Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
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HYM532100A
32-blt
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
M532100A
1CC03-01-FEB94
4b75DBB
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Untitled
Abstract: No abstract text available
Text: HY5116400 Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY5116400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116400
1AD02-10-MAV94
4b750fifi
HY5116400JC
HY5116400UC
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hy51v18164b
Abstract: No abstract text available
Text: -HYUNDAI HYM5V64124A Q-Series SO DIMM 1M x 64-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V64124Ais a 1M x 64-bit ED O mode C M O S DRAM module consisting of four HY51V18164B in 42/42 pin SO J or 44/50 pin TSOP-II and one 2048 bit EEPR O M on a 144 Zig Zag Dual pin glass-epoxy printed circuit
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HYM5V64124A
64-bit
HYM5V64124Ais
HY51V18164B
HYM5V64124AQG/ATQG/ASLQG/ASLTQG
1CE16-10-APR96
HYM5V64124AQG
HYM5V64124ASLQG
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY53C256 Series SEMICONDUCTOR 256K X 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynam ic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C256
300mil
330mil
01-20-APR93
4b75DBB
0DD131S
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