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    C47V5864

    Abstract: 817 CN C47V GF53
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> 47V5864 5 . 8 - 6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FC 47V5864 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 5.8 ~ 6 .4 G H z


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    PDF MGFC47V5864 47V5864 47dBm transm30 C47V5864 817 CN C47V GF53