Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V
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RM900DB-90S
20K/kW
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900HC-90S ● IF . 900A ● VRRM . 4500V
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RM900HC-90S
21K/kW
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a3101
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900HC-90S ● IF . 900A ● VRRM . 4500V
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RM900HC-90S
21K/kW
a3101
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V
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RM900DB-90S
20K/kW
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CM900HB-90H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V
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CM900HB-90H
CM900HB-90H
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160nF
Abstract: 4500a u4200 DIM900ESM45-F000
Text: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25831) 4500V 2.9 V 900A 1800A *(measured at the power busbars and not the auxiliary terminals)
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DIM900ESM45-F000
DS5872-1
LN25831)
DIM900ESM45-F000
450ty
160nF
4500a
u4200
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RM900DB-90S
Abstract: CC-124 4500V 1800A
Text: 三菱半導体〈HIGH VOLTAGE DIODE モジュール〉 RM900DB-90S 大電力スイッチング用 絶縁形 High Voltage Diode モジュール RM900DB-90S ¡IF ……………………………………………… 900A ¡VRRM ……………………………………… 4500V
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RM900DB-90S
20K/kW
RM900DB-90S
CC-124
4500V 1800A
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Untitled
Abstract: No abstract text available
Text: 三菱半導体〈HIGH VOLTAGE DIODE モジュール〉 RM900HC-90S 大電力スイッチング用 絶縁形 High Voltage Diode モジュール RM900HC-90S ¡IF ……………………………………………… 900A ¡VRRM ……………………………………… 4500V
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RM900HC-90S
21K/kW
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DFM450NXM45
Abstract: DS5892-1 DS5892 DFM450NXM45-F000 ln2482
Text: DFM450NXM45-F000 Fast Recovery Diode Module DS5892-1.0 October 2006 LN24820 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 900A Rating
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DFM450NXM45-F000
DS5892-1
LN24820)
DFM450NXM45-F000
DFM450NXM45
DS5892
ln2482
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CM400DY-66H
Abstract: 4500v CM900HB-90H diode 900A CM1200HA-34H 2500V. 300A. diodes CM12 cm400du CM800HA-34H cm800hb
Text: Px IGBTs Recommended for new designs 1700V - 6500V 7/3/2003 NF-Series, F-Series, KA-Series Circuit 50A 75A Chopper, Six PAC Dual Buck, Boost 100A 150A 200A 300A 400A 600A CM400HA-34H Dual Dual Single 900A 1200A Ic A CM1200HA-34H Recommended CM100DU-34KA CM150DU-34KA CM200DU-34KA CM300DU-34KA CM400DU-34KA CM600DY-34H
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CM400HA-34H
CM1200HA-34H
CM100DU-34KA
CM150DU-34KA
CM200DU-34KA
CM300DU-34KA
CM400DU-34KA
CM600DY-34H
CM50TU-34KA
CM800DZ-34H
CM400DY-66H
4500v
CM900HB-90H
diode 900A
CM1200HA-34H
2500V. 300A. diodes
CM12
cm400du
CM800HA-34H
cm800hb
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Untitled
Abstract: No abstract text available
Text: DFM450NXM45-F000 Fast Recovery Diode Module Replaces DS5892-1.0 DS5892-2 April 2011 LN28308 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM450NXM45-F000
DS5892-1
DS5892-2
LN28308)
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DFM900NXM45-F000
Abstract: No abstract text available
Text: DFM900NXM45-F000 Fast Recovery Diode Module Replaces DS5887-1.0 DS5887-2 April 2011 LN28310 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM900NXM45-F000
DS5887-1
DS5887-2
LN28310)
DFM900NXM45-F000
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DFM450NXM45-F000
Abstract: No abstract text available
Text: DFM450NXM45-F000 Fast Recovery Diode Module Replaces DS5892-1.0 DS5892-2 April 2011 LN28308 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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PDF
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DFM450NXM45-F000
DS5892-1
DS5892-2
LN28308)
DFM450NXM45-F000
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Untitled
Abstract: No abstract text available
Text: DFM900NXM45-F000 Fast Recovery Diode Module Replaces DS5887-1.0 DS5887-2 April 2011 LN28310 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM900NXM45-F000
DS5887-1
DS5887-2
LN28310)
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160nF
Abstract: DIM900ESM45-F000
Text: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability
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DIM900ESM45-F000
DS5872-1
LN24283)
160nF
DIM900ESM45-F000
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switch transistor
Abstract: No abstract text available
Text: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS
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DIM900ESM45-F000
DS5872-1
LN24743)
DIM900ESM-F000
switch transistor
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Untitled
Abstract: No abstract text available
Text: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.2 November 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS
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DIM900ESM45-F000
DS5872-1
LN24998)
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TOSHIBA IGBT
Abstract: 800 kw Toshiba AC motor MG900GXH1US53 4 kw Toshiba AC motor diode 900A
Text: TOSHIBA MG900GXH1US53 TOSHIBA IGBT TENTATIVE DATA MODULE MG900GXH1US53 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features • High Input Impedance • Enhancement Mode • Electrodes are Isolated from Case EQUIVALENT CIRCUIT
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MG900GXH1US53
25degC)
TOSHIBA IGBT
800 kw Toshiba AC motor
MG900GXH1US53
4 kw Toshiba AC motor
diode 900A
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SGRB000GXH26
Abstract: 4500V 900A GTO thyristor 4500V 4000A
Text: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)
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SGRB000GXH26
SGR3000GXH26)
SGRB000GXH26
4500V 900A
GTO thyristor 4500V 4000A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION 2-03.5 + 0.2 Repetitive Peak Off-State Voltage V d RM = 4500V Note 1 l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77°C)
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SGR3000GXH26
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Untitled
Abstract: No abstract text available
Text: T O S H IB A SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 INVERTER APPLICATION • Unit in mm Repetitive Peak Off-State Voltage Vd r m = 4500V Note 1 R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C) R.M.S Reverse Current
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SGR3000GXH28
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sgr3000gxh28
Abstract: 4500V 900A
Text: TO SHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • Repetitive Peak Off-State Voltage : VDRM“ 4500V Note 1 • R.M.S On-State Current : lT(RMS) = 1200A(Tf=77°C) • R.M.S Reverse Current ; I r (RMS) —900A (Tf=77°C)
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SGR3000GXH28
--900A
sgr3000gxh28
4500V 900A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SGR3500GXH29 TOSHIBA GATE TURN-OFF THYRISTOR LOWER LOSS, REVERSE CONDUCTING TYPE TENTATIVE SGR3500GXH29 INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current R.M.S Reverse Current Peak Turn-Off Current
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SGR3500GXH29
--3500A
--3000A
--30A
600mA
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toshiba gto
Abstract: SGR3000GXH28 GTO thyristor 4500V 4000A GTO 100A 500V 4500V 900A 100a 1000v GTO GTO 10A 500V
Text: TOSHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • • • • • • • Repetitive Peak Off-State Voltage VDRM —4500V Note 1 R.M.S On-State Current lT ( R M S ) = 1200A(Tf=77°C)
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SGR3000GXH28
diGQ/dt-40
toshiba gto
SGR3000GXH28
GTO thyristor 4500V 4000A
GTO 100A 500V
4500V 900A
100a 1000v GTO
GTO 10A 500V
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