489AA
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 10 PIN FLIP−CHIP CASE 489AA−01 ISSUE A DATE 04 MAY 2004 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS.
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489AA-01
489AA
489AA
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Untitled
Abstract: No abstract text available
Text: NLAS4685 Pr oduct Preview Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring
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NLAS4685
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489AA
NLAS4717
BAT54
NLAS4717
Micro10
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485AG
Abstract: No abstract text available
Text: CHAPTER 2 Case Outlines and Package Dimensions http://onsemi.com 421 CASE OUTLINES AND PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE M 1 DATE 07 JUN 2004 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER.
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318G-02
004ON.
485AG
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NLAS4717EPMTR2G
Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717EP
NLAS4717EP
WQFN-10:
WQFN-10
488AQ
NLAS4717EP/D
NLAS4717EPMTR2G
MAX4717
NLAS4717EPFCT1G
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power tmos
Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
Text: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003 SCILLC, 2003 Previous Edition 2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
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Aug-2003
power tmos
936G
PR 751S
K1 MARK 6PIN SOT-363
carrier chiller
mc10116
MC10H210
mmsf5n03hd
0j sod-523
CASERM
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555C
Abstract: MAX4685 NLAS4685 T-014 489AA
Text: NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.8 W, for the Normally Closed (NC) switch and
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NLAS4685
NLAS4685
NLAS4685/D
555C
MAX4685
T-014
489AA
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Untitled
Abstract: No abstract text available
Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and
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NLAS4684
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NLAS4684/D
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Untitled
Abstract: No abstract text available
Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717
Micro10:
NLAS4717/D
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Untitled
Abstract: No abstract text available
Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and
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NLAS4684
NLAS4684/D
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555C
Abstract: MAX4685 NLAS4685 NLAS4685FCT1 NLAS4685FCT1G
Text: NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.8 W, for the Normally Closed (NC) switch and
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NLAS4685
NLAS4685
NLAS4685/D
555C
MAX4685
NLAS4685FCT1
NLAS4685FCT1G
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MAX4717
Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717
NLAS4717
Micro10:
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NLAS4717/D
MAX4717
NLAS4717FCT1
NLAS4717FCT1G
NLAS4717MR2
NLAS4717MR2G
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MAX4717
Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717EP
NLAS4717EP
Micro10:
NLAS4717EP/D
MAX4717
NLAS4717EPFCT1G
489AA
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NLAS4684MR2G
Abstract: 555C DFN10 MAX4684 NLAS4684 NLAS4684MR2
Text: NLAS4684 Ultra-Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.5 W, for the Normally Closed (NC) switch, and
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NLAS4684
NLAS4684
NLAS4684/D
NLAS4684MR2G
555C
DFN10
MAX4684
NLAS4684MR2
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Untitled
Abstract: No abstract text available
Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and
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Untitled
Abstract: No abstract text available
Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.
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Micro10:
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Untitled
Abstract: No abstract text available
Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717EP
Micro10:
4717EP
4717E
Micro10
NLAS4717EP/D
Microbump-10
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MAX4717
Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717EP
NLAS4717EP
WQFN-10:
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65not
NLAS4717EP/D
MAX4717
NLAS4717EPFCT1G
NLAS4717EPMTR2G
4717EP
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A1468-4
Abstract: No abstract text available
Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and
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NLAS4684FCT1
NLAS4684FCT1G
NLAS4684MNR2
NLAS4684MNR2G
A1468-4
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4717EP
Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717EP
NLAS4717EP
WQFN-10:
4717EP
NLAS4717EP/D
4717EP
MAX4717
NLAS4717EPFCT1G
NLAS4717EPMTR2G
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555C
Abstract: MAX4684 NLAS4684 NLAS4684FCT1 NLAS4684FCT1G 4684
Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and
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NLAS4684
NLAS4684
Microbump-10
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NLAS4684/D
555C
MAX4684
NLAS4684FCT1
NLAS4684FCT1G
4684
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Untitled
Abstract: No abstract text available
Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and
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Untitled
Abstract: No abstract text available
Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and
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NLAS4684
Microbump-10
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NLAS4684/D
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Untitled
Abstract: No abstract text available
Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717
Micro-10:
NLAS4717/D
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Untitled
Abstract: No abstract text available
Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and
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NLAS4684
NLAS4684/D
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