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    45 S 28 Search Results

    45 S 28 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
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    45 S 28 Price and Stock

    RAF Electronic Hardware M2116-2545-S-28

    4.5MM HEX X 21MM X M2.5 THD
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    DigiKey M2116-2545-S-28 Bulk 1,136 1
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    DB Roberts M2116-2545-S-28
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    RAF Electronic Hardware M2107-2545-S-28

    4.5MM HEX X 12MM X M2.5 THD
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    DigiKey M2107-2545-S-28 Bulk 220 1
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    RS M2107-2545-S-28 Bulk 9 Weeks 896
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    RAF Electronic Hardware M2123-2545-S-28

    4.5MM HEX X 34MM X M2.5 THD
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    DigiKey M2123-2545-S-28 Bulk 1
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    Amphenol Industrial Operations 97-3102A-24-5S(288)

    RECEPT
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    DigiKey 97-3102A-24-5S(288) Bulk 25
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    Amphenol Industrial Operations 97-3106A-24-5S(288)

    PLUG
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    45 S 28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    45 M 7.5 B

    Abstract: UM-13 UM1-3
    Text: Filters Monolithic crystal filters Type 45 M 7.5 A 45 M 7.5 B 45 M 20 A 45 M 20 B 45 U 20 B 45 M 32 A 45 M 32 B 70 M 15 A 70 M 15 B 70 M 20 A 70 M 20 B 70 U 20 A 90 M 20 A 90 M 20 B 45 R 15 C 45 M 15 A 45 M 15 A9 45 R 15 A 45 S 15 A 45 M 15 B 45 R 15 B 45 S 15 B


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    PDF D-74924 45 M 7.5 B UM-13 UM1-3

    diode 400V 4A

    Abstract: isolators 415v star delta plc relay 5a 250v ac 30v dc plc scada and hmi DC MOTOR 12-24v delta hmi 2.2KW motor Auxillary transformer MC40-S-00
    Text: 3-pole contactors dimensions mm and weights (kg) Accessories 45 45 45 60 35 35 35 50 MRO7MBO9 MBI2 Depth: 49 Weight: 0.15 MC10-S MC14-S MC18-S MC22-S Depth: 65 Weight: 0.22 MC24-S MC32-S MC40-S Depth: 87 Weight: 0.4 MC50-S MC62-S MC74-S Depth: 96 Weight: 0.85


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    PDF MC10-S MC14-S MC18-S MC22-S MC24-S MC32-S MC40-S MC50-S MC62-S MC74-S diode 400V 4A isolators 415v star delta plc relay 5a 250v ac 30v dc plc scada and hmi DC MOTOR 12-24v delta hmi 2.2KW motor Auxillary transformer MC40-S-00

    ZD 103 ma

    Abstract: LT/SG3527A op292g AD8436
    Text: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004


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    PDF AD8534 SC705 OT-235 ST07377- ZD 103 ma LT/SG3527A op292g AD8436

    Nec K 872

    Abstract: nec k 813 NES2427P-45
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-45 45 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for WLL repeater and base station systems. It is capable of delivering 45 W of output power CW with high linear gain,


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    PDF NES2427P-45 NES2427P-45 Nec K 872 nec k 813

    D291S45T

    Abstract: Gleichrichter D921
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values


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    D291S45T

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values


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    D291S45T

    Abstract: t04 68 diode DIN 921 T-30007
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values


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    DIODE 921

    Abstract: D291S45T
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values


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    D291S45T

    Abstract: 1381
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 1381 S 45 T ø62,8 A C ±0,1 3,5 VWK July 1996 Schnelle Gleichrichterdiode Fast Diode D 1381 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values


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    ASI10644

    Abstract: TVU002 130 k 10
    Text: TVU002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVU002 is Designed for A 45° D FEATURES: • • • Omnigold Metalization System S B S G C D J E MAXIMUM RATINGS I F G IC 800 mA VCBO 45 V 25 V VCEO 4.0 V VEBO PDISS


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    PDF TVU002 TVU002 ASI10644 ASI10644 130 k 10

    ASI10643

    Abstract: TVU001
    Text: TVU001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVU001 is Designed for A 45° FEATURES: S B • • • Omnigold Metalization System D S G C D J I E MAXIMUM RATINGS F G IC 1.2 A VCBO 45 V 25 V VCEO 3.5 V VEBO PDISS


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    PDF TVU001 TVU001 ASI10643 ASI10643

    ASI10640

    Abstract: No abstract text available
    Text: TVU0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVU0.5 is Designed for A 45° FEATURES: • • • Omnigold Metalization System D S B S G C D J I E MAXIMUM RATINGS F IC 2.0 A VCBO 45 V H K 25 V VCEO 3.5 V VEBO PDISS


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    PDF ASI10640 ASI10640

    55-M12-A

    Abstract: 7472
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 56 S 40.45 D 56 U 40.45 15 5,5 SW27 M12 Type Circuit symbol Cathode Anode S Connection pin Case U Case Connection pin Ma 1-BE / 23 Jun 1993 Schnelle Gleichrichterdiode Fast Diode


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    TVR2D

    Abstract: SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
    Text: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (°C> (A) ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 50 j 45 45 45 45 45 50 j 50 j 50 j 50 j 50 j 45 45 45 45 100 503 50 j 50 j 50 j SR400FH-60 SR400FV-70 SR400FV— 80


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    PDF SR400FK-60 SR400FV-70 SR400FV-80 SRH25C SWH2-16 SWH2-25ED SKH-08 TVR2D SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20

    Untitled

    Abstract: No abstract text available
    Text: Series Index Bestellnummern Part Numbers Page/Seite M ini-SM P Mini-SMP 02K118-K00 . .45 02 K 118-500 . .45 02 S 118-K00. .45


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    PDF 02K118-K00 118-K00. 118-S00. 118-K00 08S118-S00. 203-3V2 203-3V4 203-3V6 20P-009

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Power Schottky Rectifier DSS 16 W = 16 A V RRM = 35 - 45 V TO-220 AC Preliminary data TO-263 S-Type Type RRM V 35 45 35 45 DSS 16-0035A(S) DSS 16-0045A(S) Symbol Test Conditions ^FRMS "^VJ ^FAV Tc = 152°C; rectangular, d = 0.5 ^FSM tp = 10m s Maximum Ratings (per diode)


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    PDF O-220 O-263 6-0035A 6-0045A

    IXTH24N45

    Abstract: No abstract text available
    Text: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient


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    PDF 0D003S5 IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 O-204 O-247 IXTH24N50, IXTM24N50,

    specifications of ic 1408

    Abstract: JT6M45-AS T6M45 QFP67-P-1420-0 kl3 59 pin diagram of IC 1408
    Text: TOSHIBA T6M45JT6M45-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6M45, JT6M45-AS T6M 45, JT6M 45-A S C M O S 1 CHIP LSI FOR LCD ELECTRO N IC C A LC U LA T O R The T6M 45, JT6M45-AS is a 1 chip microcomputer for 12digits 2-memory or 10-digits 2-memory electronic


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    PDF T6M45 JT6M45-AS T6M45, JT6M45-AS 12-digits 10-digits specifications of ic 1408 QFP67-P-1420-0 kl3 59 pin diagram of IC 1408

    BSC 031 N 06 NS 3

    Abstract: 21N50 ixth21n50 IXTM21N50
    Text: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450


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    PDF IXTH21N45 IXTH21N50 IXTM21N45 IXTM21N50 IXTH21N50, BSC 031 N 06 NS 3 21N50

    19n50

    Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
    Text: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)


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    PDF IXTH19N45 IXTH19N50 IXTM19N45 IXTM19N50 000035b 19n50 megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 LHi 978 megamos 13 H100

    Untitled

    Abstract: No abstract text available
    Text: eupec European PowerSem iconductor and Electronics Com pany Marketing information D 1381 S 45 T 062,8 VW K July 1996 S ch n elle G le ich rich te rd io d e Fast D iode Elektrische Eigenschaften Höchstzulässige Werte D 1381 S 45 T Electrical properties /


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    PDF

    IXTH26N50

    Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
    Text: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450


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    PDF IXTH26N45 IXTH26N50 IXTM26N45 IXTM26N50 Mbflb22b IXTH26N50, 00ESN0TINCLUOE TL 1074 CT

    Untitled

    Abstract: No abstract text available
    Text: W irew o und R esistors 4 KNH Type Dimension (mm) S e rie s KNH-5W KNH-10W KNH-15W KNH-20W KNH-30W KNH-40W KNH-50W KNH-60W KNH-80W KNH-100W A s 1.5 B*1.5 C± 3 11.0 11.0 15.5 19.0 19.0 19.0 28.0 28.0 28.0 28.0 30 45 45 50 75 90 75 90 115 140 16 16 17 19


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    PDF KNH-10W KNH-15W KNH-20W KNH-30W KNH-40W KNH-50W KNH-60W KNH-80W KNH-100W

    SO42

    Abstract: skn 220 semikron SKN 71 so 32 skn4508
    Text: s e MIKRDN Rectifier Diodes Ifrm s m axim um values for continuous operation IV r s m 80 A V rrm I 150 A SKN 45 SKN 70 SKN 71 IfaV (sin. 1 8 0 ; Tease = • ■ ■) V 5 0 A (1 1 8 °C ) 9 5 A (1 0 0 ° C ) 200 SKN 45/02 SKR 45/02 SKN 70/02 SKR 70/02 SKN 71/02 SKR 71/02*


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    PDF SO-32 D0-203 SO-29 DO-205 D0-205 D0-30 SO-42 SO42 skn 220 semikron SKN 71 so 32 skn4508