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Alliance Memory Inc AS4C1M16S-7TCN IC DRAM 16MBIT PAR 50TSOP II
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AS4C1M16S-7TCN	Tray	176		1	1 $2.49 10 $2.214 100 $2.06175 1000 $1.81526 10000 $1.60627	Buy Now
Avnet Americas	AS4C1M16S-7TCN	Tray		12 Weeks	117	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AS4C1M16S-7TCN		194			1 $2.37 10 $1.98 100 $1.98 1000 $1.59 10000 $1.43	Buy Now
Newark	AS4C1M16S-7TCN	Bulk	105		1	1 $1.3 10 $1.3 100 $1.3 1000 $1.3 10000 $1.3	Buy Now
TME	AS4C1M16S-7TCN				1	1 $2.15 10 $2.15 100 $2.15 1000 $1.61 10000 $1.52	Get Quote

Karl Kruse GmbH & Co KG	AS4C1M16S-7TCN		83,518			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	AS4C1M16S-7TCN			13 Weeks	117	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Alliance Memory Inc AS4C1M16S-6TCN IC DRAM 16MBIT PAR 50TSOP II
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AS4C1M16S-6TCN	Tray	117		1	1 $1.92 10 $1.706 100 $1.58825 1000 $1.39855 10000 $1.375	Buy Now
Avnet Americas	AS4C1M16S-6TCN	Tray		12 Weeks	117	1 - 10 - 100 - 1000 $1.386 10000 $1.386	Buy Now
Mouser Electronics	AS4C1M16S-6TCN		370			1 $1.92 10 $1.59 100 $1.59 1000 $1.39 10000 $1.37	Buy Now
Newark	AS4C1M16S-6TCN	Bulk			117	1 $2.2 10 $2.2 100 $2.2 1000 $2.2 10000 $2.1	Buy Now
TME	AS4C1M16S-6TCN		91		1	1 $2.4 10 $2.27 100 $2.15 1000 $1.83 10000 $1.83	Buy Now

Karl Kruse GmbH & Co KG	AS4C1M16S-6TCN		1,318			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	AS4C1M16S-6TCN			13 Weeks	117	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Alliance Memory Inc AS4C1M16S-6TIN IC DRAM 16MBIT PAR 50TSOP II
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AS4C1M16S-6TIN	Tray	61		1	1 $2.78 10 $2.472 100 $2.301 1000 $2.0259 10000 $1.79259	Buy Now
Avnet Americas	AS4C1M16S-6TIN	Tray		12 Weeks	117	1 - 10 - 100 - 1000 $1.575 10000 $1.575	Buy Now
Mouser Electronics	AS4C1M16S-6TIN		58			1 $2.33 10 $1.86 100 $1.86 1000 $1.63 10000 $1.56	Buy Now
Newark	AS4C1M16S-6TIN	Bulk			117	1 $2.5 10 $2.5 100 $2.5 1000 $2.5 10000 $2.4	Buy Now
Bristol Electronics	AS4C1M16S-6TIN		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TME	AS4C1M16S-6TIN				1	1 $2.51 10 $2.35 100 $2.1 1000 $1.61 10000 $1.61	Get Quote
Karl Kruse GmbH & Co KG	AS4C1M16S-6TIN		103,638			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	AS4C1M16S-6TIN			13 Weeks	117	1 - 10 - 100 - 1000 - 10000 -	Buy Now
OMRON Industrial Automation E2V-X4C1-M1 SENSOR PROX INDUCTIVE 4MM CYLIND
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	E2V-X4C1-M1	Box			1	1 $369.45 10 $369.45 100 $369.45 1000 $369.45 10000 $369.45	Buy Now
OMRON Industrial Automation E2EM-X4C1-M1 SENSOR PROX INDUCTIVE 4MM CYLIND
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	E2EM-X4C1-M1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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4C1M1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
4C1M16E5 Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1 Text: AS4LC1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time	Original	PDF	AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) 4C1M16E5 AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1
Untitled Abstract: No abstract text available Text: H igh Performance 1MX16 CMOS DRAM •■ II 4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0	OCR Scan	PDF	1MX16 AS4C1M16E0 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) AS4LC1M16E0 AS4LC1M16EO-70JC 42-pm 1M16E0
16F5 Abstract: 4c1m16 Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh	OCR Scan	PDF	16E0-60) ZDDQ15 ZDDQ11 ZDDQ10 A54C1M16FS 42-pin -60JC AS4C1M16F5-50JC AS4C1M16F5 16F5 4c1m16
4lc1m16e5-6 Abstract: No abstract text available Text: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al	OCR Scan	PDF	16E5-60) 4LC1M16E5-60) 42-pin AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC -60TC 42-pin 1M16E0 4lc1m16e5-6
4LC1M16E5 Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5 Text: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh	OCR Scan	PDF	AS4C1M16E5 AS4LC1M16E5 4C1M16E5-60) 4LC1M16E5-60) 42-pin 4C1M16E5) 44/50-pin 4LC1M16E5) AS4C1M16E5) AS4C1M16E5 4LC1M16E5 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A 4lc1m16e5-60 AS4LC1M16E5
Untitled Abstract: No abstract text available Text: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write	OCR Scan	PDF	16E0-60) 42-pin 71pS4C AS4C1M16E5-60JC 1M16E0 42-pin
T835 Abstract: No abstract text available Text: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e	OCR Scan	PDF	AS4C1M16E0 AS4LC1M16E0 16E0-60JC I6E0-60JC 42-pin 16E0-70JC IM16E0 T835
4LC1M16 Abstract: 4C1M16 AS4CIM16 IS3015 Text: H ig h P e r fo r m a n c e 1 M X 16 CM OS DRAM A S 4 C 1 M I6 E 0 A S 4 L C I M 1 6EÓ 1M X J 6 CM OS EDO DRAM Prelim inary inform ation Features • R ead-m odify-w rite • TTL-com patible, three-state I /O • JEDEC standard package and pin o u t - 400 mil, 42-pin SOJ	OCR Scan	PDF	4C1M16EO-SO) 42-pin 4C1M16E0) I/015 eiOG3441 AS4C1M16E0 AS4LC1M16E0 AS4C1M16E0-60JC 4LC1M16 4C1M16 AS4CIM16 IS3015
Untitled Abstract: No abstract text available Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0	OCR Scan	PDF	AS4LC1M16EÃ 42-pin 4C1M16EO-SO)
4C1M16 Abstract: 1MX16 4LC1M16 Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout	OCR Scan	PDF	1MX16 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) 6E0-50 4C1M16E0-60 6E0-70 AS4C1M16E0 4C1M16 4LC1M16
AS4C1M16ES Abstract: 4C1M16E5 LR 3441 1MX16 AS4C1M16E5 LMZ 9 4C1M16E5-60 Text: H ig h P e r fo r m a n c e lM x 16 CM OS DRAM » II A S4C 1M 16E 5 I lM x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cydes, 16 ms refresh interval - RAS-only o r CAS-before-RAS refresh	OCR Scan	PDF	AS4C1M16E5 1MX16 4C1M16E0-60) 42-pin 12S4C1M16E5 Capacitance15 42-pin AS4C1M16E5-60JC 1M16E0 AS4C1M16ES 4C1M16E5 LR 3441 AS4C1M16E5 LMZ 9 4C1M16E5-60
4LCIM16E5-50 Abstract: 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000 Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 w ords x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout	OCR Scan	PDF	42-pin 4C1M16E5) 50-pin 4LC1M16E5) 4C1M16E5-60) 4LC1M16E5-60) AS4C1M16E5) AS4LC1M16E5) -60JC 16E5-50JC 4LCIM16E5-50 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000
Untitled Abstract: No abstract text available Text: H ig h P e r fo r m a n c e 1M X 16 CM OS DRAM A S4C 1M 16F5 h I II l M x 1 6 C M O S D R A M fa st paae m od e Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RA S-only o r CAS-before-RAS re fresh	OCR Scan	PDF

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4C1M1 Search Results

4C1M1 Price and Stock

Alliance Memory Inc AS4C1M16S-7TCN

Alliance Memory Inc AS4C1M16S-6TCN

Alliance Memory Inc AS4C1M16S-6TIN

OMRON Industrial Automation E2V-X4C1-M1

OMRON Industrial Automation E2EM-X4C1-M1

4C1M1 Datasheets Context Search

4C1M16E5

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16F5

4lc1m16e5-6

4LC1M16E5

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T835

4LC1M16

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4C1M16

AS4C1M16ES

4LCIM16E5-50

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