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Littelfuse Inc IXFK24N100Q3 MOSFET N-CH 1000V 24A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK24N100Q3	Tube	1,810		1	1 $25.63 10 $25.63 100 $17.8668 1000 $17.8668 10000 $17.8668	Buy Now
RS	IXFK24N100Q3	Bulk		8 Weeks	25	1 - 10 - 100 $27.63 1000 $27.63 10000 $27.63	Get Quote
Littelfuse Inc IXFA4N100Q MOSFET N-CH 1000V 4A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFA4N100Q	Tube	900		1	1 $8.65 10 $8.65 100 $8.65 1000 $4.59712 10000 $4.59712	Buy Now
Newark	IXFA4N100Q	Bulk			1	1 $8.48 10 $8.48 100 $5.37 1000 $4.9 10000 $4.9	Buy Now
RS	IXFA4N100Q	Bulk		8 Weeks	50	1 - 10 - 100 $7.11 1000 $7.11 10000 $7.11	Get Quote
Littelfuse Inc IXFX24N100Q3 MOSFET N-CH 1000V 24A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFX24N100Q3	Tube	300		300	1 - 10 - 100 - 1000 $17.718 10000 $17.718	Buy Now
Newark	IXFX24N100Q3	Bulk			300	1 - 10 - 100 - 1000 $18.57 10000 $18.57	Buy Now
Littelfuse Inc IXFR24N100Q3 MOSFET N-CH 1000V 18A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR24N100Q3	Tube	67		1	1 $20.1 10 $20.1 100 $20.1 1000 $20.1 10000 $20.1	Buy Now
Newark	IXFR24N100Q3	Bulk			300	1 - 10 - 100 - 1000 $21.07 10000 $21.07	Buy Now
RS	IXFR24N100Q3	Bulk		8 Weeks	30	1 - 10 - 100 $31.09 1000 $31.09 10000 $31.09	Get Quote
Littelfuse Inc IXFR4N100Q MOSFET N-CH 1000V 3.5A ISOPLS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR4N100Q	Tube			300	1 - 10 - 100 - 1000 $6.70863 10000 $6.70863	Buy Now
Newark	IXFR4N100Q	Bulk			300	1 - 10 - 100 - 1000 $7.03 10000 $7.03	Buy Now
RS	IXFR4N100Q	Bulk		8 Weeks	30	1 - 10 - 100 $10.38 1000 $10.38 10000 $10.38	Get Quote
Ozdisan Elektronik	IXFR4N100Q					1 $14.81854 10 $14.81854 100 $13.8491 1000 $13.8491 10000 $13.8491	Get Quote

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4N100Q Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
125OC Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	PDF	4N100Q O-220 Figure10. 125OC 125OC
4n100 Abstract: IXFH4N100Q 4N100Q IXFR4N100Q Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 4n100 4N100Q IXFR4N100Q
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	4N100Q O-247 Figure10. 125OC
4N100Q Abstract: 125OC Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	4N100Q O-247 125OC 728B1 123B1 728B1 065B1 125OC
IXFH4N100Q Abstract: IXFR4N100Q Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM	Original	PDF	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 123B1 728B1 065B1 IXFR4N100Q
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V ID25 = 4 A RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-220) O-220 O-263 4N100Q 4N100Q O-220 Figure10. 125OC
125OC Abstract: 4N100Q Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V = 4A ID25 RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	4N100Q O-220 125OC 728B1 123B1 728B1 065B1 125OC 4N100Q
Untitled Abstract: No abstract text available Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V ID25 = 4A RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-220) O-220 O-263 4N100Q 4N100Q O-220 O-26oltage Figure10.
IXFR4N100Q Abstract: IXFH4N100 ll1000 Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	ISOPLUS247TM 4N100Q 200ns IXFH4N100 IXFR4N100Q ll1000
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-247 O-268 4N100Q Figure10. 125OC
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 2.8 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-247 O-268 4N100Q O-268 Figure10. 125OC
4N100Q Abstract: 125OC Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	4N100Q O-247 Figure10. 125OC 125OC
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 4N100Q IXFT 4N100Q V DSS ^D25 D D S o n = 1000 V 4A = 2.8 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQ , Highdv/dt Symbol TestConditions Maximum Ratings V DSS	OCR Scan	PDF	4N100Q -247A

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