SHD114436
Abstract: SHD114436A SHD114436B
Text: SENSITRON SEMICONDUCTOR SHD114436 SHD114436A SHD114436B TECHNICAL DATA DATA SHEET 4512, REV. A POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
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SHD114436
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SHD114436B
SHD114436
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SHD114436B
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200v 3A schottky
Abstract: SHD114436 SHD114436A SHD114436B
Text: SENSITRON SEMICONDUCTOR SHD114436 SHD114436A SHD114436B TECHNICAL DATA DATA SHEET 4512, REV. - POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
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SHD114436
SHD114436A
SHD114436B
200v 3A schottky
SHD114436
SHD114436A
SHD114436B
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD114436 SHD114436A SHD114436B TECHNICAL DATA DATA SHEET 4512, REV. B POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current
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SHD114436
SHD114436A
SHD114436B
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VMIVME-4512
Abstract: Panduit 120-964-455 4512 VMIVME cpu vmivme45 VMIVME
Text: VMIVME-4512 16-Channels 12-Bit Analog I/O Board Product Manual 256 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA (800) 322-3616 w Fax: (256) 882-0859 500-004512-000 Rev. U (256) 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA
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VMIVME-4512
16-Channels
12-Bit
VMIVME-4512
16-Channel
Panduit
120-964-455
4512
VMIVME cpu
vmivme45
VMIVME
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M34512M2-XXXFP
Abstract: 4512 Group M34512M2 M34512M4 W32 MARKING M34512M4-XXXFP PU01 TDA 88 diode T 4512 H
Text: MITSUBISHI MICROCOMPUTERS RY A N IMI L E PR 4512 Group . ion cat cifi ct to e p je ls fina re sub a ot a is n limits s i Th etric m ice: Not e para m o S nge. cha SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION ●Timers Timer 1 . 8-bit timer with a reload register
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Untitled
Abstract: No abstract text available
Text: MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 18 22 13 17 21 6 4 2 5 9, 24 3 1 8 11, 12 15, 16 19, 20 NTC 7 E72873 Features IGBTs Symbol
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E72873
B25/85
20070912a
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v4331
Abstract: NTC 4,7 NTC M4 igbt sixpack 4512 diode
Text: MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 18 22 13 17 21 6 4 2 5 9, 24 3 1 8 11, 12 15, 16 19, 20 NTC 7 Features Symbol Conditions Maximum Ratings
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B25/85
v4331
NTC 4,7
NTC M4
igbt sixpack
4512 diode
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FMB-29
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. FMB-29 1. Scope The present specifications shall apply to an FMB-29. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040512 1／5
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FMB-29
FMB-29.
UL94V-0
FMB29
FMB-29
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60EPS08
Abstract: 60EPS12 60EPS16
Text: 2002-02-20 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-239-48 60EPS08 diodTO-247 70-239-55 60EPS12 diodTO-247 Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE
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60EPS08
diodTO-247
60EPS12
I2122
60EPS.
availabl17)
O-247AC
60EPS16
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60EPS08
Abstract: 60EPS12 60EPS16
Text: Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A IFSM = 950A VRRM 800 to 1600V Description/Features The 60EPS. rectifierSAFEIRseries has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.
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I2122
60EPS.
O-247AC
60EPS08
60EPS12
60EPS16
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60EPS12
Abstract: P035H I2176
Text: Bulletin I2176 rev A 07/06 SAFEIR Series 60EPS.PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 30A IFSM = 950A VRRM = 800 to 1200V Description/ Features The 60EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate
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60EPS.
O-247AC
60EPS12
P035H
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Untitled
Abstract: No abstract text available
Text: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4714
AO4714
Figure10:
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I2122
Abstract: 035H 60EPS08 60EPS12 60EPS16 "RECTIFIER DIODE"
Text: Bulletin I2122 rev. C 10/05 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1.1V @ 60A IFSM = 950A VRRM = 800 to 1600V Description/ Features Major Ratings and Characteristics Characteristics Values Units 60 A VRRM 800 to 1600 V Typical applications are in input rectification and these
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60EPS.
O-247AC
035H
60EPS08
60EPS12
60EPS16
"RECTIFIER DIODE"
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p035h
Abstract: 60EPS16
Text: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate
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60EPS16PbF
O-247AC
p035h
60EPS16
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SMPS 30v 20a
Abstract: No abstract text available
Text: AO4714 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4714
AO4714
Figure10:
SMPS 30v 20a
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diode avalanche DSA
Abstract: D0203AB DIODE DSA 18 diode 35-12 diode avalanche DSA 35-18 A DSAI35 diode T 3512 2x55-12A DSI 2*55-16A DSAI35-18
Text: Rectifier Diodes lFAV = 48 - 160 A, Standard Diodes DS. , Avalanche Diodes (DSA.) v RRM Type P p p V A kW A A 10 ms V m °C K/W K/W Package style b 2 Outline drawings d) ii_ on page 91-100 35-08 A 35-12 A 800 1200 49 - 80 650 0.85 4.5 180 1.05 0.2 18 DSA 35-12 A
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ISOPLUS247TM
DSAI35-12
DSAI35-16
DSAI35-18
D0-203AB
DSAI75-12
DSAI75-16
DSAI75-18
2x55-12A
2x55-16A
diode avalanche DSA
D0203AB
DIODE DSA 18
diode 35-12
diode avalanche DSA 35-18 A
DSAI35
diode T 3512
DSI 2*55-16A
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PS-4512 diode
Abstract: T 4512 H diode ps 4512 diode diode T 4512 H
Text: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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O-240
65------------r
PS-4512 diode
T 4512 H diode
ps 4512 diode
diode T 4512 H
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T 3512 H diode
Abstract: ASEA fast thyristor ASEA thyristor diode T 3512 H ABB thyristor modules E 72873 ASEA abb diode ABB thyristor 5 TO 48 THYRISTOR FAST SWITCHING ABB Thyristor asea
Text: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-M odule D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor m odules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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MSS45-08
MSS45-09
O-240
T 3512 H diode
ASEA fast thyristor
ASEA thyristor
diode T 3512 H
ABB thyristor modules
E 72873
ASEA abb diode
ABB thyristor 5
TO 48 THYRISTOR FAST SWITCHING
ABB Thyristor asea
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diode avalanche DSA
Abstract: diode avalanche DSA 42 diode avalanche DSA 25 8 diodes DSA 6 A 1712 25-16AT 2X17 10-32-UNF-2A
Text: Rectifier Diodes lFAV = 2 - 45 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type ^RR M *FAV V 100°C A 2.3 p ^FRMS 1-12 D 1200 DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 1200 1600 1800 DS DS 2-08 A 2-12 A 800 1200 DSA 2-12 A DSA 2-16 A DSA 2-18 A 1200 1600
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O-220AB
O-220
O-268
ISOPLUS220TM
10-32UNF2A
diode avalanche DSA
diode avalanche DSA 42
diode avalanche DSA 25 8
diodes DSA 6
A 1712
25-16AT
2X17
10-32-UNF-2A
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Untitled
Abstract: No abstract text available
Text: Bulletin 12122 rev. A 07/97 International IS R Rectifier SAFE/R Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A * 'fsm = 950A VR RM800 to 1600V RRM Description/Features The 60EPS. rectifier SAFE/Rsexies has been optimized for very low forward voltage drop, with moderate leakage.
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60EPS.
VRR07/97
S5452
QQ3Q21S
O-247AC
0D3G21b
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T 4512 H diode
Abstract: diode T 4512 H diode rectifier p 600
Text: Bulletin 12122 rev. A 07/97 International TOR Rectifier SA FElR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A 'f s m = 950A VRRM800 to 1600V Description/Features The 60EPS. rectifierSA FE //?series has been optimized for very low forward voltage drop, with moderate leakage.
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60EPS.
800tig.
O-247AC
T 4512 H diode
diode T 4512 H
diode rectifier p 600
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ds 35-12 e
Abstract: 4508A DSA117-16 dsai17-12a DSAI11016F A 3150 V DSAI110
Text: Rectifier Diodes 'FA V = 2 - 77 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type FAV FSM T =100°C 45°C 10 ms New DS 1-12 D DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 2-08 A DS 2-12 A DSA 2-12 A DSA 2-16 A DSA 2-18 A DSP 8-08 A DSP 8-12 A DSP 8-08 AS OSP 8-12 AS
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DSAI17-12
DSA117-16
OSAI35-12
DSAI35-16
DSAI35-18
ASAI75-18B
D0-205AC
D0-30)
DSAI110-12
DSAI110-16
ds 35-12 e
4508A
dsai17-12a
DSAI11016F
A 3150 V
DSAI110
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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