Yamaha YDA
Abstract: YDA144 qfn20 power POWER AMPLIFIER CIRCUIT DIAGRAM 10000 PD25 QFN20 RB161VA-20 snubber circuit DDP 2000 Po-1230
Text: YDA144 D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144 D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144 has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of
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YDA144
YDA144
QFN20
Yamaha YDA
qfn20 power
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
PD25
RB161VA-20
snubber circuit
DDP 2000
Po-1230
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DIGITAL AUDIO POWER AMPLIFIER
Abstract: No abstract text available
Text: YDA144 D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144 D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144 has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of
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YDA144
YDA144
levelA144
QFN20
DIGITAL AUDIO POWER AMPLIFIER
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YDA144B
Abstract: yamaha d85 YDA144B-QZ Yamaha YDA QFN20 RB161VA-20 RB550VA-30 YDA144B-PZ WL-CSP-16 YDA144
Text: YDA144B D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144B D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144B has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of
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YDA144B
YDA144B
QFN20
WLCSP16
yamaha d85
YDA144B-QZ
Yamaha YDA
RB161VA-20
RB550VA-30
YDA144B-PZ
WL-CSP-16
YDA144
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4N37A
Abstract: 4n36 PE-50 N364
Text: YtHLdtPtyJMKtKii] electronic 4N 35 • 4N 36 • 4N 37 Creative Technologies Optically Coupled Isolators C onstruction: Emitter: GaAs IR Emitting Diode Detector: Silicon NPN Epitaxial Planar Phototransistor A pp licatio n s: Galvanically separated circuits, non-interacting switches
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E-76414
4N37A
4n36
PE-50
N364
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GE 4N35
Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
IEC204/VDE0113,
VDE0160,
VDE0832LSE
30A-02
GE 4N35
4n35 optoisolator
motorola 4n35
4N36
Control 4N35
4N35
VDE0160
VDE0832
VDE0833
C4N35
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ac1243
Abstract: No abstract text available
Text: Ü b, „ mÊfr '¿iÊk. ''-!r ÿ S - : PHOTOTRANSISTOR OPTOCOUPLERS "•‘•Kr#3" OPTOELECIHOmCS 3 4N25 4N27 4N26 4N28 DESCRIPTION PACKAGE DIMENSIONS t The 4N 25, 4N 26 , 4N 27, and 4N 28 series of optocouplers have an NPN silicon planar phototransistor optically
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DIMENSIONSC1296A
ac1243
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Motorola 4N35
Abstract: 4n36 motorola
Text: MOTOROLA Order this document by 4N35/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL CSA ® SETI SEM K O DEMKO NEMKO BABT G lobalO ptoisolator 6-P in DIP Optoisolators Transistor Output 4N 35* 4N 36 4N 37 [C T R = 100% Min] T he 4N 35, 4N 36 and 4 N 3 7 d e vice s co n sist o f a ga llium arsenide infrared
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4N35/D
Motorola 4N35
4n36 motorola
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Untitled
Abstract: No abstract text available
Text: G E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N 25 , 4N 26, 4N 27 , and 4 N 2 8 series of optocouplers ' t t H 6.86 MAX B10 w I Πcoupled to a gallium arsenide diode. _ i _ 8.89 8.38 have an NPN silicon planar phototransistor optically
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I2-54!
C1685
C1296A
74bbfl51
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p4n40
Abstract: rfm4n
Text: m R FM 4N 35/4N 40 R FP4N 35/4N 40 Ha r r is N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Packages Features T0-204AA • 4A, 350V and 400V • r DS on = 2 n • SOA is P o w e r-D issip atio n Lim ited DRAIN SOURCE f (FLANGE) • Nanosecond S w itching Speeds
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35/4N
T0-204AA
RFM4N35
RFM4N40
RFP4N35
RFP4N40
p4n40
rfm4n
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a4n25
Abstract: C1681 C1685 C1682 IC07 C1685 transistor transistor c1684 TRANSISTOR C1685 Control 4N25 4N26
Text: [ s O PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION ft Æ Æ T h e 4N25, 4N26, 4N 27, and 4N 28 se rie s of op tocouplers have an NPN silicon planar phototransistor optically co u pled to a gallium arsen id e diode.
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ST1603A
c2079
E90700
C1685
C1296A
C1294
a4n25
C1681
C1685
C1682
IC07
C1685 transistor
transistor c1684
TRANSISTOR C1685
Control 4N25
4N26
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4N29
Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 29 4N29A 4N30 4N 31 4N32 4N32A 4N33 6 -P in D IP O p to is o la to rs Darlington Output Each device consists o f a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon photodarlington detector.
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E54915
IEC380/VDE08CI6,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
30A-02
Y145M,
4N29
4N29A
VDE0160
VDE0832
VDE0833
4N32-4N32A-4N33
7500 IC 14 PIN
4n32
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4N24A
Abstract: 4N22A 4N23A JANTXV-4N22A
Text: Product Bulletin 4N22AJAN September 1996 optek Optically Coupled Isolators Types 4N22A , 4N23A , 4N24A , JANTX, JA N TX V -4N 22A , 4N23A , 4N 24A • TX and TXV versions are processed to Ml L-PRF-19500/486 • 1 kV electrical isolation • Base contact is provided for
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4N22AJAN
4N22A,
4N23A,
4N24A,
JANTXV-4N22A,
4N24A
L-PRF-19500/486
4N23A
4N24A
4N22A
JANTXV-4N22A
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4N60
Abstract: 4N60S ssp4n50 40 gd 4n mosfet 4n60
Text: SSP4N 55/4N 60 SSH4N55/4N 60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
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55/4N
SSH4N55/4N
O-220
SSP4N55
SSH4N55
SSP4N60
SSH4N60
4N60
4N60S
ssp4n50
40 gd 4n
mosfet 4n60
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4N2S
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA «1 <0. <§> ® ® ® VDE UL CSA SETI SEMKO DEMKO NEMKO SABT GlobelOptolsolator 6-Pin DIP Optolsolators Transistor Output 4N 25* 4N25A* 4N 26* 4N27 4N28 [CTR s 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
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4N25/A,
4N25A*
4N25A
10mA--
4N2S
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4N25V
Abstract: 4N25GV 4N25VS 4N35V tcl tv 21 schematic diagram MARKING 611 OPTOCOUPLER IC AL 03 tcl tv 21" schematic diagram
Text: Temic S e m i c o n d u c t o r s 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description T he 4N 25V (G )/ 4N 35V (G ) series consists o f a phototransistor optically coupled to a gallium arsenide
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4N25V
4N35V
4N25Vi
03-Jun-96
001fl33fl
4N25GV
4N25VS
tcl tv 21 schematic diagram
MARKING 611 OPTOCOUPLER
IC AL 03
tcl tv 21" schematic diagram
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Untitled
Abstract: No abstract text available
Text: STB4NB80 N - CHANNEL 800V - 3G - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STB 4N B80 S TB 4N B80FP • . . . . 800 V 800 V RDS on 3.3 3.3 a a Id 4 A 4 A TYPICAL RDS(on) = 3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STB4NB80
O-220/TO-220FP
B80FP
O-262
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5
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STP4NB50
STP4NB50FP
B50FP
STP4NB50/FP
O-22QFP
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04n25
Abstract: 4n272
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE Ul cal ® C SA SETI SEMK0 D EM KO BS 4N 25* 4N25A * 4N 26* 4N27 4N28 BABT NEMKO 6-Pin DIP Optoisolators Transistor Output CTR = 20% Min] The 4N25/A, 4 N 2 6 ,4 N 2 7 and 4N28 devices consist of a gallium arsenide infrared
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4N25/A,
4N25A
30A-04
4N25A,
04n25
4n272
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4N39T
Abstract: d4n40
Text: Optoisolator Specifications 4N39, 4N40 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES M L L IM E T E R S M IN MAX. M IN 8 38 S' S3 ? 62 PEF The 4N 39 an d 4N 40 co n sist of a g allium arsenide, infrared e m ittin g diode cou p led w ith a lig h t activ ated silico n c o n tro lled 5EiT,ri
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GE 4N35
Abstract: ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A
Text: G E SOLID STATE 01 D E | 3 f l 7 5 Q f l l □Ont.74 1 Optoelectronic Specifications 2$ Photon Coupled Isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — SYtTini Ga As Infrared E m itting Diode & NPN Silicon Photo-D arlington Am plifier T h e G E S o lid S ta te 4N 29 th ru 4N 33 devices co n sist o f a g allium arsen id e
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4N29-4N29A-4N30-4N31
4N32-4N32A-4N33
4N35-37
GE 4N35
ES1868
4N32-4N32A-4N33
GE 4N33
4N29
4N29A
4N30
4N31
4N32
4N32A
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TP4n100
Abstract: No abstract text available
Text: *57 SGS-THOMSON TYPE S TP 4N 100 S TP 4N 100FI • . . ■ ■ . ■ S T P 4 N 1 oo S T P 4 N 1 OOFI iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS(on) Id 1000 V 1000 V < 3.5 a < 3.5 a 4 A 2.2 A TYPICAL Ros(on) = 3.1 AVALANCHE RUGGED TECHNOLOGY
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100FI
STP4N100
TP4n100
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MTP4N05L
Abstract: mtp4n05
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 4N 05L M TP 4N 06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r IM-Channel Enhancem ent-M ode S ilicon G ate TM O S TM O S POWER FETs LOGIC LEVEL 4 AMPERES These Logic Level TM O S Power FETs are designed fo r high
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MTP4N05L
mtp4n05
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Opto-isolator
Abstract: No abstract text available
Text: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T he 4N 29 th ro u g h 4N 33 d evices c o n sis t o f a g a lliu m a rsen id e infrared e m ittin g dio d e co u p le d w ith a silic o n p h o to -D a rlin g to n am p lifier in a
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4N29A,
4N32A,
E51868
4N29A
0110b
4N29-4N33
Opto-isolator
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Untitled
Abstract: No abstract text available
Text: S T P 4 N 100 S T P 4 N 100 FI ¿57 S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP 4N 100 S TP 4N 100FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4 A 2.2 A TYPICAL RDS(on) = 3.1 Q. AVALANCHE RUGGED TECHNOLOGY
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100FI
al100/FI
ISQWATT220
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