CM800HB-50H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V
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CM800HB-50H
012K/W
024K/W
CM800HB-50H
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hvigbt diode
Abstract: Converter for Induction Heating CM800HB-66H M6 transistor
Text: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V
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CM800HB-66H
hvigbt diode
Converter for Induction Heating
CM800HB-66H
M6 transistor
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CM800HB-50H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V
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CM800HB-50H
CM800HB-50H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V
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CM800HB-66H
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CM800HB-66H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM800HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE
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CM800HB-66H
CM800HB-66H
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CM800HB-50H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM800HB-50H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules
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CM800HB-50H
CM800HB-50H
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CM800HB-66H
Abstract: No abstract text available
Text: 三菱半導体〈HVIGBTモジュール〉 CM800HB-66H 大電力スイッチング用 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール 絶縁形 CM800HB-66H ¡IC ……………………………………………… 800A
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CM800HB-66H
012K/W
024K/W
CM800HB-66H
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CM800HB-50H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM800HB-50H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE
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CM800HB-50H
CM800HB-50H
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CM800HB-66H
Abstract: CM800
Text: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V
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CM800HB-66H
012K/W
024K/W
CM800HB-66H
CM800
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CM800HB-50H
Abstract: No abstract text available
Text: 三菱半導体〈HVIGBTモジュール〉 CM800HB-50H 大電力スイッチング用 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール 絶縁形 CM800HB-50H ¡IC ……………………………………………… 800A
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CM800HB-50H
012K/W
024K/W
CM800HB-50H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V
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CM800HB-50H
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CM800HB-50H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM800HB-50H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE
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CM800HB-50H
CM800HB-50H
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CM800HB-66H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM800HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules
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CM800HB-66H
012K/W
024K/W
CM800HB-66H
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SGCT
Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Text: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H
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CM800HA34H
CM1200HA-
CM1600HC-
CM1800HC34H
CM800HB50H
CM1200HD50H
CM800HB66H
CM1200HB66H
CM400HB-
CM600HB90H
SGCT
mitsubishi SGCT
scr gate driver ic 600 A
igbt types 6000v
MITSUBISHI GATE TURN-OFF THYRISTOR scr
GTO thyristor driver
m57962l
GTO thyristor 1200V 50A
SGCT 400A
NATIONAL IGBT
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PS51259-AP
Abstract: induction heating cooker IGBT MOTOR CONTROL RM250HA-10F induction cooker free circuit diagram rm30tna-h PS5 1020 CM400E4G-130H pwm INVERTER welder rm450ha-5h
Text: Power Devices General Catalog The search for state-of-the-art technology has landed on energy-savings and environmental protection. Mitsubishi Power Devices meets demands for energy-saving and eco-friendly semiconductors with advanced technology and a diversified product lineup. Industrial use,
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24P2Q
16pin
225mil
16P4X
300mil
PS51259-AP
induction heating cooker
IGBT MOTOR CONTROL
RM250HA-10F
induction cooker free circuit diagram
rm30tna-h
PS5 1020
CM400E4G-130H
pwm INVERTER welder
rm450ha-5h
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RM15TB-H
Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;
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CM400HA
CM600HA
CM600HB
CM100DY
CM150DY
CM200DY
CM300DY
CM400DY
CM600DY
RM15TB-H
RM10TB-H
RA45H8087M
rd00hhf1
rm30tn-h
RM10TB
RM250HB-10F
ps11023-a
PS11023
mitsubishi PS11023-A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-50H H°'Spa'# # c so^ HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules APPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
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CM800HB-50H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-66H somB HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules APPLICATIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM
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CM800HB-66H
20Vvj
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES F«l»SpssSSt"“*' CM800HB-66H n °mePa,a<,'eWC so^ HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules APPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
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CM800HB-66H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-66H U°mePa,a soW HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HB-66H • lc . • VCES .800A . 3300V .
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CM800HB-66H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-50H soW HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules A PPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAW ING & CIRCUIT DIAGRAM
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CM800HB-50H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-66H soW HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HB-66H 1C. .800A • VCES .
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CM800HB-66H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-50H U°mePa,a soW HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules A PPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
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CM800HB-50H
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nf 0036 diode
Abstract: Diode 15630 CM1000HA-28H cm50dy-28 CM1200HA-34H
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1400 VOLT HIGH PERFORMANCE H-SERIES IGBTMOD TRANSISTOR POWER MODULES Major Ratings and Characteristics at T c = 25 C (T j Maximum = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISICS
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CM300HA-28H
CM400HA-28H
CM600HA-28H
CM800HA-28H
CM1000HA-28H
nf 0036 diode
Diode 15630
cm50dy-28
CM1200HA-34H
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