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    Phoenix Contact 1424100 (ALTERNATE: SAC-4P- 1,5-PUR/M12FRS PESH)

    Cable Assembly, Single Ended, M8 Female, 4 Conductor, 1.5m, M12 Power Series | Phoenix Contact 1424100
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    RS 1424100 (ALTERNATE: SAC-4P- 1,5-PUR/M12FRS PESH) Bulk 1
    • 1 $68.24
    • 10 $63.46
    • 100 $63.46
    • 1000 $63.46
    • 10000 $63.46
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    424100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIMM 30-pin

    Abstract: No abstract text available
    Text: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is a fast-page 4,194,304-word by 8-bit 30-Pin Leaded SIMM dynam ic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­


    OCR Scan     		PDF MC-424100A8 304-word uPD424100 30-Pin MC-424100A8 SIMM 30-pin

    nec 424100

    Abstract: 424100 nec v70 LA80 pd424100
    Text: N E C Electronics Inc. JIPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CMOS RAM Description Features .Erf W The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.


    OCR Scan     		PDF uPD424100 uPD424100A/L uPD42S4100A/L 424100-xx 424100-xxL 24100A-XX 42S4100A-xx 424100L-AXX 42S4100L-Axx pPD424100, nec 424100 424100 nec v70 LA80 pd424100

    nec 424100

    Abstract: No abstract text available
    Text: M ié W W NEC Electronics Inc. JLIPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CM O S RAM Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.


    OCR Scan     		PDF JLIPD424100, 24100A/L, 42S4100A/L 424100-xx 424100-xxL 24100A-XX 42S4100A-xx 424100L-AXX 42S4100L-Axx 1PD424100, nec 424100

    Untitled

    Abstract: No abstract text available
    Text: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module IH M li W NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is afast-p age 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single + 5-vo lt power supply. Advanced CMOS circuitry, includ­


    OCR Scan     		PDF MC-424100A9 MC-424100A9 304-word 30-Pin PD424100 83IH-6815B

    30-pin simm memory dynamic

    Abstract: No abstract text available
    Text: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is afast-page 4,194,304-word by 8-bit dynamic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­


    OCR Scan     		PDF MC-424100A8 304-word pPD424100 16-ms MC-424100A8 83IH-6815B 30-pin simm memory dynamic

    adret

    Abstract: 42S41 424100 CSR BLE m07b
    Text: £ Q E L E C T R O N I C S I N C b l E D • b 4 B V S 2 S 0 0 3 3 S 7 b DSG H N E C E NEC Electronics Inc. /JPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit D yn am ic C M O S R A M Description Features T \ l Md W T he devices listed below are fast-page dynam ic RAMs


    OCR Scan     		PDF uPD424100 uPD424100A/L uPD42S4100A/L 42S4100A/L b427SE5 fiPD424100, 4241OOA/L, adret 42S41 424100 CSR BLE m07b

    Untitled

    Abstract: No abstract text available
    Text: NEC Electronics Inc. MC-424000A9, -424100A 9 4,194,304 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C -424000A 9 and the MC-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o p e ra te from a single + 5 -v o lt power supply.


    OCR Scan     		PDF MC-424000A9, -424100A -424000A MC-424100A9 304-word 30-Pin /JPD424100 -424100A9

    424100A

    Abstract: No abstract text available
    Text: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is a fast-page 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single +5-volt power supply. Advanced CMOS circuitry, includ­


    OCR Scan     		PDF MC-424100A9 304-word fiPD424100 16-ms MC-424100A9 424100A

    MC-424000A9BA

    Abstract: C-424000A9BA simm 30-pin 9-bit MC-424000A9
    Text: jW X Y * t i M2à W NEC Electronics Inc. Description The M C-424000A9 and the M C-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o perate from a single + 5 -v o lt power supply. Advanced CM OS circuitry, including a single-transistor


    OCR Scan     		PDF MC-424000A9, -424100A9 MC-424000A9 C-424100A9 304-word PD424100 dur005 30-Pin MC-424000A9BA) C-424000A9BA MC-424000A9BA C-424000A9BA simm 30-pin 9-bit

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    MN12261

    Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
    Text: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating


    OCR Scan     		PDF N1224 16-DIP 18-DIP SO-18D 14-DlP MN12261 MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram

    A/M29F010B(45/70/90/MT352/CG/sigma asc 333

    Abstract: No abstract text available
    Text: L IÆ j W NEC Electronics Inc. HIPD424100, 4241OOA/L, 42S41OOA/L 4,194,304 x 1-Bit Dynamic CMOS RAM October 1992 Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.


    OCR Scan     		PDF HIPD424100, 4241OOA/L, 42S41OOA/L 424100-xx 424100-xxL 24100A-XX 42S4100A-xx 424100L-Axx 42S4100L-Axx A/M29F010B(45/70/90/MT352/CG/sigma asc 333

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    N42C

    Abstract: N41C MN41256a N41257A-08 N4146 4141-00 41410 TSOP044-P0400A N4141
    Text: MOS Memories • Dynamic RAMs Memory Size Type No. bit Memory A ccess C ycle Refresh Supply C om position Tim e Tim e C ycle Voltage (W ord X bit) max. (ns) min. (ns) (cycle/m s) (V) O perating S tand-by 262,144 X 1 80 160 256/4ms 4.5 ~ 5.5 440 16.5 DIPOI 6-P-0300A


    OCR Scan     		PDF N41256A 1256A N41257A-08 256/4ms 6-P-0300A QFJ018-P-R290 ZIP016-P-0300 DIP016-P-0300A N42C N41C MN41256a N4146 4141-00 41410 TSOP044-P0400A N4141