Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Mechanical Mating Force: 40kgf max. Unmating Force: 4.4kgf min. Durability: 30 Cycles Board to Board Connector QT01 Series 0.5mm Pitch For High Speed Application Mated w ith QT00 Series Electrical Current Rating: 0.5A max.per contact Contact Resistance: 55mΩ max. Initial , 75mΩ max.(After)
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40kgf
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Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Mechanical Mating Force: 40kgf max. Unmating Force: 4.4kgf min. Durability: 30 Cycles Board to Board Connector QT00 Series 0.5mm Pitch For High Speed Application Mated w ith QT01 Series Electrical Current Rating: 0.5A max.per contact Contact Resistance: 55mΩ max. Initial , 75mΩ max.(After)
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40kgf
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PRT12-4DO
Abstract: PRT12-2DO PRT18-8DO PRT12-4DC PSNT17-5DO PSNT17-5DC PRCMT12-2DO-I PRCMT18-5DO PRT08-2DO PRT08-2DC
Text: INDUCTIVE PROXIMITY SENSOR DC 2WIRE TYPE U A L Thank you very much for selecting Autonics products. For your safety, please read the following before using. ▣ Caution for your safety ※Please keep these instructions and review them before using this unit.
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EP-KE-07-0430C
PRT12-4DO
PRT12-2DO
PRT18-8DO
PRT12-4DC
PSNT17-5DO
PSNT17-5DC
PRCMT12-2DO-I
PRCMT18-5DO
PRT08-2DO
PRT08-2DC
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3040-N
Abstract: No abstract text available
Text: ◆外形寸法図 ●単相・三相両用 155±2 140±1 120±2 8x6 25±1 65±2 （ダ円孔） アース線導入孔 φ7 30±3 配線導入孔 φ10 8×6 内部接続 （ダ円孔） 単相接続 三相接続 重力方向 C±5 銘板 点線部は取付足を
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225mm
m3040kgf
220VAC
50/60Hz
WNA-E22150K
WNA-E22200K
WNA-E22250K
WNA-E22300K
WNA-E22400K
WNA-E22500K
3040-N
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1000kVAr
Abstract: 3040-N WNLA-E2500K WNLA-E2300K WNLA-E2200K WNLA-E2250K
Text: ◆外形寸法図 ●単相・三相両用 155±2 140±1 120±2 ●三相用 点線部は取付足を 据置使用した場合 PL NP 銘板 トルク表示 取付足 （取外し可能） 40±1 端子カバー （取外し可能） アース端子 PL NP
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3-M10
2-M10
225mm
3040kgf
240mm
m160200kgf
m125kgf
200VAC
50/60HzJIS
WNLA-E2150K
1000kVAr
3040-N
WNLA-E2500K
WNLA-E2300K
WNLA-E2200K
WNLA-E2250K
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Untitled
Abstract: No abstract text available
Text: 1 取付間隔について コンデンサの取付間隔は放熱や保安装置の動作を考慮して決められてます。 並列使用時の標準取付間隔はケース奥行寸法（b 寸法）毎に次の通りにしてください。 ●ブリキ（黄銅）ケース
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6570mm
75130mm
150mm
2940kgfcm
25kgfcm
4055kgfcm
35kgfcm
85100kgfcm
65kgfcm
160200kgfcm
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gfg 11 a
Abstract: capacitive touch screen TOUCH GLASS SCREEN AMT 4-Wire Resistive Touch Screen
Text: AMT News Express TOUCH TOTAL SOLUTIONS Bulletin No.：AMTNE0909 2009/ 03/11 AMT Launches GFG Touch Screen Standard Parts AMT's new touch product, the Glass-Film-Glass GFG touch screen has a thin glass as its top surface, making it scratch proof, an advantage over the conventional type of film-glass touch
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AMTNE0909
gfg 11 a
capacitive touch screen
TOUCH GLASS SCREEN
AMT 4-Wire Resistive Touch Screen
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COAXIAL CABLE 5D-2V
Abstract: No abstract text available
Text: N Style Coaxial Connector N Series FEATURE Characteristic Impedance ・ N series is a thread coupling coaxial connector which is the most popular as a 7mm type 50 Ω 50 Ω impedance. ・ N series is available for various cable type. Frequency Range ・ It is incompatible to NC series 75 Ω impedance N
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JIS-C5411
MIL-PRF-39012
500VAC
COAXIAL CABLE 5D-2V
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2MBI300LB-060
Abstract: 600V 300A igbt dc to dc power supply 2MBI300LB060
Text: 2MBI300LB-060 300A IGBT Module 600V / 300A 2 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance
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2MBI300LB-060
2MBI300LB-060
600V 300A igbt dc to dc power supply
2MBI300LB060
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1MBI600LN-060
Abstract: M122 1MBI600LN060 IGBT 600V 600A
Text: 1MBI600LN-060 600A IGBT Module 600V / 600A 1 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 低ｲﾝﾀﾞｸﾀﾝｽﾓｼﾞｭｰﾙ構造 Low Inductance Module Structure
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1MBI600LN-060
35kgf
1MBI600LN-060
M122
1MBI600LN060
IGBT 600V 600A
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MGG14C
Abstract: Yamatake MGG14C MGG18D magnew 3000 plus Yamatake MagneW MGG14C magnew Yamatake Flow MGA12w c yamatake magnew 3000 parts MGA12W
Text: No. SS2-MGG200-0110 Rev.1 Specification MagneW 3000 PLUS Smart Electromagnetic Flowmeter Model MGG18D Detector (Ceramic lining) OVERVIEW The MagneW 3000 PLUS ceramic lining detector is a high-performance and highly-reliable flow meter based on Yamatake's proven MagneW 3000 flow
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SS2-MGG200-0110
MGG18D
100mm
MGG14C
Yamatake MGG14C
MGG18D
magnew 3000 plus
Yamatake MagneW MGG14C
magnew
Yamatake Flow
MGA12w c
yamatake magnew 3000 parts
MGA12W
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Untitled
Abstract: No abstract text available
Text: 1 F I 2 5 B - 6 2 5 0 a S ± / \ , 7 - iE $ ? a - ;U FAST RECO VERY DIODE MODULE : Features • ¡&[sliS.H$f14 A’i'i3i-' • Short Reverse Recovery Time Variety of Connection Menu •mmwt insulated Type ’ Applications Arc-Welders • 7 y —sJW —
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50/60Hz
I95t/R89)
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m210 g
Abstract: J3E diode
Text: 2DI100Z-100 iooa : Outline Drawings POWER TRAN SISTO R MODULE ÌR 25 F e a tu re s • S W JÏ High Voltage • 7 'J — jfr-f y — KrtflK • A S O A 'J ÏIl' • ÿfeiiïïi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • Æ liÉ ^ A p p lic a t io n s
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2DI100Z-100
E82988
11S19^
I95t/R89)
m210 g
J3E diode
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 M B I 6 0 0 L P - 0 6 0 6 o o a IGBT IG BT M O D U L E •<NJt : Features • "J + 's V • JB E K High Speed Switching Voltage Drive Low Inductance Module Structure : Applications •i > '< — 9 • A C , D C if — # 7 > ~f Inverter for Motor Drive
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l95t/R89
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE SF150AA20 UL;E76102 M is an isolated MOSFET module designed for fast switching applications of low voltage/high current. SF1 5 0 A A 2 0 enable you to control high power with compact package. SF1 5 0 A A 2 0 • I ,= 150A. V;s = 200V • Compact Package
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SF150AA20
E76102
100m200m
QDD224A
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Untitled
Abstract: No abstract text available
Text: M O SFET MODULE FBA50BA45/50 ULiE76102 M FB A50B A is a dual power M OSFET module designed for switching applications of high voltage and current. (2 devices Separated.) The mounting base of the module is electrical, lated from semiconductor elements for simple heatsiplrc^nsg
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FBA50BA45/50
ULiE76102
450/500V
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE SF150AA50 UL;E76102 M SF1 5 0 A A 5 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 1 5 0 A A 5 0 enable you to control high power with compact p a c k a g e .^ ^ 150A, VDSS= 500V Compact Package
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SF150AA50
E76102
112M3
Q00B24B
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ETN36-O3O
Abstract: No abstract text available
Text: ETN36-O3O 300a : O u tlin e D r a w in g s POWER TRANSISTOR MODULE • i f * : Features • High Current • hFE High DC Current Gain • Non Insulated Type : Applications High Power S w itching • U ninterruptible Power Supply • DC DC M o to r Controls
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ETN36-O3O
l95t/R89
Shl50
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PDF
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NI00
Abstract: ni001 1MBI400L-060 Ka 2535
Text: 1 MBI400L-060 4 ooa l IG B T ^ n .- ;u £ f : Outline Drawings IGBT MODULE : Features • "jT 'y 'f High Speed Switching • IftflSWB/E Low Saturation Voltage • S A ^ y — hifti/tiMOS^ — hflliS) High Input Impedance • ^'> 3 . — y M o d u l e Packaging
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B1400L-060
NI00
ni001
1MBI400L-060
Ka 2535
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PDF
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DIODE B36
Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
Text: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —
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ETN85-O5O
E82988
19S24^
095t/R89
DIODE B36
ml25
M104
T151
Transistor B36
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DIODE 1000 A
Abstract: 1MBI300L-060 M116 MBI30 RD300
Text: 1 IG M B B T ^ 3 I zl- ; L - 6 S ^ V 'o . — \/ POWER MODULE 300A) : Outline Drawings p IGBT MODULE * Features • ¡i& X - f v + ' s ' f High Speed Switching • Low Saturation Voltage • • hSitCM O S-y'— htttifi) High Input Impedance Module Packaging
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1MBI300L-060
DIODE 1000 A
M116
MBI30
RD300
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transistor 009
Abstract: diode B61 transistor bf 760 S535 M109 T810 T930
Text: 1 D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • F e a tu re s • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p lic a t io n s • ’X M .t) 7*4 "/•?■>?
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11S19
l95t/R89
transistor 009
diode B61
transistor bf 760
S535
M109
T810
T930
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PDF
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Untitled
Abstract: No abstract text available
Text: ETN31-O55C200A / n° O utline D raw ing s 7 - POWER TRANSISTOR MODULE • ^ J I : i Features • High Current • h F E ^ g j^ High DC Current Gain Non Insulated Type : Applications • Js.WtJX'i " j 3? High Power Switching • U ninterruptible Power Supply
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ETN31-O55C200A)
I95t/R89)
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PDF
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B246
Abstract: T760 B245
Text: 1 D I 2 O O Z - 1 O /< 7 - O 2 0 0 a /\ 0|7 — : Outline Drawings ;u PO W ER T R A N S IS T O R M O D U LE ^Features '¡È5IJJŒ High V o ltag e • 7 l) — & ' { *J > Ï 9* <4 ^ — K l*3/8c 'A S O In clu d in g Fre e W h e e lin g D iod e E x ce lle n t S a fe O p e ratin g A rea
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OTI30
I95t/R89)
Shl50
B246
T760
B245
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PDF
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