICONDUCTOR TECHNICAL DATA 4N25 * 4N25A* 4N26 * 4N27 4N28 GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor
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4N25/D
4N25A*
4N25/A,
4N25/D*
4N25 6 pin dip optoisolator
a4N26
730C-04
opto 4n25
4N25 application notes
4n25 application note
4N25
4N25A
4N26
4N27
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4N26
Abstract: 4N25 applications 4N25A 4N27 4N25 4N25A 4N26 4N27 4N28 4N28
Text: 4N25,4N25A,4N26,4N27,4N28 Short TOSHIBA Photocoupler GaAs IRed & Photo−Transistor ) AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. Twisted Pair Line Receiver
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4N25A
2500Vrms
UL1577,
E67349
11-7A8
4N26
4N25 applications
4N27
4N25 4N25A 4N26 4N27 4N28
4N28
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ge 4n25
Abstract: a4N26 2N27 4N25 application notes ge 4n26 4N25A VLS07 4N26 4N27 4N28
Text: 4N25, 4N25A 4N26 4N27 4N28 o NPN PHOTOTRANSISTOR PN INFRARED EMITTING AND DIODE . . . Gallium Arsenide LED optically coupled to a Silicon Photo Transistor designed for applications requiring electrical isolation, high-current transfer ratios, small package size and low cost; such as interfacing and coupling svstems, phase and
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4N25A
ge 4n25
a4N26
2N27
4N25 application notes
ge 4n26
4N25A
VLS07
4N26
4N27
4N28
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a4n25
Abstract: No abstract text available
Text: T O SH IB A 4N25/4N25A#4N26/4N27l4N28 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N25(Short), 4N25A(Short), 4N26(Short), 4N27(Short), 4N28(Short) AC LINE /DIGITAL LOGIC ISOLATOR. Unit in mm DIGITAL LO GIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER.
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4N25/4N25A#
4N26/4N27l4N28
4N25A
10llii
2500Vrms
UL1577,
E67349
a4n25
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4N25 application notes
Abstract: No abstract text available
Text: MOTOROLA Order this document by 4N25/D SEMICONDUCTOR TECHNICAL DATA VDE TO UL & CSA 4N25* <B> Seti SEMKO DEMKÛ NEMKO BABT GlobalO p toisola to rT 4N25A* 6 -Pin DIP O ptoisolators Transistor Output 4N26* [CTR = 20% Min] 4N27 The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
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4N25/D
4N25A*
4N25/A,
4N25 application notes
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4N25-4N28
Abstract: 4N27 Opto-isolator 4N25-27
Text: Optoisolator Specifications 4N25, 4N25A, 4N26, 4N27, 4N28 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IL L IM E T E R S M IN . MAX. 8 38 8 89 7 62 REF 8 64 406 508 5 08 1.01 1 78 2 28 2 80 2.16 203 305 2 54 The 4N25, 4N25A, 4N26, 4N27, 4N28 devices consist of a gallium
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4N25A,
E51868
0110b
4N25-4N28
4N25-4N28
4N27 Opto-isolator
4N25-27
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4n25 application note
Abstract: a4n25 4N25 applications 4N27 application note 4N25 Control 4N25 ic 4N25 4N25 pin
Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR T O SH IB A TECHNICAL 4N25 Short , 4N25A(Short)# 4N26(Short) 4N27(Short), 4N28(Short) DATA GaAs IRED & PHOTO-TRANSISTOR (4N25(Short) AC LINE /DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER.
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4N25A
2500Vrms
UL1577,
E67349
4n25 application note
a4n25
4N25 applications
4N27 application note
4N25
Control 4N25
ic 4N25
4N25 pin
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EL 4N25
Abstract: a4n25 ge 4n25 4N25 Control 4N25 OS200
Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR T O SH IB A TECHNICAL 4N25 Short , 4N25A(Short), 4N26(Short) 4N27(Short), 4N28(Short) DATA GaAs IRED & PHOTO-TRANSISTOR (4N25(Short) Unit in mm AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC /DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER.
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4N25A
2500Vrms
UL1577,
E67349
EL 4N25
a4n25
ge 4n25
4N25
Control 4N25
OS200
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TOSHIBA 4N25
Abstract: 4N25 4N25A 4N26 4N27 4N28 E67349 4N25 applications 4N25 4N25A 4N26 4N27 4N28
Text: TO SHIBA 4N25,4N25A,4N26,4N27,4N28 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N25(Short), 4N25A(Short)f 4N26(Short)f 4N27(Short)f 4N28(Short) AC LINE /DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER.
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4N25A
2500Vrms
UL1577,
E67349
TOSHIBA 4N25
4N25
4N26
4N27
4N28
E67349
4N25 applications
4N25 4N25A 4N26 4N27 4N28
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4N2S
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA «1 <0. <§> ® ® ® VDE UL CSA SETI SEMKO DEMKO NEMKO SABT GlobelOptolsolator 6-Pin DIP Optolsolators Transistor Output 4N 25* 4N25A* 4N 26* 4N27 4N28 [CTR s 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
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4N25/A,
4N25A*
4N25A
10mA--
4N2S
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 4N25,4N25A,4N26,4N27,4N28 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N25(Short), 4N25A(Short)f 4N26(Short), 4N27(Short)f 4N28(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER.
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4N25A
2500Vrms
UL1577,
E67349
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CNY17 III
Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Text: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196
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IN6264
IN6265
IN6266
4N25A
4N29A
4N32A
4N38A
BPW36
BPW37
BPW38
CNY17 III
H11M1
H11M4
SL5504
H21B5
CNX35
GE3022
l14g1-l14g2-l14g3
CNY47
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Untitled
Abstract: No abstract text available
Text: 4N25 4N25A 4N26 4N27 4N28 OPTOCOUPLERS This product range is one o f the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage com ply w ith the specifications o f the main part o f the optocoupler market.
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4N25A
E90700
0110b
003Sfc
bbS3T31
003SL
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4N25
Abstract: 4N25A 14N25 Control 4N25 IC 4N25
Text: 4N25,25A, 26,27,28 G aAs IRED a PHO TO -TRANSISTO R Unit in mm AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. RELAY CONTACT MONITOR. The TOSHIBA 4N25, 4N25A, 4N26, 4N27 and 4N28 consist
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4N25A,
2500Vrms
E67349
Ta-25
4N25
4N25A
14N25
Control 4N25
IC 4N25
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MOC3Q11
Abstract: h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
Text: Quick-Reference Product Guide HARRIS OPTOELECTRONIC Devices Index to Types Type No. ' 4 Page No. Type No. Page No. IN6264 IN6265 IN 6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196 196 196 198 198 F5F1 F5G1 GE3009 GE3010 GE3011 GE3Ô12 GE3020
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IN6264
IN6265
4N25A
4N29A
4N32A
BPW37
BPW38
CNX35
CNY28
CNY30
MOC3Q11
h11m
qx14
21B6
LED55C
H11M1
22b4
22L2
NY33
H11M4
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transistor 91 330
Abstract: tlp 122 TRANSISTOR TLP635F 388 transistor R358 395 transistor transistor f 421 IC 4N25 triac 40 RIA 120
Text: 3. Alphanumeric Index Type 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 4N35 4N36 4N37 4N38 4N38À 6N135 6N136 6N137 6N138 6N139 CNY17-L CNY17-M CNY17-N H 11AA1 H 11AA2 H11AAS H11AA4 HI 1L1 H11L3 TLP112 TLP112A TLP113 TLP115 TLP115A TLP120
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4N25A
4N29A
4N32A
6N135
6N136
6N137
6N138
6N139
CNY17-L
CNY17-M
transistor 91 330
tlp 122
TRANSISTOR
TLP635F
388 transistor
R358
395 transistor
transistor f 421
IC 4N25 triac
40 RIA 120
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Philips 4N26
Abstract: No abstract text available
Text: 4N25 4N25A 4N26 4N27 4N28 ÖUALITY TECHNOLOGIES CORP S 7E D • 74 bbfl51 G 004753 TTb «flTY ' S Ä ¿ É Ê V -VI-Î3 1- 1 OPTOCOUPLERS This product range is one of the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage comply with the specifications of the main part of the
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4N25A
bbfl51
OT212.
74bbflSl
0DD4fl03
Philips 4N26
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optocoupler 4N25 VDE
Abstract: a4n25 4N25 A4N25A 4N25A 4N26 4N27 4N28 sot90b optocoupler 4n25
Text: 4N25 4N25A 4N26 4N27 4N28 TO Æ J OPTOCOUPLERS V- T h is p ro d u c t range is o n e o f th e indu strial standards ap plied in th e m arket. T he current transfer ratio, iso la tio n voltage and lo w saturation voltage c o m p ly w ith th e sp e cifica tio n s o f th e m ain part o f the
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4N25A
E90700
0110b
7Z91427
D035b23
optocoupler 4N25 VDE
a4n25
4N25
A4N25A
4N25A
4N26
4N27
4N28
sot90b
optocoupler 4n25
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 4N25 4N25A 4N26 4N27 4N28 6-P in D IP O p to is o la to rs Transistor Output These devices co n sist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
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4N25A
Abstract: No abstract text available
Text: Optoisolator Specifications 4N25, 4N25A, 4N26, 4N27, 4N28 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor MIN. T h e 4 N 2 5 , 4N 25A , 4 N 2 6 , 4 N 2 7 , 4 N 2 8 d e v ic e s c o n s is t o f a g a lliu m a rs e n id e in fra re d e m itt in g d io d e c o u p le d w ith a s ilic o n p h o to t r a n s is to r
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4N25A,
4N25-4N28
4N25A
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4N25 4N25A 4N26 4N27 4N28
Abstract: No abstract text available
Text: QT Optoelectronics SEMICONDUCTOR TECHNICAL DATA TO VDE UL & CSA •ì SET SEMKO DEMKO NEMKO BABT Glob al Optoi solator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor
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4N25/A,
4N25A
0884requirements,
4N25/D
4N25 4N25A 4N26 4N27 4N28
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04n25
Abstract: 4n272
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE Ul cal ® C SA SETI SEMK0 D EM KO BS 4N 25* 4N25A * 4N 26* 4N27 4N28 BABT NEMKO 6-Pin DIP Optoisolators Transistor Output CTR = 20% Min] The 4N25/A, 4 N 2 6 ,4 N 2 7 and 4N28 devices consist of a gallium arsenide infrared
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4N25/A,
4N25A
30A-04
4N25A,
04n25
4n272
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