p035h
Abstract: 60EPS16
Text: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate
|
Original
|
I2185
60EPS16PbF
60EPS16PbF
O-247AC
p035h
60EPS16
|
PDF
|
DIODE 60 A
Abstract: 60EPS16
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
|
Original
|
60EPS16PbF
O-247AC
18-Jul-08
DIODE 60 A
60EPS16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according
|
Original
|
VS-60EPS16PbF,
VS-60EPS16-M3
JEDEC-JESD47
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according
|
Original
|
VS-60EPS16PbF,
VS-60EPS16-M3
JEDEC-JESD47
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2
|
Original
|
VS-60EPS16PbF,
VS-60EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
|
Original
|
60EPS16PbF
O-247AC
12-Mar-07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
|
Original
|
60EPS16PbF
O-247AC
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Designed and JEDEC-JESD47 2 qualified according to • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-247AC modified 1 Cathode • Typical applications are in input rectification and these
|
Original
|
VS-60EPS16PbF
JEDEC-JESD47
2002/95/EC
O-247AC
VS-60EPS16PbF
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate
|
Original
|
I2185
60EPS16PbF
60EPS16PbF
08-Mar-07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2
|
Original
|
VS-60EPS16PbF,
VS-60EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
|
Original
|
60EPS16PbF
O-247AC
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 TO-247AC modified
|
Original
|
VS-60EPS16PbF,
VS-60EPS16-M3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2
|
Original
|
VS-60EPS16PbF,
VS-60EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2
|
Original
|
VS-60EPS16PbF,
VS-60EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
|
4512 diode
Abstract: No abstract text available
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
|
Original
|
60EPS16PbF
O-247AC
18-Jul-08
4512 diode
|
PDF
|
vishay 1N4007 DO-214AC
Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . V I S H AY I N T E R T E C H N O L O G Y, I N C . 整流器 整流器 选型指南 肖特 基 整 流 器 超快 恢 复整流器 标 准和快 速恢 复整流器 桥式整流器 w w w. v i s h a y. c o m
|
Original
|
VMN-SG2178-1111
vishay 1N4007 DO-214AC
VS-30BQ060PbF
40MT160KPBF
vishay 1N4007 DO-213AB
ss32 control pack
70MT160KPBF
20bq030pbf
430 SBL2040CT
v40150
MBR10T100
|
PDF
|
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
|
Original
|
100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
|
PDF
|
vishay 1N4007 DO-214AC
Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . V I S HAY INTERTE C HNOLO G Y, IN C . diodes RECTIFIERS Selector Guide Bridge Rectifiers Fast Recover y Rectifier s Schottky Rectifiers Standard Rectifiers Ultrafast Recover y Rectifiers w w w. v i s h a y. c o m
|
Original
|
VMN-SG2125-1009
vishay 1N4007 DO-214AC
7 Segment common cathode
MBR360 smd
diode DGP30
05B2S
SMD DIODE UF4007
1N4007 DO-214BA
VS-30BQ100PBF
1N5822 SMD
1N4007 MINI MELF
|
PDF
|